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Effect of Aluminum on the Structure and Electrical Properties of Amorphous Diamond-Like Silicon-Carbon Films.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 6, p. 1199, doi. 10.1134/S1027451023060174
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Thin-Film Oxide Materials for Ozone Detection in Thermal Modulation Mode.
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- Inorganic Materials, 2023, v. 59, n. 5, p. 487, doi. 10.1134/S0020168523050151
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On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.
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- Semiconductors, 2019, v. 53, n. 7, p. 923, doi. 10.1134/S106378261907008X
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Influence of the Crystal Structure of the Nucleus on the Morphology of t-ZnO Tetrapods.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 212, doi. 10.1134/S1063774519020032
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Effect of Process Conditions on the Structure and Optical Properties of MoO<sub>3</sub> Produced by Vapor Transport Deposition.
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- Inorganic Materials, 2019, v. 55, n. 1, p. 49, doi. 10.1134/S0020168519010035
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IR Spectroscopic Study of Interatomic Interaction in [(CoFeB)<sub>60</sub>C<sub>40</sub>/SiO<sub>2</sub>]<sub>200</sub> and [(CoFeB)<sub>34</sub>(SiO<sub>2</sub>)<sub>66</sub>/C]<sub>46</sub> Multilayer Nanostructures with Metal-Containing Composite Layers
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- Inorganic Materials, 2018, v. 54, n. 2, p. 140, doi. 10.1134/S002016851802005X
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Photoluminescence Properties of Nanoporous Nanocrystalline Carbonate-Substituted Hydroxyapatite.
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- Optics & Spectroscopy, 2018, v. 124, n. 2, p. 187, doi. 10.1134/S0030400X18020066
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X-ray and x-ray electron spectroscopy of new materials.
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- Journal of Structural Chemistry, 2017, v. 58, n. 6, p. 1057, doi. 10.1134/S0022476617060014
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Electronic structure and phase composition of silicon oxide in the metal-containing composite layers of a [(CoFeB)(SiO)/C] multilayer amorphous nanostructure with carbon interlayers.
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- Inorganic Materials, 2017, v. 53, n. 9, p. 930, doi. 10.1134/S0020168517090060
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Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO/insulator structures from the results of synchrotron investigations.
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- Semiconductors, 2017, v. 51, n. 3, p. 349, doi. 10.1134/S1063782617030241
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Deep Centers at the Interface in InGaTe/InAs and InTe/InAs Heterostructures.
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- Semiconductors, 2016, v. 50, n. 3, p. 309, doi. 10.1134/S1063782616030076
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On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin.
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- Semiconductors, 2016, v. 50, n. 2, p. 180, doi. 10.1134/S1063782616020214
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Composition and optical properties of amorphous a-SiO:H films with silicon nanoclusters.
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- Semiconductors, 2016, v. 50, n. 2, p. 212, doi. 10.1134/S1063782616020251
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Atomic and electronic structure of amorphous and nanocrystalline layers of semi-insulating silicon produced by chemical-vapor deposition at low pressures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2015, v. 9, n. 6, p. 1228, doi. 10.1134/S1027451015060257
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Peculiarities of the electronic structure and phase composition of amorphous (SiO)(a-Si: H) composite films according to X-ray spectroscopy data.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 1010, doi. 10.1134/S1063785015100296
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Variations of the optical characteristics of nano-, meso-, and macroporous silicon with time.
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- Technical Physics, 2015, v. 60, n. 7, p. 1096, doi. 10.1134/S1063784215070166
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Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy.
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- Technical Physics Letters, 2015, v. 41, n. 4, p. 344, doi. 10.1134/S106378501504015X
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Formation of Si nanocrystals in multilayered nanoperiodic AlO/SiO/AlO/SiO/.../Si(100) structures: Synchrotron and photoluminescence data.
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- Semiconductors, 2015, v. 49, n. 3, p. 409, doi. 10.1134/S1063782615030227
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Structure and composition of metal-substituted calcium-deficient hydroxyapatite.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 6, p. 1128, doi. 10.1134/S1027451014060032
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Specific features of the sol-gel formation and optical properties of 3 d metal/porous silicon composites.
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- Semiconductors, 2014, v. 48, n. 4, p. 551, doi. 10.1134/S1063782614040174
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Erratum to: 'Synchrotron studies of SnO wire-like crystals'.
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- 2014
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- Erratum
Optical characteristics of porous silicon structures.
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- Technical Physics, 2014, v. 59, n. 2, p. 224, doi. 10.1134/S1063784214020145
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Synchrotron studies of SnO wire-like crystals.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 1, p. 111, doi. 10.1134/S102745101401025X
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Synchrotron study of the formation of nanoclusters in Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/…/Si(100) multilayer nanostructures.
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- Semiconductors, 2013, v. 47, n. 10, p. 1316, doi. 10.1134/S106378261310028X
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Structural and optical properties of porous silicon prepared from a p-epitaxial layer on n-Si(111).
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- Technical Physics, 2013, v. 58, n. 3, p. 404, doi. 10.1134/S1063784213030171
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Optical properties of porous silicon processed in tetraethyl orthosilicate.
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- Technical Physics, 2013, v. 58, n. 2, p. 284, doi. 10.1134/S1063784213020151
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Properties of epitaxial (AlGaAs)C alloys grown by MOCVD autoepitaxy.
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- Semiconductors, 2013, v. 47, n. 1, p. 7, doi. 10.1134/S1063782613010211
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Peculiarities of electron-energy structure of surface layers of porous silicon formed on p-type substrates.
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- Inorganic Materials, 2012, v. 48, n. 14, p. 1291, doi. 10.1134/S0020168512140063
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Composition and reactivity of porous silicon nanopowders.
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- Inorganic Materials, 2012, v. 48, n. 10, p. 965, doi. 10.1134/S0020168512100032
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Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p-layer.
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- Semiconductors, 2012, v. 46, n. 8, p. 1079, doi. 10.1134/S1063782612080131
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Synchrotron investigation of the multilayer nanoperiodical Al<sub>2</sub>O<sub>3</sub>/SiO/Al<sub>2</sub>O<sub>3</sub>/SiO...Si structure formation Synchrotron investigation of the multilayer nanoperiodical Al<sub>2</sub>O<sub>3</sub>/SiO/Al<sub>2</sub>O<sub>3</sub>/SiO...Si structure formation
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 8, p. 1182, doi. 10.1002/sia.4868
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Interference phenomena of synchrotron radiation in TEY spectra for silicon-on-insulator structure.
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- Journal of Synchrotron Radiation, 2012, v. 19, n. 4, p. 609, doi. 10.1107/S0909049512022844
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Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys.
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- Semiconductors, 2012, v. 46, n. 6, p. 719, doi. 10.1134/S106378261206019X
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AES and XPS investigations of the surface layers of porous silicon with Fe, Co, and Ni embedded pores.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 1, p. 106, doi. 10.1134/S1027451012020061
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Influence of natural aging on photoluminescence from porous silicon.
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- Technical Physics, 2012, v. 57, n. 2, p. 305, doi. 10.1134/S1063784212020156
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XPS study of the oxidation of nanosize Ni/Si(100) films.
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- Journal of Structural Chemistry, 2011, v. 52, p. 115, doi. 10.1134/S002247661107016X
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X-ray diffraction and IR spectroscopy investigation of synthesized and biogenic nanocrystalline hydroxyapatite.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, v. 5, n. 6, p. 1162, doi. 10.1134/S1027451011120068
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Spinodal decomposition of GaInAsP quaternary alloys.
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- Semiconductors, 2011, v. 45, n. 11, p. 1433, doi. 10.1134/S1063782611110236
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Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films' surface layers containing silicon nanocrystals.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, v. 5, n. 5, p. 958, doi. 10.1134/S102745101110020X
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- Article
Effect of natural aging on photoluminescence of porous silicon.
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- Technical Physics Letters, 2011, v. 37, n. 9, p. 789, doi. 10.1134/S1063785011090124
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Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride AlGaAs:Si/GaAs(100) heterostructures.
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- Semiconductors, 2011, v. 45, n. 4, p. 481, doi. 10.1134/S106378261104021X
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Synchrotron radiation interference in front of the silicon absorption edge for silicon-on-insulator structures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, v. 5, n. 1, p. 141, doi. 10.1134/S1027451011020078
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Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
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- Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
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Features of atomic and electronic structure of oxides on porous silicon surface according to XANES data.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2010, v. 4, n. 3, p. 384, doi. 10.1134/S1027451010030055
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Atomic and electronic structure of the surface of porous silicon layers.
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- Russian Journal of General Chemistry, 2010, v. 80, n. 6, p. 1128, doi. 10.1134/S1070363210060150
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Morphology of tin oxide nanocrystals grown by vapor-phase transport method.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 541, doi. 10.1134/S1063785010060167
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The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089
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Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
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- Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
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Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
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Preparation of porous silicon nanocomposites with iron and cobalt and investigation of their electron structure by X-ray spectroscopy techniques.
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- Technical Physics Letters, 2009, v. 35, n. 9, p. 827, doi. 10.1134/S1063785009090120
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