Works by Dai, Jiangnan

Results: 31

Unique Multilayer Gradient Design of Al2O3 Doping Phosphor‐In‐Glass Film Enabling High‐Luminance Laser Lighting.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 13, p. 1, doi. 10.1002/lpor.202401991

By:

Li, Zhencheng;
Zhao, Jiuzhou;
Ding, Yongjie;
Zhang, Hongjin;
Chen, Zhenyu;
Wu, Zhenzi;
Wei, Yufan;
Wu, Feng;
Chen, Changqing;
Peng, Yang;
Dai, Jiangnan

Publication type:

Article

Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives.

Published in:

InfoMat, 2023, v. 5, n. 10, p. 1, doi. 10.1002/inf2.12470

By:

Liu, Weijie;
Yu, Yiye;
Peng, Meng;
Zheng, Zhihua;
Jian, Pengcheng;
Wang, Yang;
Zou, Yuanchen;
Zhao, Yongming;
Wang, Fang;
Wu, Feng;
Chen, Changqing;
Dai, Jiangnan;
Wang, Peng;
Hu, Weida

Publication type:

Article

Catalytic anode surface enabling in situ polymerization of gel polymer electrolyte for stable Li metal batteries.

Published in:

Nano Research, 2024, v. 17, n. 6, p. 5216, doi. 10.1007/s12274-024-6463-2

By:

Li, Guocheng;
Liang, Kang;
Li, Yuanjian;
Duan, Xiangrui;
Fu, Lin;
Cai, Zhao;
Zhang, Zhaofu;
Dai, Jiangnan;
Sun, Yongming

Publication type:

Article

Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 217, doi. 10.1007/s11664-014-3462-1

By:

Chen, Shengchang;
Li, Yang;
Ding, Yanyan;
Li, Senlin;
Zhang, Min;
Wu, Zhihao;
Fang, Yanyan;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-25712-2

By:

Zhao, Yongming;
Shan, Maocheng;
Zheng, Zhihua;
Jian, Pengcheng;
Liu, WeiJie;
Tan, Shizhou;
Chen, Changqing;
Wu, Feng;
Dai, Jiangnan

Publication type:

Article

Enhanced Performance of InGaN‐Based Blue LEDs Using an AlGaN/InGaN Super‐Lattice Last Quantum Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 16, p. N.PAG, doi. 10.1002/pssa.201800913

By:

Hu, Jiahui;
Chen, Qian;
Long, Hanling;
Zhang, Shuang;
Gao, Yang;
Zheng, Zihua;
Chen, Changqing;
Zhang, Jun;
Dai, Jiangnan

Publication type:

Article

Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 1, p. 1, doi. 10.1002/pssr.201700346

By:

Tian, Kangkai;
Chen, Qian;
Chu, Chunshuang;
Fang, Mengqian;
Li, Luping;
Zhang, Yonghui;
Bi, Wengang;
Chen, Changqing;
Zhang, Zi‐Hui;
Dai, Jiangnan

Publication type:

Article

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 48, p. N.PAG, doi. 10.1002/adfm.201905445

By:

Sun, Haiding;
Mitra, Somak;
Subedi, Ram Chandra;
Zhang, Yi;
Guo, Wei;
Ye, Jichun;
Shakfa, Mohammad Khaled;
Ng, Tien Khee;
Ooi, Boon S.;
Roqan, Iman S.;
Zhang, Zihui;
Dai, Jiangnan;
Chen, Changqing;
Long, Shibing

Publication type:

Article

Numerical analysis on the effects of multi-quantum last barriers in AlGaN-based ultraviolet light-emitting diodes.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 4, p. 1357, doi. 10.1007/s00339-014-8888-z

By:

Chen, Shengchang;
Li, Yang;
Tian, Wu;
Zhang, Min;
Li, Senlin;
Wu, Zhihao;
Fang, Yanyan;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

NH3-assisted growth approach for ZnO films by atmospheric pressure metal-organic chemical vapor deposition.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 89, n. 3, p. 645, doi. 10.1007/s00339-007-4248-6

By:

Jiangnan Dai;
Fengyi Jiang;
Yong Pu;
Li Wang;
Wenqing Fang;
Fan Li

Publication type:

Article

Investigation of structure and magnetic characteristics of Ni-implanted AlGaN films.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 3, p. 1, doi. 10.1007/s11082-017-0942-6

By:

Zhao, Chong;
Wan, Qixin;
Dai, Jiangnan;
Zhang, Jun;
Wu, Feng;
Wang, Shuai;
Long, Hanling;
Chen, Jingwen;
Chen, Changqing

Publication type:

Article

Enhancement of Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes Using Cooperative Scattering Structures on the n‐AlGaN Layer.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 8, p. 1, doi. 10.1002/lpor.202401926

By:

Chen, Zhenyu;
Zhang, Shuang;
Zhao, Yongming;
Wu, Zhenzi;
Chen, Maohua;
Zeng, Yuhui;
Gao, Zhiwei;
Wei, Yufan;
Li, Zhencheng;
Liang, Zhengang;
Peng, Yang;
Chen, Changqing;
Wu, Feng;
Dai, Jiangnan

Publication type:

Article

High Luminescence Saturation Y3Al5O12: Ce3+‐Diamond Composite Color Converter for High‐Brightness Laser‐Driven White Lighting.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 3, p. 1, doi. 10.1002/lpor.202401124

By:

Yu, Zikang;
Li, Jiayu;
Zhao, Jiuzhou;
Zhang, Hongjin;
Mou, Yun;
Dai, Jiangnan;
Chen, Mingxiang;
Peng, Yang

Publication type:

Article

Conformal Growth of Nano‐Patterned Monolayer MoS2 with Periodic Strain via Patterned Substrate Engineering for High‐performance Photodetectors.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 1, p. 1, doi. 10.1002/lpor.202401012

By:

Jian, Pengcheng;
Chen, Maohua;
Li, Dongyan;
Zhao, Yongming;
Liu, Weijie;
Luo, Yuang;
Tian, Xiantai;
Peng, Meng;
Zhou, Xing;
Dai, Jiangnan;
Wu, Feng;
Chen, Changqing

Publication type:

Article

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1701-5

By:

Chen, Cheng;
Chen, Jingwen;
Zhang, Jun;
Wang, Shuai;
Zhang, Wei;
Liang, Renli;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

A Bias‐Tunable Multispectral Photodetector Based on a GaN/TexSe1‐x Homo‐Type Heterojunction with a Unidirectional Barrier.

Published in:

Advanced Science, 2025, v. 12, n. 17, p. 1, doi. 10.1002/advs.202417428

By:

Liu, Weijie;
Peng, Meng;
Chen, Maohua;
Zhao, Yongming;
Yu, Yiye;
Jian, Pengcheng;
Liu, Zunyu;
Zeng, Yuhui;
Luo, Yuang;
Tian, Xiantai;
Gao, Zhiwei;
Dai, Jiangnan;
Chen, Changqing;
Wu, Feng;
Hu, Weida

Publication type:

Article

Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate.

Published in:

Frontiers of Optoelectronics, 2021, v. 14, n. 4, p. 507, doi. 10.1007/s12200-021-1216-2

By:

Hu, Jiahui;
Wu, Feng;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

Ripening-resistance of Pd on TiO2(110) from first-principles kinetics.

Published in:

Frontiers of Optoelectronics, 2020, v. 13, n. 4, p. 409, doi. 10.1007/s12200-019-0926-1

By:

Wan, Qixin;
Lin, Hao;
Wang, Shuai;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

Diluted magnetic characteristics of Ni-doped AlN films via ion implantation.

Published in:

Frontiers of Optoelectronics, 2017, v. 10, n. 4, p. 363, doi. 10.1007/s12200-017-0728-2

By:

Zhao, Chong;
Wan, Qixin;
Dai, Jiangnan;
Zhang, Jun;
Wu, Feng;
Wang, Shuai;
Long, Hanling;
Chen, Jingwen;
Chen, Cheng;
Chen, Changqing

Publication type:

Article

Building one-dimensional BiS nanorods as enhanced photoresponding materials for photodetectors.

Published in:

Frontiers of Optoelectronics, 2015, v. 8, n. 3, p. 282, doi. 10.1007/s12200-015-0529-4

By:

Ding, Taotao;
Tian, Yu;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

Selective growth and characterization of ZnO nanorods assembled a hexagonal pattern on H2-decomposed GaN epilayer.

Published in:

Frontiers of Optoelectronics, 2013, v. 6, n. 4, p. 440, doi. 10.1007/s12200-013-0350-x

By:

Tian, Yu;
Chen, Huiquan;
Zhu, Xiaolong;
Zheng, Guang;
Dai, Jiangnan

Publication type:

Article

Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers.

Published in:

Frontiers of Optoelectronics, 2013, v. 6, n. 4, p. 429, doi. 10.1007/s12200-013-0342-x

By:

Tian, Wu;
Hui, Xiong;
Li, Yang;
Dai, Jiangnan;
Fang, Yanyan;
Wu, Zhihao;
Chen, Changqing

Publication type:

Article

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer.

Published in:

Nanoscale Research Letters, 2019, v. 14, n. 1, p. N.PAG, doi. 10.1186/s11671-019-3201-x

By:

Hu, Jiahui;
Zhang, Jun;
Zhang, Yi;
Zhang, Huixue;
Long, Hanling;
Chen, Qian;
Shan, Maocheng;
Du, Shida;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

A Novel Sapphire@PiGF@Sapphire Color Converter with High Luminescence Saturation Threshold for Laser Lighting.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 4, p. 1, doi. 10.1002/adfm.202414023

By:

Zhang, Hongjin;
Zhao, Jiuzhou;
Yu, Zikang;
Xu, Zhirui;
Lin, Shisheng;
Peng, Yang;
Dai, Jiangnan;
Chen, Daqin

Publication type:

Article

Large-scale synthesis and exciton dynamics of monolayer MoS2 on differently doped GaN substrates.

Published in:

Nanophotonics (21928606), 2023, v. 12, n. 24, p. 4475, doi. 10.1515/nanoph-2023-0503

By:

Jian, Pengcheng;
Cai, Xueqing;
Zhao, Yongming;
Li, Dongyan;
Zhang, Zheng;
Liu, Weijie;
Xu, Dan;
Liang, Wenxi;
Zhou, Xing;
Dai, Jiangnan;
Wu, Feng;
Chen, Changqing

Publication type:

Article

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-341

By:

Zhang, Jin;
Li, Senlin;
Xiong, Hui;
Tian, Wu;
Li, Yang;
Fang, Yanyan;
Wu, Zhihao;
Dai, Jiangnan;
Xu, Jintong;
Li, Xiangyang;
Chen, Changqing

Publication type:

Article

Gate‐Tunable Spectral Response in β‐Ga2O3/Te Hybrid Photogating Structure for Ultrasensitive Broadband Detection.

Published in:

Advanced Optical Materials, 2024, v. 12, n. 13, p. 1, doi. 10.1002/adom.202302746

By:

Liu, Weijie;
Peng, Meng;
Yu, Yiye;
Zheng, Zhihua;
Jian, Pengcheng;
Zhao, Yongming;
Zeng, Yuhui;
Xu, Dan;
Chen, Maohua;
Luo, Yuang;
Chen, Changqing;
Dai, Jiangnan;
Wu, Feng

Publication type:

Article

Hot Exciton Emission: Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells (Advanced Optical Materials 5/2014).

Published in:

Advanced Optical Materials, 2014, v. 2, n. 5, p. 450, doi. 10.1002/adom.201470031

By:

Yin, Jun;
Li, Yang;
Chen, Shengchang;
Li, Jing;
Kang, Junyong;
Li, Wei;
Jin, Peng;
Chen, Yonghai;
Wu, Zhihao;
Dai, Jiangnan;
Fang, Yanyan;
Chen, Changqing

Publication type:

Article

Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells.

Published in:

Advanced Optical Materials, 2014, v. 2, n. 5, p. 451, doi. 10.1002/adom.201300463

By:

Yin, Jun;
Li, Yang;
Chen, Shengchang;
Li, Jing;
Kang, Junyong;
Li, Wei;
Jin, Peng;
Chen, Yonghai;
Wu, Zhihao;
Dai, Jiangnan;
Fang, Yanyan;
Chen, Changqing

Publication type:

Article

Tellurium/Bismuth Selenide van der Waals Heterojunction for Self‐Driven, Broadband Photodetection and Polarization‐Sensitive Application.

Published in:

Small, 2025, v. 21, n. 6, p. 1, doi. 10.1002/smll.202407830

By:

Yu, Yiye;
Zhao, Tiange;
Peng, Meng;
Xu, Tengfei;
Duan, Shikun;
She, Yihong;
Jian, Pengcheng;
Chen, Maohua;
Chen, Yue;
Wang, Zhen;
Wu, Feng;
Martyniuk, Piotr;
Tsang, Yuen Hong;
Yao, Bimu;
Zeng, Longhui;
Dai, Jiangnan;
Chen, Changqing;
Hu, Weida

Publication type:

Article

Origin of Water‐Stable CsPbX3 Quantum Dots Assisted by Zwitterionic Ligands and Sequential Strategies for Enhanced Luminescence Based on Crystal Evolution.

Published in:

Small, 2024, v. 20, n. 12, p. 1, doi. 10.1002/smll.202307042

By:

Yin, Junyang;
Zhang, Jie;
Wu, Zhenzi;
Wu, Feng;
Li, Xiong;
Dai, Jiangnan;
Chen, Changqing

Publication type:

Article

Works by Dai, Jiangnan

Unique Multilayer Gradient Design of Al<sub>2</sub>O<sub>3</sub> Doping Phosphor‐In‐Glass Film Enabling High‐Luminance Laser Lighting.

Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives.

Catalytic anode surface enabling in situ polymerization of gel polymer electrolyte for stable Li metal batteries.

Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers.

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching.

Enhanced Performance of InGaN‐Based Blue LEDs Using an AlGaN/InGaN Super‐Lattice Last Quantum Barrier.

Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations.

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate.

Numerical analysis on the effects of multi-quantum last barriers in AlGaN-based ultraviolet light-emitting diodes.

NH<sub>3</sub>-assisted growth approach for ZnO films by atmospheric pressure metal-organic chemical vapor deposition.

Investigation of structure and magnetic characteristics of Ni-implanted AlGaN films.

Enhancement of Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes Using Cooperative Scattering Structures on the n‐AlGaN Layer.

High Luminescence Saturation Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub>: Ce<sup>3+</sup>‐Diamond Composite Color Converter for High‐Brightness Laser‐Driven White Lighting.

Conformal Growth of Nano‐Patterned Monolayer MoS<sub>2</sub> with Periodic Strain via Patterned Substrate Engineering for High‐performance Photodetectors.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

A Bias‐Tunable Multispectral Photodetector Based on a GaN/Te<sub>x</sub>Se<sub>1‐</sub><sub>x</sub> Homo‐Type Heterojunction with a Unidirectional Barrier.

Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate.

Ripening-resistance of Pd on TiO2(110) from first-principles kinetics.

Diluted magnetic characteristics of Ni-doped AlN films via ion implantation.

Building one-dimensional BiS nanorods as enhanced photoresponding materials for photodetectors.

Selective growth and characterization of ZnO nanorods assembled a hexagonal pattern on H<sub>2</sub>-decomposed GaN epilayer.

Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers.

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer.

A Novel Sapphire@PiGF@Sapphire Color Converter with High Luminescence Saturation Threshold for Laser Lighting.

Large-scale synthesis and exciton dynamics of monolayer MoS<sub>2</sub> on differently doped GaN substrates.

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

Gate‐Tunable Spectral Response in β‐Ga<sub>2</sub>O<sub>3</sub>/Te Hybrid Photogating Structure for Ultrasensitive Broadband Detection.

Hot Exciton Emission: Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells (Advanced Optical Materials 5/2014).

Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells.

Tellurium/Bismuth Selenide van der Waals Heterojunction for Self‐Driven, Broadband Photodetection and Polarization‐Sensitive Application.

Origin of Water‐Stable CsPbX<sub>3</sub> Quantum Dots Assisted by Zwitterionic Ligands and Sequential Strategies for Enhanced Luminescence Based on Crystal Evolution.