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The application of low energy ion scattering spectroscopy (LEIS) in sub 28-nm CMOS technology.
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- Surface & Interface Analysis: SIA, 2017, v. 49, n. 12, p. 1175, doi. 10.1002/sia.6312
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AES and Related Techniques for Yield Improvement, Metrology and Development Support of ULSI Circuits Manufactured in ≤ 28nm CMOS Technology.
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- Microscopy & Microanalysis, 2014, v. 20, n. S3, p. 2054, doi. 10.1017/S1431927614012008
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Einsatz physikalischer Analysemethoden zur Charakterisierung von dünnen Schichten und Grenzflächen in der Halbleiterindustrie.
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- Vakuum in Forschung und Praxis, 2001, v. 13, n. 1, p. 29, doi. 10.1002/1522-2454(200101)13:1<29::AID-VIPR29>3.0.CO;2-6
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