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Al 2 O 3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.
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- Materials (1996-1944), 2023, v. 16, n. 16, p. 5638, doi. 10.3390/ma16165638
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A Low Temperature Growth of Cu 2 O Thin Films as Hole Transporting Material for Perovskite Solar Cells.
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- Materials (1996-1944), 2022, v. 15, n. 21, p. 7790, doi. 10.3390/ma15217790
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- Article
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 8, p. N.PAG, doi. 10.3390/nano12081340
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- Article
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 2, p. 182, doi. 10.3390/nano12020182
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- Article
Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.
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- Materials (1996-1944), 2022, v. 15, n. 1, p. 264, doi. 10.3390/ma15010264
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions.
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- Materials (1996-1944), 2021, v. 14, n. 8, p. 1966, doi. 10.3390/ma14081966
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- Article
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901171
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- Article
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.
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- Materials (1996-1944), 2019, v. 12, n. 21, p. 3468, doi. 10.3390/ma12213468
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- Article
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700613
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- Article
Electrical characterization of trapping phenomena at SiO<sub>2</sub>/SiC and SiO<sub>2</sub>/GaN in MOS-based devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600366
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- Article
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1091, doi. 10.1002/pssa.201431636
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- Article
Current-induced defect formation in multi-walled carbon nanotubes.
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- Journal of Nanoparticle Research, 2014, v. 16, n. 2, p. 1, doi. 10.1007/s11051-014-2287-4
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- Article
Nanofabrication processes for innovative nanohole-based solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 8, p. 1564, doi. 10.1002/pssa.201200949
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- Article
The Recent Eruption of Etna.
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- Nature, 1928, v. 122, n. 3085, p. 926, doi. 10.1038/122926a0
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- Article