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Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications.
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- Journal of Electronic Materials, 2020, v. 49, n. 2, p. 1322, doi. 10.1007/s11664-019-07802-6
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- Article
Analytical Modeling of Dual-Junction Tandem Solar Cells Based on an InGaP/GaAs Heterojunction Stacked on a Ge Substrate.
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- Journal of Electronic Materials, 2019, v. 48, n. 6, p. 4107, doi. 10.1007/s11664-019-07180-z
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- Article
Multiobjective Optimization of Design of 4H-SiC Power MOSFETs for Specific Applications.
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- Journal of Electronic Materials, 2019, v. 48, n. 6, p. 3871, doi. 10.1007/s11664-019-07142-5
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- Article
Transient analysis of a high-speed thermo-optic modulator integrated in an all-silicon waveguide.
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- Optical Engineering, 2003, v. 42, n. 1, p. 169, doi. 10.1117/1.1523039
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Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions.
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- Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 11, p. 1, doi. 10.1007/s00339-020-03850-6
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- Article
Temperature and SiO<sub>2</sub>/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 5, p. N.PAG, doi. 10.1007/s00339-019-2606-9
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- Article