Found: 11
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Tilt of InGaN layers on miscut GaN substrates.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 142
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- Article
Gain mechanisms in field-free InGaN layers grown on sapphire and bulk GaN substrate.
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- Physica Status Solidi - Rapid Research Letters, 2007, v. 1, n. 4, p. 141, doi. 10.1002/pssr.200701037
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- Article
A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations.
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- Acta Physica Polonica: A, 2016, v. 130, n. 5, p. 1209, doi. 10.12693/APhysPolA.130.1209
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- Article
Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 660, doi. 10.12693/APhysPolA.119.660
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- Article
Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 669, doi. 10.12693/APhysPolA.119.669
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- Article
Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600710
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- Article
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 476, doi. 10.1002/pssb.201100392
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- Article
Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 32, doi. 10.1002/pssb.200672503
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- Article
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure.
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- Physica Status Solidi (B), 2004, v. 241, n. 14, p. 3285, doi. 10.1002/pssb.200405208
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- Article
New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.
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- Journal of Microscopy, 2009, v. 236, n. 2, p. 137, doi. 10.1111/j.1365-2818.2009.03285.x
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- Article
Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers.
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- Crystal Research & Technology, 2012, v. 47, n. 3, p. 321, doi. 10.1002/crat.201100491
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- Article