Found: 24
Select item for more details and to access through your institution.
White beam topography of 300 mm Si wafers.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 269, doi. 10.1007/s10854-007-9480-5
- By:
- Publication type:
- Article
Dislocations at the interface between sapphire and GaN.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4
- By:
- Publication type:
- Article
Experimental impact cratering: A summary of the major results of the MEMIN research unit.
- Published in:
- Meteoritics & Planetary Science, 2018, v. 53, n. 8, p. 1543, doi. 10.1111/maps.13048
- By:
- Publication type:
- Article
Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging.
- Published in:
- Journal of Synchrotron Radiation, 2015, v. 22, n. 4, p. 1083, doi. 10.1107/S1600577515009650
- By:
- Publication type:
- Article
Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 11, p. 2499, doi. 10.1002/pssa.201184264
- By:
- Publication type:
- Article
Vacancy Clustering in Dislocation-Free High-Purity Germanium.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5097, doi. 10.1007/s11664-020-08260-1
- By:
- Publication type:
- Article
Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 19, p. 6996, doi. 10.3390/ma15196996
- By:
- Publication type:
- Article
X‐Ray Topography—More than Nice Pictures.
- Published in:
- Crystal Research & Technology, 2020, v. 55, n. 9, p. 1, doi. 10.1002/crat.202000012
- By:
- Publication type:
- Article
Anisotropic Microsegregation in the Growth of Doped III‐V‐Semiconductors from Solution.
- Published in:
- Crystal Research & Technology, 2018, v. 53, n. 5, p. 1, doi. 10.1002/crat.201700264
- By:
- Publication type:
- Article
Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators page 290-298 by Raphaël P. Hermann et al.
- Published in:
- 2016
- By:
- Publication type:
- Other
Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators.
- Published in:
- Crystal Research & Technology, 2016, v. 51, n. 4, p. 290, doi. 10.1002/crat.201500343
- By:
- Publication type:
- Article
Macrosegregation in the growth of doped III-V-semiconductors from the solution.
- Published in:
- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 604
- By:
- Publication type:
- Article
S. M. Mini, S. R. Stock, D. L. Perry, L. J. Terminello (Eds.): Applications of Synchrotron Radiation Techniques to Materials Sciences IV.
- Published in:
- Crystal Research & Technology, 1999, v. 34, n. 7, p. 935, doi. 10.1002/(SICI)1521-4079(199908)34:7<935::AID-CRAT935>3.0.CO;2-O
- By:
- Publication type:
- Article
Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon.
- Published in:
- Crystals (2073-4352), 2017, v. 7, n. 12, p. 347, doi. 10.3390/cryst7110347
- By:
- Publication type:
- Article
Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon.
- Published in:
- Crystals (2073-4352), 2017, v. 7, n. 11, p. 347, doi. 10.3390/cryst7110347
- By:
- Publication type:
- Article
Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals.
- Published in:
- Journal of Applied Crystallography, 2020, v. 53, n. 4, p. 880, doi. 10.1107/S1600576720005993
- By:
- Publication type:
- Article
Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages.
- Published in:
- Journal of Applied Crystallography, 2017, v. 50, n. 2, p. 547, doi. 10.1107/S1600576717003132
- By:
- Publication type:
- Article
X-ray asterism and the structure of cracks from indentations in silicon.
- Published in:
- Journal of Applied Crystallography, 2016, v. 49, n. 1, p. 250, doi. 10.1107/S1600576715024620
- By:
- Publication type:
- Article
Selected 3d-Transition Metals in Gallium Antimonide: Vanadium, Titanium and Iron.
- Published in:
- Crystal Research & Technology, 1997, v. 32, n. 8, p. 1095, doi. 10.1002/crat.2170320812
- By:
- Publication type:
- Article
In situ Observation Setup for Semiconductor Growth Interface from Solution in a Magnetic Field.
- Published in:
- Crystal Research & Technology, 1997, v. 32, n. 6, p. 759, doi. 10.1002/crat.2170320604
- By:
- Publication type:
- Article
Long-term Crystal Growth under Microgravity during the EURECA-1 Mission (II) THM Growth of Sulphur-doped InP.
- Published in:
- Crystal Research & Technology, 1996, v. 31, n. 2, p. 139, doi. 10.1002/crat.2170310202
- By:
- Publication type:
- Article
Long-term Crystal Growth under Microgravity during the EURECA-1 Mission (I) THM Growth of Al.
- Published in:
- Crystal Research & Technology, 1996, v. 31, n. 1, p. 11, doi. 10.1002/crat.2170310104
- By:
- Publication type:
- Article
Growth of GaAs from Ga solution under reduced gravity during the D2-mission.
- Published in:
- Crystal Research & Technology, 1994, v. 29, n. 2, p. 171, doi. 10.1002/crat.2170290204
- By:
- Publication type:
- Article
X-ray imaging of silicon die within fully packaged semiconductor devices.
- Published in:
- Powder Diffraction, 2021, v. 36, n. 2, p. 78, doi. 10.1017/S088571562100021X
- By:
- Publication type:
- Article