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Analysis of Cobalt Intercalation under the Buffer Carbon Layer on a SiC(0001) Single Crystal.
Published in:
Journal of Experimental & Theoretical Physics, 2022, v. 134, n. 2, p. 188, doi. 10.1134/S1063776122020121
By:
- Filnov, S. O.;
- Rybkina, A. A.;
- Tarasov, A. V.;
- Eryzhenkov, A. V.;
- Eliseev, I. A.;
- Davydov, V. Yu.;
- Shikin, A. M.;
- Rybkin, A. G.
Publication type:
Article
Modification of the Electronic Structure of Quasi-Free-Standing Graphene by the Adsorption and Intercalation of Mn Atoms.
Published in:
Journal of Experimental & Theoretical Physics, 2021, v. 132, n. 6, p. 906, doi. 10.1134/S1063776121050101
By:
- Gogina, A. A.;
- Rybkin, A. G.;
- Shikin, A. M.;
- Tarasov, A. V.;
- Petaccia, L.;
- Di Santo, G.;
- Eliseyev, I. A.;
- Lebedev, S. P.;
- Davydov, V. Yu.;
- Klimovskikh, I. I.
Publication type:
Article
Neutron transmutation doping of silicon 30Si monoisotope with phosphorus.
Published in:
Technical Physics Letters, 2006, v. 32, n. 6, p. 550, doi. 10.1134/S1063785006060307
By:
- Ionov, A. N.;
- Baranov, P. G.;
- Ber, B. Ya.;
- Bulanov, A. D.;
- Godisov, O. N.;
- Gusev, A. V.;
- Davydov, V. Yu.;
- Il'in, I. V.;
- Kaliteevskiĭ, A. K.;
- Kaliteevskiĭ, M. A.;
- Safronov, A. Yu.;
- Lazebnik, I. M.;
- Pohl, H.-J.;
- Riemann, H.;
- Abrosimov, N. V.;
- Kop'ev, P. S.
Publication type:
Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
Published in:
Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
By:
- Bessolov, V. N.;
- Davydov, V. Yu.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Mosina, G. N.;
- Raevskiǐ, S. D.;
- Rodin, S. N.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Park, Hee Seok;
- Koike, Masayoshi
Publication type:
Article
Bulk Large-Area GaN Layers.
Published in:
Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
By:
- Zhilyaev, Yu. V.;
- Nasonov, A. V.;
- Raevskiı, S. D.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Yusupova, Sh. A.;
- Davydov, V. Yu.
Publication type:
Article
III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared.
Published in:
Scientific Reports, 2015, p. 17970, doi. 10.1038/srep17970
By:
- Shubina, T. V.;
- Pozina, G.;
- Jmerik, V. N.;
- Davydov, V. Yu.;
- Hemmingsson, C.;
- Andrianov, A. V.;
- Kazanov, D. R.;
- Ivanov, S. V.
Publication type:
Article
Crystal Structure, Raman Spectroscopy and Dielectric Properties of New Semiorganic Crystals Based on 2-Methylbenzimidazole.
Published in:
Crystals (2073-4352), 2019, v. 9, n. 11, p. 573, doi. 10.3390/cryst9110573
By:
- Balashova, E. V.;
- Svinarev, F. B.;
- Zolotarev, A. A.;
- Levin, A. A.;
- Brunkov, P. N.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Redkov, A. V.;
- Pankova, G. A.;
- Krichevtsov, B. B.
Publication type:
Article
InSe as a case between 3D and 2D layered crystals for excitons.
Published in:
Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-11487-0
By:
- Shubina, T. V.;
- Davydov, V. Yu.;
- Platonov, A. V.;
- Semina, M. A.;
- Gil, B.;
- Desrat, W.;
- Moret, M.;
- Tiberj, A.;
- Briot, O.
Publication type:
Article
Fullerene Films Highly Resistant to Laser Radiation.
Published in:
Technical Physics, 2004, v. 49, n. 2, p. 258, doi. 10.1134/1.1648966
By:
- Khodorkovskii, M.A.;
- Murashov, S.V.;
- Artamonova, T.O.;
- Shakhmin, A.L.;
- Belyaeva, A.A.;
- Davydov, V. Yu.
Publication type:
Article
Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation.
Published in:
Physica Status Solidi - Rapid Research Letters, 2007, v. 1, n. 4, p. 159, doi. 10.1002/pssr.200701096
By:
- Klochikhin, A. A.;
- Davydov, V. Yu.;
- Strashkova, I. Yu.;
- Brunkov, P. N.;
- Gutkin, A. A.;
- Rudinsky, M. E.;
- Chen, H.-Y.;
- Gwo, S.
Publication type:
Article
Optical Properties of Cu2O Nanowhiskers.
Published in:
Semiconductors, 2023, v. 57, n. 12, p. 543, doi. 10.1134/S1063782623080080
By:
- Labzovskaya, M. E.;
- Novikov, B. V.;
- Serov, A. Yu.;
- Mikushev, S. V.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Talalaev, V. G.
Publication type:
Article
Electron-Phonon Interaction in Perovskite Nanocrystals in Fluorophosphate Glass Matrix.
Published in:
Semiconductors, 2024, v. 58, n. 2, p. 103, doi. 10.1134/S1063782624020027
By:
- Bataev, M. N.;
- Kuznetsova, M. S.;
- Pankin, D. V.;
- Smirnov, M. B.;
- Verbin, S. Yu.;
- Ignatiev, I. V;
- Eliseyev, I. A.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Kolobkova, E. V.
Publication type:
Article
Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3.
Published in:
Semiconductors, 2024, v. 58, n. 1, p. 8, doi. 10.1134/S1063782624010020
By:
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Eliseyev, I. A.;
- Kitaev, Yu. E.;
- Sharofidinov, S. S.;
- Lebedev, A. A.;
- Panov, D. Yu.;
- Spiridonov, V. A.;
- Bauman, D. A.;
- Romanov, A. E.;
- Kozlovski, V. V.
Publication type:
Article
Growth of Hexagonal Boron Nitride (hBN) on Silicon Carbide Substrates by the Physical Vapor Transport Method.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 483, doi. 10.1134/S1063782623080092
By:
- Mokhov, E. N.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Nagaluk, S. S.
Publication type:
Article
Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype.
Published in:
Semiconductors, 2023, v. 57, n. 6, p. 305, doi. 10.1134/S1063782623080109
By:
- Mynbaeva, M. G.;
- Amelchuk, D. G.;
- Smirnov, A. N.;
- Nikitina, I. P.;
- Lebedev, S. P.;
- Davydov, V. Yu.;
- Lebedev, A. A.
Publication type:
Article
Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 244, doi. 10.1134/S1063782623070138
By:
- Lebedev, M. V.;
- Lvova, T. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Koroleva, A. V.;
- Zhizhin, E. V.;
- Lebedev, S. V.
Publication type:
Article
Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method.
Published in:
Semiconductors, 2023, v. 57, n. 2, p. 121, doi. 10.1134/S1063782623040103
By:
- Lebedev, A. A.;
- Davydov, V. Yu.;
- Eliseev, I. A.;
- Lebedev, S. P.;
- Nikitina, I. P.;
- Oganesyan, G. A.;
- Smirnov, A. N.;
- Shakhov, L. V.
Publication type:
Article
Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 844, doi. 10.1134/S1063782621100146
By:
- Lebedev, M. V.;
- Lvova, T. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.
Publication type:
Article
Structural and Dynamical Properties of Short-Period GaN/AlN Superlattices: Experiment and Theory.
Published in:
Semiconductors, 2020, v. 54, n. 12, p. 1706, doi. 10.1134/S1063782620120052
By:
- Eliseyev, I. A.;
- Davydov, V. Yu.;
- Roginskii, E. M.;
- Kitaev, Yu. E.;
- Smirnov, A. N.;
- Yagovkina, M. A.;
- Nechaev, D. V.;
- Jmerik, V. N.;
- Smirnov, M. B.
Publication type:
Article
Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni.
Published in:
Semiconductors, 2020, v. 54, n. 12, p. 1674, doi. 10.1134/S1063782620120064
By:
- Eliseyev, I. A.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Belov, S. V.;
- Zubov, A. V.;
- Lebedev, S. P.;
- Lebedev, A. A.
Publication type:
Article
A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 991, doi. 10.1134/S1063782620090031
By:
- Babichev, A. V.;
- Kadinskaya, S. A.;
- Shubina, K. Yu.;
- Vasiliev, A. A.;
- Blokhin, A. A.;
- Moiseev, E. I.;
- Blokhin, S. A.;
- Mukhin, I. S.;
- Eliseyev, I. A.;
- Davydov, V. Yu.;
- Brunkov, P. N.;
- Kryzhanovskaya, N. V.;
- Egorov, A. Yu.
Publication type:
Article
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC.
Published in:
Semiconductors, 2019, v. 53, n. 14, p. 1904, doi. 10.1134/S1063782619140057
By:
- Eliseyev, I. A.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Nestoklon, M. O.;
- Dementev, P. A.;
- Lebedev, S. P.;
- Lebedev, A. A.;
- Zubov, A. V.;
- Mathew, S.;
- Pezoldt, J.;
- Bokai, K. A.;
- Usachov, D. Yu.
Publication type:
Article
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions.
Published in:
Semiconductors, 2019, v. 53, n. 11, p. 1479, doi. 10.1134/S1063782619110058
By:
- Davydov, V. Yu.;
- Jmerik, V. N.;
- Roginskii, E. M.;
- Kitaev, Yu. E.;
- Beltukov, Y. M.;
- Smirnov, M. B.;
- Nechaev, D. V.;
- Smirnov, A. N.;
- Eliseyev, I. A.;
- Brunkov, P. N.;
- Ivanov, S. V.
Publication type:
Article
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
By:
- Andreev, B. A.;
- Lobanov, D. N.;
- Krasil'nikova, L. V.;
- Bushuykin, P. A.;
- Yablonskiy, A. N.;
- Novikov, A. V.;
- Davydov, V. Yu.;
- Yunin, P. A.;
- Kalinnikov, M. I.;
- Skorohodov, E. V.;
- Krasil'nik, Z. F.
Publication type:
Article
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1131, doi. 10.1134/S1063782619080189
By:
- Sorokin, S. V.;
- Avdienko, P. S.;
- Sedova, I. V.;
- Kirilenko, D. A.;
- Yagovkina, M. A.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Ivanov, S. V.
Publication type:
Article
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1048, doi. 10.1134/S106378261908013X
By:
- Kurdyukov, D. A.;
- Feoktistov, N. A.;
- Kirilenko, D. A.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Golubev, V. G.
Publication type:
Article
High Quality Graphene Grown by Sublimation on 4H-SiC (0001).
Published in:
Semiconductors, 2018, v. 52, n. 14, p. 1882, doi. 10.1134/S1063782618140154
By:
- Lebedev, A. A.;
- Davydov, V. Yu.;
- Usachov, D. Yu.;
- Lebedev, S. P.;
- Smirnov, A. N.;
- Eliseyev, I. A.;
- Dunaevskiy, M. S.;
- Gushchina, E. V.;
- Bokai, K. A.;
- Pezoldt, J.
Publication type:
Article
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143
By:
- Malin, T. V.;
- Milakhin, D. S.;
- Mansurov, V. G.;
- Galitsyn, Yu. G.;
- Kozhuhov, A. S.;
- Ratnikov, V. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Zhuravlev, K. S.
Publication type:
Article
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 667, doi. 10.1134/S1063782618050123
By:
- Jmerik, V. N.;
- Shubina, T. V.;
- Nechaev, D. V.;
- Semenov, A. N.;
- Kirilenko, D. A.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Eliseev, I. A.;
- Posina, G.;
- Ivanov, S. V.
Publication type:
Article
Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 161, doi. 10.1134/S1063782610020065
By:
- Davydov, V. Yu.;
- Klochikhin, A. A.;
- Smirnov, A. N.;
- Strashkova, I. Yu.;
- Krylov, A. S.;
- Hai Lu;
- Schaff, William J.;
- Lee, H.-M.;
- Hong, Y.-L.;
- Gwo, S.
Publication type:
Article
Surface states on the n-InN-electrolyte interface.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1416, doi. 10.1134/S1063782608120087
By:
- Gutkin, A. A.;
- Rudinsky, M. É.;
- Brunkov, P. N.;
- Klochikhin, A. A.;
- Davydov, V. Yu.;
- Chen, H.-Y.;
- Gwo, S.
Publication type:
Article
Electronic and Vibrational States in InN and InxGa1 – xN Solid Solutions.
Published in:
Semiconductors, 2004, v. 38, n. 8, p. 861, doi. 10.1134/1.1787109
By:
- Davydov, V. Yu.;
- Klochikhin, A. A.
Publication type:
Article
Isotope-Pure [sup 28]Si Layers Grown by VPE.
Published in:
Semiconductors, 2002, v. 36, n. 12, p. 1398, doi. 10.1134/1.1529252
By:
- Godisov, O. N.;
- Kaliteevsky, A. K.;
- Safronov, A. Yu.;
- Korolev, V. I.;
- Aruev, P. N.;
- Ber, B. Ya.;
- Davydov, V. Yu.;
- Zabrodskaya, N. V.;
- Zabrodsky, V. V.;
- Kaliteevsky, M. A.;
- Kop’ev, P. S.;
- Kovarsky, A. P.;
- Sukhanov, V. L.
Publication type:
Article
Isotope-Pure Silicon Layers Grown by MBE.
Published in:
Semiconductors, 2002, v. 36, n. 12, p. 1400, doi. 10.1134/1.1529253
By:
- Godisov, O. N.;
- Kaliteevsky, A. K.;
- Safronov, A. Yu.;
- Korolev, V. I.;
- Ber, B. Ya.;
- Davydov, V. Yu.;
- Denisov, D. V.;
- Kaliteevsky, M. A.;
- Kop’ev, P. S.;
- Kovarsky, A. P.;
- Ustinov, V. M.;
- Pohl, H.-J.
Publication type:
Article
The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222
By:
- Terukov, E. I.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Gusev, O. B.;
- Davydov, V. Yu.;
- Mosina, G. N.
Publication type:
Article
Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation.
Published in:
Semiconductors, 2002, v. 36, n. 10, p. 1106, doi. 10.1134/1.1513852
By:
- Arutyunov, N. Yu.;
- Mikhaılin, A. V.;
- Davydov, V. Yu.;
- Emtsev, V. V.;
- Oganesyan, G. A.;
- Haller, E. E.
Publication type:
Article
Preparation and Properties of Isotopically Pure Polycrystalline Silicon.
Published in:
Semiconductors, 2001, v. 35, n. 8, p. 877, doi. 10.1134/1.1393019
By:
- Godisov, O. N.;
- Kaliteevskiı, A. K.;
- Korolev, V. I.;
- Ber, B. Ya.;
- Davydov, V. Yu.;
- Kaliteevskiı, M. A.;
- Kop’ev, P. S.
Publication type:
Article
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.
Published in:
Semiconductors, 1999, v. 33, n. 1, p. 1, doi. 10.1134/1.1187636
By:
- Davydov, V. Yu.;
- Lundin, V. V.;
- Smirnov, A. N.;
- Sobolev, N. A.;
- Usikov, A. S.;
- Emel’yanov, A. M.;
- Makoviıchuk, M. I.;
- Parshin, E. O.
Publication type:
Article
III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy.
Published in:
Physica Status Solidi (B), 2016, v. 253, n. 5, p. 845, doi. 10.1002/pssb.201552657
By:
- Shubina, T. V.;
- Jmerik, V. N.;
- Davydov, V. Yu.;
- Kazanov, D. R.;
- Smirnov, A. N.;
- Nechaev, D. V.;
- Kuznetsova, N.;
- Pozina, G.;
- Hemmingsson, C.;
- Ivanov, S. V.
Publication type:
Article
Resonant Raman scattering in InGaN alloys.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1494, doi. 10.1002/pssb.200565350
By:
- Davydov, V. Yu.;
- Klochikhin, A. A.;
- Goncharuk, I. N.;
- Smirnov, A. N.;
- Sakharov, A. V.;
- Skvortsov, A. P.;
- Yagovkina, M. A.;
- Lebedev, V. M.;
- Lu, Hai;
- Schaff, William J.
Publication type:
Article
A gauge invariant approach to the Raman scattering in heavily doped crystals.
Published in:
Physica Status Solidi (B), 2005, v. 242, n. 7, p. R58, doi. 10.1002/pssb.200510025
By:
- Klochikhin, A. A.;
- Davydov, V. Yu.;
- Emtsev, V. V.;
- Smirnov, A. N.;
- Baltz, R. v.
Publication type:
Article
Manifestation of the equilibrium hole distribution in photoluminescence of n-InN.
Published in:
Physica Status Solidi (B), 2005, v. 242, n. 4, p. R33, doi. 10.1002/pssb.200510007
By:
- Klochikhin, A. A.;
- Davydov, V. Yu.;
- Emtsev, V. V.;
- Sakharov, A. V.;
- Kapitonov, V. A.;
- Andreev, B. A.;
- Lu, Hai;
- Schaff, William J.
Publication type:
Article
Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys.
Published in:
Physica Status Solidi (B), 2003, v. 240, n. 2, p. 425, doi. 10.1002/pssb.200303448
By:
- V. Yu. Davydov;
- A. A. Klochikhin;
- V. V. Emtsev;
- A. N. Smirnov;
- I. N. Goncharuk;
- A. V. Sakharov;
- D. A. Kurdyukov;
- M. V. Baidakova;
- V. A. Vekshin;
- S. V. Ivanov;
- J. Aderhold;
- J. Graul;
- A. Hashimoto;
- A. Yamamoto
Publication type:
Article
Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 484, doi. 10.1002/pssa.201200700
By:
- Davydov, V. Yu.;
- Roginskii, E. M.;
- Smirnov, A. N.;
- Kitaev, Yu. E.;
- Yagovkina, M. A.;
- Kyutt, R. N.;
- Rozhavskaya, M. M.;
- Zavarin, E. E.;
- Lundin, W. V.;
- Smirnov, M. B.
Publication type:
Article
Acceleration Abilities of Combined Explosive Charges Containing Dispersed Aluminum in a Thin Peripheral Layer.
Published in:
Combustion, Explosion, & Shock Waves, 2019, v. 55, n. 4, p. 478, doi. 10.1134/S0010508219040154
By:
- Davydov, V. Yu.;
- Gubin, A. S.;
- Tereshchenko, M. N.;
- Bodnaryuk, A. D.
Publication type:
Article
Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy.
Published in:
Acta Physica Polonica: A, 2019, v. 136, n. 4, p. 608, doi. 10.12693/APhysPolA.136.608
By:
- AVDIENKO, P. S.;
- SOROKIN, S. V.;
- SEDOVA, I. V.;
- KIRILENKO, D. A.;
- SMIRNOV, A. N.;
- ELISEEV, I. A.;
- DAVYDOV, V. YU.;
- IVANOV, S. V.
Publication type:
Article
Local Anodic Oxidation of Graphene Layers on SiC.
Published in:
Technical Physics Letters, 2018, v. 44, n. 5, p. 381, doi. 10.1134/S1063785018050024
By:
- Alekseev, P. A.;
- Borodin, B. R.;
- Dunaevskii, M. S.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Lebedev, S. P.;
- Lebedev, A. A.
Publication type:
Article
Electron-beam modification of the parameters of the insulator-metal phase transition in vanadium dioxide films.
Published in:
Technical Physics Letters, 2013, v. 39, n. 8, p. 705, doi. 10.1134/S1063785013080063
By:
- Il’inskii, A. V.;
- Davydov, V. Yu.;
- Kastro, R. A.;
- Kvashenkina, O. E.;
- Pashkevich, M. E.;
- Shadrin, E. B.
Publication type:
Article
The 'destructive' fermi resonance.
Published in:
Physica Status Solidi (B), 1977, v. 79, n. 1, p. 347, doi. 10.1002/pssb.2220790137
By:
- Chisler, E. V.;
- Davydov, V. Yu.;
- Goncharuk, I. N.;
- Ivanova, E. A.
Publication type:
Article
On fermi resonance theory.
Published in:
Physica Status Solidi (B), 1976, v. 78, n. 1, p. 359, doi. 10.1002/pssb.2220780137
By:
- Chisler, E. V.;
- Davydov, V. Yu.;
- Goncharuk, I. N.;
- Ivanova, E. A.
Publication type:
Article

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