Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 6, p. 895, doi. 10.3390/electronics11060895
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- Publication type:
- Article
Works by Deng, Xuguang
Results: 8
1
2
Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200505
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- Publication type:
- Article
3
Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates.
- Published in:
- Crystal Research & Technology, 2022, v. 57, n. 5, p. 1, doi. 10.1002/crat.202100184
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- Publication type:
- Article
4
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253
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- Publication type:
- Article
5
Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400075
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- Publication type:
- Article
6
Design of improved pixel sharing CTIA infrared readout circuit based on bandgap reference.
- Published in:
- Laser Technology, 2024, v. 48, n. 6, p. 816, doi. 10.7510/jgjs.issn.1001-3806.2024.06.006
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- Publication type:
- Article
7
Influence of pressure on the properties of AlN deposited by DC reactive magnetron sputtering on Si (100) substrate.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 2, p. 146, doi. 10.1049/mnl.2018.5293
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- Publication type:
- Article
8
Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 1, p. 1, doi. 10.1002/pssb.202200279
- By:
- Publication type:
- Article