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Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 25, p. 1, doi. 10.1002/adfm.202315781
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- Article
A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 21, p. 3880, doi. 10.3390/nano12213880
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- Article
Enhanced Water‐Splitting Application Using GaN/AlGaN Heterojunctions.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 19, p. 1, doi. 10.1002/pssa.202200234
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- Article
Study on Localized Surface Plasmon Coupling with Many Radiators.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 11, p. 3105, doi. 10.3390/nano11113105
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- Article