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Spectral characteristics of winter wheat varieties depending on the development degree of Pyrenophora tritici-repentis.
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- Precision Agriculture, 2023, v. 24, n. 3, p. 830, doi. 10.1007/s11119-022-09976-2
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- Article
Development of High-Current Relativistic Gyrotrons with the Operating TM Mode.
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- Radiophysics & Quantum Electronics, 2022, v. 65, n. 5/6, p. 410, doi. 10.1007/s11141-023-10223-5
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- Article
Development of a Generator of a Periodic Sequence of Ultrashort 8-mm Electromagnetic Pulses Based on the "Saturn" Accelerator with Two Coaxial Emitting and Absorbing Electron Beams.
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- Radiophysics & Quantum Electronics, 2022, v. 65, n. 3, p. 196, doi. 10.1007/s11141-023-10205-7
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The Use of Microwave Superradiance Pulses for High-Gradient Acceleration of Electrons in a Cylindrical Waveguide with a Dielectric Insert.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 27, doi. 10.1134/S1063785022020031
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Doping of Carbon Layers Grown by the Pulsed Laser Technique.
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- Semiconductors, 2021, v. 55, n. 8, p. 660, doi. 10.1134/S1063782621080054
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Generation of a Periodic Sequence of Ultrashort Electromagnetic Pulses in a Scheme with Two Parallel Radiating and Absorbing Electron Beams.
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- Technical Physics Letters, 2021, v. 47, n. 2, p. 184, doi. 10.1134/S106378502102022X
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Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures.
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- Semiconductors, 2020, v. 54, n. 12, p. 1598, doi. 10.1134/S1063782620120428
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Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells.
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- Semiconductors, 2020, v. 54, n. 10, p. 1341, doi. 10.1134/S1063782620100061
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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
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A Signal Input Selective Device for a High-Current Relativistic Cherenkov Amplifier.
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- Technical Physics Letters, 2020, v. 46, n. 9, p. 935, doi. 10.1134/S1063785020090175
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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy.
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- Semiconductors, 2020, v. 54, n. 8, p. 956, doi. 10.1134/S106378262008028X
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- Article
Circularly Polarized Electroluminescence of Spin LEDs with a Ferromagnetic (In, Fe)Sb Injector.
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- Technical Physics Letters, 2020, v. 46, n. 7, p. 691, doi. 10.1134/S1063785020070299
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The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures.
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- Optics & Spectroscopy, 2020, v. 128, n. 3, p. 387, doi. 10.1134/S0030400X20030030
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Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 668, doi. 10.1134/S1063785019070149
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Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.
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- Semiconductors, 2019, v. 53, n. 3, p. 332, doi. 10.1134/S1063782619030230
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Study of Extended Electrically Active Defects in Heterostructures Based on (Ga,Mn)As/(In,Ga)As by Electron Beam-Induced Current and Deep-Level Transient Spectroscopy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 1, p. 105, doi. 10.1134/S1027451019010336
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The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.
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- Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106
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Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.
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- Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250
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Features of the selective manganese doping of GaAs structures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
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Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence.
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- Technical Physics, 2017, v. 62, n. 10, p. 1545, doi. 10.1134/S1063784217100085
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Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties.
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- Technical Physics, 2017, v. 62, n. 9, p. 1398, doi. 10.1134/S1063784217090055
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Synthesis of methyl 4-aryl-2-{[4-(carbamimidoylsulfamoyl)- phenyl]amino}-4-oxobut-2-enoates.
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- Russian Journal of Organic Chemistry, 2016, v. 52, n. 12, p. 1762, doi. 10.1134/S1070428016120083
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Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications.
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- Semiconductors, 2016, v. 50, n. 11, p. 1443, doi. 10.1134/S1063782616110087
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Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.
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- Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129
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Study of the structures of cleaved cross sections by Raman spectroscopy.
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- Semiconductors, 2016, v. 50, n. 11, p. 1539, doi. 10.1134/S106378261611021X
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The recovering of breeding achievements of Populus × leningradensis bogd. and Populus × newensis bogd. Based on microsatellite analysis.
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- Russian Journal of Genetics, 2016, v. 52, n. 10, p. 1046, doi. 10.1134/S1022795416100069
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Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer.
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- Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 3, p. 420, doi. 10.1134/S106377611607013X
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Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.
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- Scientific Reports, 2016, p. 24537, doi. 10.1038/srep24537
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GaAs structures with a gate dielectric based on aluminum-oxide layers.
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- Semiconductors, 2016, v. 50, n. 2, p. 204, doi. 10.1134/S106378261602010X
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Nonlinear room-temperature Hall effect in n-InFeAs layers.
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- Technical Physics Letters, 2016, v. 42, n. 1, p. 88, doi. 10.1134/S1063785016010259
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CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1601, doi. 10.1134/S106378261512026X
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Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity.
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- Semiconductors, 2015, v. 49, n. 11, p. 1430, doi. 10.1134/S106378261511010X
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Application of cobalt in spin light-emitting Schottky diodes with InGaAs/GaAs quantum wells.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2015, v. 9, n. 4, p. 706, doi. 10.1134/S1027451015040059
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Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn.
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- Semiconductors, 2015, v. 49, n. 1, p. 99, doi. 10.1134/S1063782615010200
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Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction.
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- Technical Physics, 2014, v. 59, n. 12, p. 1839, doi. 10.1134/S1063784214120056
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The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures.
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- Technical Physics Letters, 2014, v. 40, n. 10, p. 930, doi. 10.1134/S1063785014100290
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Orientation of electron spins in hybrid ferromagnet-semiconductor nanostructures.
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- Physica Status Solidi (B), 2014, v. 251, n. 9, p. 1663, doi. 10.1002/pssb.201350236
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Whispering gallery mode selective reflector with a high azimuthal index for the input cavity of a gyroklystron.
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- Technical Physics, 2014, v. 59, n. 7, p. 1088, doi. 10.1134/S1063784214070081
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Temperature dependence of the circular polarization of electroluminescence from spin-polarized light-emitting diodes based on InGaAs/GaAs heterostructures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 3, p. 433, doi. 10.1134/S1027451014030033
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Photoreflectance of GaAs structures with a Mn δ-doped layer.
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- Technical Physics Letters, 2013, v. 39, n. 11, p. 1008, doi. 10.1134/S1063785013110199
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Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity.
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- Semiconductors, 2012, v. 46, n. 12, p. 1493, doi. 10.1134/S106378261212024X
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GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer.
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- Semiconductors, 2012, v. 46, n. 12, p. 1518, doi. 10.1134/S1063782612120056
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Excitation of a cavity by a microwave pulse transmitted through a nonreflective cavity compressor.
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- Technical Physics, 2012, v. 57, n. 12, p. 1737, doi. 10.1134/S1063784212120079
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A magnetically controlled LED with S-shaped current-voltage characteristic.
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- Technical Physics Letters, 2012, v. 38, n. 11, p. 1045, doi. 10.1134/S1063785012110247
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Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer.
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- Technical Physics Letters, 2012, v. 38, n. 8, p. 764, doi. 10.1134/S1063785012080184
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Passive compression of microwave pulses with a bounded spectrum by a nonreflective cavity.
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- Technical Physics, 2012, v. 57, n. 7, p. 1037, doi. 10.1134/S1063784212070080
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Composition and structural perfection of (A,Mn)B and MnB (A = Ga, In; B = Sb, As, P) nanolayers.
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- Inorganic Materials, 2012, v. 48, n. 6, p. 553, doi. 10.1134/S0020168512050044
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Input cavity for high-order asymmetric-mode gyroklystron.
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- Technical Physics Letters, 2012, v. 38, n. 6, p. 576, doi. 10.1134/S1063785012060211
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Manganese diffusion in ingaas/gaas quantum well structures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 3, p. 508, doi. 10.1134/S1027451012060249
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Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 3, p. 511, doi. 10.1134/S1027451012060079
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