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Radiative recombination in BiI3(Mn) and BiI3(Cr) layered single crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 380
By:
- Motsnyi, F. V.;
- Dorogan, V. G.
Publication type:
Article
Analysis of exciton reflection spectrum of 2H-... layered single crystals with atomically clean surface.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 346, doi. 10.15407/spqeo6.03.346
By:
- Dorogan, V. G.;
- Zhydkov, V. 0.;
- Motsnyi, F. V.;
- Smolanka, 0. M.
Publication type:
Article
Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.
Published in:
Nanoscale Research Letters, 2010, v. 5, n. 6, p. 991, doi. 10.1007/s11671-010-9590-5
By:
- Mazur, Yu. I.;
- Dorogan, V. G.;
- Marega, Jr., E.;
- Cesar, D. F.;
- Lopez-Richard, V.;
- Marques, G. E.;
- Zhuchenko, Z. Ya.;
- Tarasov, G. G.;
- Salamo, G. J.
Publication type:
Article
Spectroscopic studies of 2H-PbI2(Mn) layered crystals.
Published in:
Physica Status Solidi (B), 2005, v. 242, n. 12, p. 2427, doi. 10.1002/pssb.200540086
By:
- Motsnyi, F. V.;
- Dorogan, V. G.;
- Kovalyuk, Z. D.;
- Okulov, S. M.;
- Yaremko, A. M.
Publication type:
Article
1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C.
Published in:
Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 20, p. 1467, doi. 10.1049/el.2014.2414
By:
- Chen, S. M.;
- Tang, M. C.;
- Wu, J.;
- Jiang, Q.;
- Dorogan, V. G.;
- Benamara, M.;
- Mazur, Y. I.;
- Salamo, G. J.;
- Seeds, A. J.;
- Liu, H.
Publication type:
Article

Found: 5

Radiative recombination in BiI<sub>3</sub>(Mn) and BiI<sub>3</sub>(Cr) layered single crystals.

Analysis of exciton reflection spectrum of 2H-... layered single crystals with atomically clean surface.

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.

Spectroscopic studies of 2H-PbI<sub>2</sub>(Mn) layered crystals.

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C.