Found: 9
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Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes.
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- Electronics (2079-9292), 2023, v. 12, n. 9, p. 2007, doi. 10.3390/electronics12092007
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- Article
Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer.
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- Microwave & Optical Technology Letters, 2021, v. 63, n. 9, p. 2376, doi. 10.1002/mop.32919
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- Article
Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics.
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- European Physical Journal - Applied Physics, 2013, v. 64, n. 2, p. 00, doi. 10.1051/epjap/2013130455
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- Article
Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-71064-0
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- Article
Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200476
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- Article
Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900760
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- Article
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700637
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- Article
Recent improvements of flexible GaN-based HEMT technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600484
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- Article
Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 114, doi. 10.1002/pssa.201532302
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- Article