Found: 776
Select item for more details and to access through your institution.
A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons.
- Published in:
- Journal of Structural Chemistry, 2010, v. 51, p. 145, doi. 10.1007/s10947-010-0204-y
- By:
- Publication type:
- Article
Diffusion Processes in Semiconductor Structures During Microwave Annealing.
- Published in:
- Radiophysics & Quantum Electronics, 2003, v. 46, n. 8/9, p. 749, doi. 10.1023/B:RAQE.0000025008.97954.1c
- By:
- Publication type:
- Article
Plasmaenhanced chemical vapor deposition of 99.95 28Si in form of nano and polycrystals using silicon tetrafluoride precursor.
- Published in:
- Crystal Research & Technology, 2010, v. 45, n. 9, p. 983
- By:
- Publication type:
- Article
PECVD growth of crystalline silicon from its tetrafluoride.
- Published in:
- Crystal Research & Technology, 2010, v. 45, n. 9, p. 899, doi. 10.1002/crat.201000090
- By:
- Publication type:
- Article
Modification of the Ratio between sp<sup>2</sup>- to sp<sup>3</sup>-Hybridized Carbon Components in PECVD Diamond-Like Films.
- Published in:
- Semiconductors, 2020, v. 54, n. 9, p. 1047, doi. 10.1134/S1063782620090316
- By:
- Publication type:
- Article
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075
- By:
- Publication type:
- Article
SiN layers for the in-situ passivation of GaN-based HEMT structures.
- Published in:
- Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251
- By:
- Publication type:
- Article
Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates.
- Published in:
- Semiconductors, 2015, v. 49, n. 1, p. 19, doi. 10.1134/S1063782615010066
- By:
- Publication type:
- Article
Quantitative calibration and germanium SIMS depth profiling in GeSi/Si heterostructures.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1109, doi. 10.1134/S1063782614080090
- By:
- Publication type:
- Article
Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1556, doi. 10.1134/S1063782613120221
- By:
- Publication type:
- Article
MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics.
- Published in:
- Semiconductors, 2013, v. 47, n. 1, p. 158, doi. 10.1134/S1063782612120032
- By:
- Publication type:
- Article
Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1481, doi. 10.1134/S1063782612120238
- By:
- Publication type:
- Article
Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1493, doi. 10.1134/S106378261212024X
- By:
- Publication type:
- Article
Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots.
- Published in:
- Semiconductors, 2012, v. 46, n. 11, p. 1415, doi. 10.1134/S1063782612110048
- By:
- Publication type:
- Article
Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry.
- Published in:
- Semiconductors, 2012, v. 46, n. 11, p. 1392, doi. 10.1134/S1063782612110061
- By:
- Publication type:
- Article
Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.
- Published in:
- Semiconductors, 2010, v. 44, n. 3, p. 401, doi. 10.1134/S106378261003022X
- By:
- Publication type:
- Article
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
- Published in:
- Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
- By:
- Publication type:
- Article
Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.
- Published in:
- Semiconductors, 2008, v. 42, n. 3, p. 298, doi. 10.1134/S106378260803010X
- By:
- Publication type:
- Article
The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 99, doi. 10.1134/S1063782608010144
- By:
- Publication type:
- Article
Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 449, doi. 10.1134/S1063782606040142
- By:
- Publication type:
- Article
Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy.
- Published in:
- Semiconductors, 2005, v. 39, n. 1, p. 11, doi. 10.1134/1.1852634
- By:
- Publication type:
- Article
Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers.
- Published in:
- Semiconductors, 2005, v. 39, n. 1, p. 1, doi. 10.1134/1.1852631
- By:
- Publication type:
- Article
Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor.
- Published in:
- Semiconductors, 2005, v. 39, n. 1, p. 14, doi. 10.1134/1.1852635
- By:
- Publication type:
- Article
Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films.
- Published in:
- Semiconductors, 2005, v. 39, n. 1, p. 8, doi. 10.1134/1.1852633
- By:
- Publication type:
- Article
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix.
- Published in:
- Semiconductors, 2005, v. 39, n. 1, p. 82, doi. 10.1134/1.1852651
- By:
- Publication type:
- Article
Changes in the Composition of Celomic Fluid Metabolites of the Black Sea Urchin Mesocentrotus nudus (Echinoidea) and the Starfish Asterina pectinifera (Asteroidea) under Conditions of Hypoxia Stress.
- Published in:
- Biology Bulletin, 2021, v. 48, n. 4, p. 407, doi. 10.1134/S1062359021040075
- By:
- Publication type:
- Article
Anaerobic glycolysis in sea urchins as adaptation to life in a habitat lacking oxygen.
- Published in:
- Biology Bulletin, 2016, v. 43, n. 6, p. 517, doi. 10.1134/S1062359016060066
- By:
- Publication type:
- Article
Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers.
- Published in:
- Surface & Interface Analysis: SIA, 2017, v. 49, n. 2, p. 117, doi. 10.1002/sia.6068
- By:
- Publication type:
- Article
A new approach to express ToF SIMS depth profiling.
- Published in:
- Surface & Interface Analysis: SIA, 2015, v. 47, n. 7, p. 771, doi. 10.1002/sia.5773
- By:
- Publication type:
- Article
Experimental shift allowance in the deconvolution of SIMS depth profiles.
- Published in:
- Surface & Interface Analysis: SIA, 2013, v. 45, n. 8, p. 1228, doi. 10.1002/sia.5259
- By:
- Publication type:
- Article
Polymorphism in chalcogenides of alkaline-earth metals.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 115
- By:
- Publication type:
- Article
A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 10, p. 868, doi. 10.1134/1.1414559
- By:
- Publication type:
- Article
Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 2, p. 114, doi. 10.1134/1.1352765
- By:
- Publication type:
- Article
Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates.
- Published in:
- Technical Physics Letters, 2000, v. 26, n. 4, p. 298, doi. 10.1134/1.1262823
- By:
- Publication type:
- Article
Influence of screening on calculations on the total energy of calcium oxide.
- Published in:
- Technical Physics Letters, 1999, v. 25, n. 4, p. 278, doi. 10.1134/1.1262451
- By:
- Publication type:
- Article
Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers.
- Published in:
- Technical Physics, 2019, v. 64, n. 12, p. 1827, doi. 10.1134/S1063784219120041
- By:
- Publication type:
- Article
Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time.
- Published in:
- Technical Physics, 2014, v. 59, n. 3, p. 402, doi. 10.1134/S1063784214030293
- By:
- Publication type:
- Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
- By:
- Publication type:
- Article
Composition and structural perfection of (A,Mn)B and MnB (A = Ga, In; B = Sb, As, P) nanolayers.
- Published in:
- Inorganic Materials, 2012, v. 48, n. 6, p. 553, doi. 10.1134/S0020168512050044
- By:
- Publication type:
- Article
The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 6, p. 551, doi. 10.1134/S1063785020060024
- By:
- Publication type:
- Article
SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 3, p. 290, doi. 10.1134/S1063785020030190
- By:
- Publication type:
- Article
A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials.
- Published in:
- Technical Physics Letters, 2019, v. 45, n. 1, p. 48, doi. 10.1134/S1063785019010231
- By:
- Publication type:
- Article
A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 4, p. 320, doi. 10.1134/S1063785018040181
- By:
- Publication type:
- Article
New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 4, p. 297, doi. 10.1134/S106378501804003X
- By:
- Publication type:
- Article
Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 5, p. 477, doi. 10.1134/S1063785017050170
- By:
- Publication type:
- Article
Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 8, p. 783, doi. 10.1134/S106378501608006X
- By:
- Publication type:
- Article
Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 3, p. 243, doi. 10.1134/S1063785016030044
- By:
- Publication type:
- Article
Single-crystal GaN/AlN layers on CVD diamond.
- Published in:
- Technical Physics Letters, 2015, v. 41, n. 10, p. 954, doi. 10.1134/S1063785015100065
- By:
- Publication type:
- Article
High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation.
- Published in:
- Technical Physics Letters, 2015, v. 41, n. 3, p. 266, doi. 10.1134/S1063785015030189
- By:
- Publication type:
- Article
A new approach to the diagnostics of nanoislands in GeSi/Si heterostructures by secondary ion mass spectrometry.
- Published in:
- Technical Physics Letters, 2014, v. 40, n. 7, p. 601, doi. 10.1134/S1063785014070190
- By:
- Publication type:
- Article