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Atomic and electronic structure of the surface of porous silicon layers.
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- Russian Journal of General Chemistry, 2010, v. 80, n. 6, p. 1128, doi. 10.1134/S1070363210060150
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- Article
Morphology of tin oxide nanocrystals grown by vapor-phase transport method.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 541, doi. 10.1134/S1063785010060167
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Preparation of porous silicon nanocomposites with iron and cobalt and investigation of their electron structure by X-ray spectroscopy techniques.
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- Technical Physics Letters, 2009, v. 35, n. 9, p. 827, doi. 10.1134/S1063785009090120
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- Article
Optical properties of SnO<sub>2− x </sub> nanolayers.
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- Technical Physics Letters, 2006, v. 32, n. 9, p. 782, doi. 10.1134/S1063785006090148
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- Article
Interference phenomena of synchrotron radiation in TEY spectra for silicon-on-insulator structure.
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- Journal of Synchrotron Radiation, 2012, v. 19, n. 4, p. 609, doi. 10.1107/S0909049512022844
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- Article
Photoluminescence Properties of Nanoporous Nanocrystalline Carbonate-Substituted Hydroxyapatite.
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- Optics & Spectroscopy, 2018, v. 124, n. 2, p. 187, doi. 10.1134/S0030400X18020066
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- Article
Low-Energy Oscillations in the E[sub 0] Photoreflectance Spectra of Homoepitaxial n-GaAs/n[sup +]-GaAs Samples with n = 10[sup 15]–10[sup 16]cm[sup –3] and n[sup +]approx. 10[sup 18]cm[sup –3].
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- Optics & Spectroscopy, 2000, v. 89, n. 4, p. 549, doi. 10.1134/1.1319915
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- Article
ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 215, doi. 10.1142/S0219581X07004468
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Combined Photoreflectance/Photoluminescence Studies of the Stability of Semiconductor Surface Passivation.
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- Technical Physics, 2002, v. 47, n. 2, p. 224, doi. 10.1134/1.1451971
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- Article
Band structure and density of states in SiP<sub>2</sub>.
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- Physica Status Solidi (B), 1975, v. 72, n. 2, p. 661, doi. 10.1002/pssb.2220720224
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- Article
Influence of the Crystal Structure of the Nucleus on the Morphology of t-ZnO Tetrapods.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 212, doi. 10.1134/S1063774519020032
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- Article
Theoretical X-ray Emission Study of High- T<sub>c</sub> Superconductor YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> Thin Films.
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- Physica Status Solidi (B), 1994, v. 185, n. 1, p. 179, doi. 10.1002/pssb.2221850114
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- Article
Density of States and Photoconductivity of Hydrogenated Amorphous Silicon.
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- Physica Status Solidi (B), 1986, v. 138, n. 2, p. 647, doi. 10.1002/pssb.2221380229
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- Article
Integration over the Two-Dimensional Brillouin Zone.
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- Physica Status Solidi (B), 1985, v. 129, n. 1, p. 293, doi. 10.1002/pssb.2221290129
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- Article
Local-Density-Functional Approximation to the Energy Band Structure of TmS Using the Self-Consistent Relativistic Linearized-Augmented-Planc-Wave Method.
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- Physica Status Solidi (B), 1984, v. 121, n. 1, p. 241, doi. 10.1002/pssb.2221210126
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- Article
Role of Noble Metal d-States in the Formation of the Electron Structure of Ternary Sulphides.
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- Physica Status Solidi (B), 1981, v. 106, n. 2, p. 429, doi. 10.1002/pssb.2221060202
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d-s, p Resonance and Electronic Structure of Compounds, Alloys, and Solid Solutions.
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- Physica Status Solidi (B), 1981, v. 105, n. 1, p. 121, doi. 10.1002/pssb.2221050113
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- Article
Problems of the OPW Method. II. Calculation of the Band Structure of ZnS and CdS.
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- Physica Status Solidi (B), 1980, v. 97, n. 2, p. 631, doi. 10.1002/pssb.2220970230
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Problems of the OPW method. I. Transition metals.
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- Physica Status Solidi (B), 1979, v. 94, n. 1, p. 51, doi. 10.1002/pssb.2220940105
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- Article
Effect of Aluminum on the Structure and Electrical Properties of Amorphous Diamond-Like Silicon-Carbon Films.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 6, p. 1199, doi. 10.1134/S1027451023060174
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- Article
Synchrotron investigation of the multilayer nanoperiodical Al<sub>2</sub>O<sub>3</sub>/SiO/Al<sub>2</sub>O<sub>3</sub>/SiO...Si structure formation Synchrotron investigation of the multilayer nanoperiodical Al<sub>2</sub>O<sub>3</sub>/SiO/Al<sub>2</sub>O<sub>3</sub>/SiO...Si structure formation
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 8, p. 1182, doi. 10.1002/sia.4868
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Synchrotron study of the formation of nanoclusters in Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/…/Si(100) multilayer nanostructures.
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- Semiconductors, 2013, v. 47, n. 10, p. 1316, doi. 10.1134/S106378261310028X
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- Article
Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
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- Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
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The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089
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Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
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- Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
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- Article
Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
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The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 8, p. 1098, doi. 10.1134/S1063782609080247
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- Article
Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.
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- Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108
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Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga<sub> x </sub>In<sub>1 − x </sub>As<sub> y </sub>P<sub>1 − y </sub>/GaInP/GaAs(001) heterostructures.
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- Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121
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- Article
A Study of the Local Electronic and Atomic Structure in a-Si<sub>x</sub>C<sub>1 – </sub><sub>x</sub> Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.
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- Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643
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- Article
Vegard’s Law and Superstructural Phases in Al<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs(100) Epitaxial Heterostructures.
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- Semiconductors, 2005, v. 39, n. 3, p. 336, doi. 10.1134/1.1882797
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Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.
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- Semiconductors, 2004, v. 38, n. 12, p. 1390, doi. 10.1134/1.1836058
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E[sub 0] Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States.
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- Semiconductors, 2002, v. 36, n. 7, p. 784, doi. 10.1134/1.1493749
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- Article
E[sub 0] Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions.
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- Semiconductors, 2002, v. 36, n. 3, p. 259, doi. 10.1134/1.1461398
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Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E[sub 0] Component of the Photoreflectance Signal.
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- Semiconductors, 2002, v. 36, n. 2, p. 153, doi. 10.1134/1.1453428
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- Article
A Combined Technique for Studying the Multicomponent Spectra of Photoreflection from Semiconductors.
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- Semiconductors, 2002, v. 36, n. 1, p. 48, doi. 10.1134/1.1434513
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- Article
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne.
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- Semiconductors, 2001, v. 35, n. 8, p. 956, doi. 10.1134/1.1393035
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- Article
Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E[sub 0] Fundamental Transition.
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- Semiconductors, 2000, v. 34, n. 9, p. 1045, doi. 10.1134/1.1309419
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- Article
Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data.
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- Semiconductors, 2000, v. 34, n. 1, p. 73, doi. 10.1134/1.1187949
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Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si[sup +] Ions.
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- Semiconductors, 2000, v. 34, n. 1, p. 87, doi. 10.1134/1.1187951
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Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor.
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- Semiconductors, 1999, v. 33, n. 6, p. 665, doi. 10.1134/1.1187752
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- Article
Thin-Film Oxide Materials for Ozone Detection in Thermal Modulation Mode.
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- Inorganic Materials, 2023, v. 59, n. 5, p. 487, doi. 10.1134/S0020168523050151
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Effect of Process Conditions on the Structure and Optical Properties of MoO<sub>3</sub> Produced by Vapor Transport Deposition.
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- Inorganic Materials, 2019, v. 55, n. 1, p. 49, doi. 10.1134/S0020168519010035
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- Article
IR Spectroscopic Study of Interatomic Interaction in [(CoFeB)<sub>60</sub>C<sub>40</sub>/SiO<sub>2</sub>]<sub>200</sub> and [(CoFeB)<sub>34</sub>(SiO<sub>2</sub>)<sub>66</sub>/C]<sub>46</sub> Multilayer Nanostructures with Metal-Containing Composite Layers
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- Inorganic Materials, 2018, v. 54, n. 2, p. 140, doi. 10.1134/S002016851802005X
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- Article
USXES and Optical Phenomena in Si Low-Dimensional Structures Dependent on Morphology and Silicon Oxide Composition on Si Surface.
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- Surface Review & Letters, 2002, v. 9, n. 2, p. 1047, doi. 10.1142/S0218625X02003329
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- Article
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.
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- Semiconductors, 2019, v. 53, n. 7, p. 923, doi. 10.1134/S106378261907008X
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- Article