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MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.
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- Semiconductors, 2024, v. 58, n. 5, p. 451, doi. 10.1134/S1063782624050130
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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
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- Article
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.
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- Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085
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Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205
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Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well.
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- Semiconductors, 2017, v. 51, n. 10, p. 1360, doi. 10.1134/S1063782617100086
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Effect of active-region 'volume' on the radiative properties of laser heterostructures with radiation output through the substrate.
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- Semiconductors, 2017, v. 51, n. 1, p. 73, doi. 10.1134/S1063782617010158
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Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.
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- Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180
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On a semiconductor laser with a p- n tunnel junction with radiation emission through the substrate.
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- Semiconductors, 2015, v. 49, n. 11, p. 1440, doi. 10.1134/S1063782615110123
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An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells.
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- Semiconductors, 2015, v. 49, n. 2, p. 170, doi. 10.1134/S1063782615020025
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Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.
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- Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054
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- Article
Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs.
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- Semiconductors, 2013, v. 47, n. 11, p. 1475, doi. 10.1134/S106378261311002X
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Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.
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- Semiconductors, 2013, v. 47, n. 9, p. 1219, doi. 10.1134/S1063782613090261
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- Article
Induction of Chromosome Aberrations is Non-linear within the Low Dose Region and Depends on Dose Rate.
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- Radiation Protection Dosimetry, 2002, v. 99, n. 1-4, p. 245, doi. 10.1093/oxfordjournals.rpd.a006774
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Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2022, v. 66, n. 4, p. 1194, doi. 10.1134/S106378422109005X
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Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2021, v. 66, n. 11, p. 1194, doi. 10.1134/S106378422109005X
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The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer.
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- Technical Physics Letters, 2015, v. 41, n. 7, p. 648, doi. 10.1134/S1063785015070020
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Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates.
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- Technical Physics Letters, 2015, v. 41, n. 3, p. 304, doi. 10.1134/S1063785015030177
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Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate.
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- Technical Physics Letters, 2014, v. 40, n. 5, p. 432, doi. 10.1134/S1063785014050228
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Effect of Low-Frequency Pulsed Magnetic Field and Low-Level Laser Radiation on Oxidoreductase Activity and Growth of Fungi—Active Destructors of Polymer Materials.
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- Microbiology (00262617), 2019, v. 88, n. 1, p. 72, doi. 10.1134/S0026261719010053
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The consequences of chronic radiation exposure of scots pine in the remote period after the chernobyl accident.
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- Russian Journal of Ecology, 2016, v. 47, n. 1, p. 26, doi. 10.1134/S1067413616010057
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Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate.
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- JETP Letters, 2015, v. 100, n. 12, p. 795, doi. 10.1134/S0021364014240023
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