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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS).
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- Micromachines, 2021, v. 12, n. 5, p. 502, doi. 10.3390/mi12050502
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- Article
The visual pigment xenopsin is widespread in protostome eyes and impacts the view on eye evolution.
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- eLife, 2020, p. 1, doi. 10.7554/eLife.55193
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- Article
In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors.
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- Advances in Materials Science & Engineering, 2023, p. 1, doi. 10.1155/2023/1319081
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- Article
Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers.
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- Advances in Materials Science & Engineering, 2021, p. 1, doi. 10.1155/2021/8862946
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- Article
Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW).
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- International Journal of Analytical Chemistry, 2022, p. 1, doi. 10.1155/2022/2011170
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- Article
Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW).
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- International Journal of Analytical Chemistry, 2021, p. 1, doi. 10.1155/2021/3402411
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- Article
Microfluidic Optical Shutter Flexibly x-y Actuated via Electrowetting-on-Dielectrics with <20 ms Response Time.
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- Advances in Optical Technologies, 2017, p. 1, doi. 10.1155/2017/7610652
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- Article
Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA).
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- Advances in Materials Science & Engineering, 2022, p. 1, doi. 10.1155/2022/9747505
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- Article
1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0).
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- Advances in OptoElectronics, 2019, p. 1, doi. 10.1155/2019/2719808
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- Article
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS).
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- Advances in OptoElectronics, 2018, p. 1, doi. 10.1155/2018/8908354
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- Article
Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens.
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- Advances in OptoElectronics, 2017, p. 1, doi. 10.1155/2017/5283850
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- Publication type:
- Article
Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers.
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- Advances in OptoElectronics, 2014, p. 1, doi. 10.1155/2014/293590
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- Article