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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS.
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- Journal of Structural Chemistry, 2021, v. 62, n. 4, p. 630, doi. 10.1134/S0022476621040156
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- Article
Modification of the Ratio between sp<sup>2</sup>- to sp<sup>3</sup>-Hybridized Carbon Components in PECVD Diamond-Like Films.
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- Semiconductors, 2020, v. 54, n. 9, p. 1047, doi. 10.1134/S1063782620090316
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Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates.
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- Semiconductors, 2020, v. 54, n. 9, p. 1147, doi. 10.1134/S1063782620090080
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- Article
The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 551, doi. 10.1134/S1063785020060024
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- Article
SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States.
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 290, doi. 10.1134/S1063785020030190
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- Article
Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers.
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- Technical Physics, 2019, v. 64, n. 12, p. 1827, doi. 10.1134/S1063784219120041
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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials.
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- Technical Physics Letters, 2019, v. 45, n. 1, p. 48, doi. 10.1134/S1063785019010231
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- Article
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
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- Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X
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- Article
Study of the Structural and Morphological Properties of HPHT Diamond Substrates.
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- Semiconductors, 2018, v. 52, n. 11, p. 1432, doi. 10.1134/S1063782618110271
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- Article
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.
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- Semiconductors, 2018, v. 52, n. 11, p. 1491, doi. 10.1134/S1063782618110088
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- Article
Grazing Incidence X-Ray Diffraction Study of Tantalum Thin Films.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 4, p. 701, doi. 10.1134/S1027451018040183
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- Article
New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry.
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- Technical Physics Letters, 2018, v. 44, n. 4, p. 297, doi. 10.1134/S106378501804003X
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- Article
A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam.
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- Technical Physics Letters, 2018, v. 44, n. 4, p. 320, doi. 10.1134/S1063785018040181
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- Article
Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry.
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- Semiconductors, 2013, v. 47, n. 12, p. 1556, doi. 10.1134/S1063782613120221
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The use of crystallography for the studies of semiconductor materials.
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- Journal of Structural Chemistry, 2012, v. 53, n. 1, p. 35, doi. 10.1134/S0022476612070050
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- Article
Deposition of YBCO films on both sides of substrate by magnetron sputtering.
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- Technical Physics Letters, 2010, v. 36, n. 9, p. 859, doi. 10.1134/S1063785010090245
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Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers.
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- Semiconductors, 2010, v. 44, n. 4, p. 519, doi. 10.1134/S1063782610040196
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- Article
Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.
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- Semiconductors, 2010, v. 44, n. 3, p. 401, doi. 10.1134/S106378261003022X
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- Article
Anisotropic piezoeffect in microelectromechanical systems based on epitaxial Al<sub>0.5</sub>Ga<sub>0.5</sub>As/AlAs heterostructures.
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- Technical Physics, 2009, v. 54, n. 10, p. 1476, doi. 10.1134/S1063784209100119
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- Article
Optically active centers in Si/Si<sub>1 − x</sub>Ge<sub> x</sub>:Er heterostructures containing Er<sup>3+</sup> ions.
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- Semiconductors, 2009, v. 43, n. 7, p. 877, doi. 10.1134/S1063782609070094
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Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
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- Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
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Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride.
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- JETP Letters, 2009, v. 89, n. 2, p. 73, doi. 10.1134/S0021364009020052
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- Article
Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.
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- Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105
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- Article
Magnetron sputtering of YBaCuO target: Effects of discharge voltage and deposition rate variation.
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- Technical Physics, 2009, v. 54, n. 1, p. 124, doi. 10.1134/S1063784209010186
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Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.
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- Semiconductors, 2008, v. 42, n. 3, p. 286, doi. 10.1134/S1063782608030081
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Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.
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- Semiconductors, 2008, v. 42, n. 3, p. 298, doi. 10.1134/S106378260803010X
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- Article
Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers.
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- Semiconductors, 2007, v. 41, n. 11, p. 1356, doi. 10.1134/S1063782607110152
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- Article
MOVPE of structures with aluminum nanocluster layers in a GaAs matrix.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 444, doi. 10.1134/S1063785007050252
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- Article
Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 167, doi. 10.1134/S1063782607020108
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- Article
Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si<sub>1− x </sub>Ge<sub>x</sub> layer.
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- Semiconductors, 2006, v. 40, n. 3, p. 338, doi. 10.1134/S1063782606030158
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- Article
Special features of the formation of Ge(Si) islands on the relaxed Si<sub>1−x</sub>Ge<sub>x</sub>/Si(001) buffer layers.
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- Semiconductors, 2006, v. 40, n. 2, p. 229, doi. 10.1134/S1063782606020217
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- Article
The Special Features of the Hall Effect in GaMnSb Layers Deposited from a Laser Plasma.
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- Journal of Experimental & Theoretical Physics, 2005, v. 100, n. 4, p. 742, doi. 10.1134/1.1926435
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A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix.
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- Semiconductors, 2005, v. 39, n. 1, p. 82, doi. 10.1134/1.1852651
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- Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
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- Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
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Erbium and Germanium Profiles in Si<sub>1 – x</sub>Ge<sub>x</sub> Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH<sub>4</sub>.
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- Inorganic Materials, 2003, v. 39, n. 1, p. 3, doi. 10.1023/A:1021822715712
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- Article
Elastic Stress Relaxation in Buffer Layers Based on Porous Strained InGaAs/GaAs Superlattices.
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- Technical Physics Letters, 2002, v. 28, n. 12, p. 1018, doi. 10.1134/1.1535489
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- Article
Low-Energy Photoluminescence of Structures with GeSi/Si(001) Self-Assembled Nanoislands.
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- JETP Letters, 2002, v. 76, n. 6, p. 365, doi. 10.1134/1.1525038
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- Article
Luminescent Si–Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 6, p. 625, doi. 10.1134/1.1485659
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- Article
A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling.
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- Technical Physics Letters, 2001, v. 27, n. 10, p. 868, doi. 10.1134/1.1414559
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- Article
Special Features in the Synthesis and Properties of Thin Y–Ba–Cu–O High-Temperature Superconductor Films Free of Secondary Phases.
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- Technical Physics Letters, 2001, v. 27, n. 3, p. 197, doi. 10.1134/1.1359824
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Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons.
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- Technical Physics Letters, 2001, v. 27, n. 2, p. 114, doi. 10.1134/1.1352765
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- Article
Porous Gallium Arsenide with Arsenic Clusters.
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- Technical Physics, 2000, v. 45, n. 5, p. 650, doi. 10.1134/1.1259695
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- Article
Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates.
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- Technical Physics Letters, 2000, v. 26, n. 4, p. 298, doi. 10.1134/1.1262823
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- Article
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001).
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- Semiconductors, 2000, v. 34, n. 1, p. 6, doi. 10.1134/1.1187942
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- Article
Influence of working gas pressure on the properties of thin films of high-temperature superconductors obtained by magnetron sputtering.
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- Technical Physics Letters, 1998, v. 24, n. 2, p. 159
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- Article
Influence of low-temperature annealing on the properties of Y[sub 1]Ba[sub 2]Cu[sub 3]O[sub 7-δ] thin films.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 24, doi. 10.1134/1.1261978
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- Article
Structure and transport properties of ultrathin YBa2Cu3O7-x films.
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- JETP Letters, 1996, v. 63, n. 8, p. 644, doi. 10.1134/1.567081
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- Article