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Properties of Z 1 and Z 2 Deep-Level Defects in n -Type Epitaxial and High-Purity Semi-Insulating 4 H -SiC.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 6, p. 536, doi. 10.3390/cryst14060536
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- Article
The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions.
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- Sensors (14248220), 2022, v. 22, n. 14, p. N.PAG, doi. 10.3390/s22145258
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- Article
Homoepitaksja węglika krzemu dla przyrządów mocy w Sieci Badawczej Łukasiewicz - ITME.
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- Przeglad Elektrotechniczny, 2019, v. 95, n. 9, p. 154, doi. 10.15199/48.2019.09.32
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- Article
Termiczne formowanie tytanowych kontaktów omowych do węglika krzemu 4H-SiC.
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- Przeglad Elektrotechniczny, 2019, v. 95, n. 9, p. 172, doi. 10.15199/48.2019.09.37
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- Article
Graphene's nonlinear-optical physics revealed through exponentially growing self-phase modulation.
- Published in:
- Nature Communications, 2018, v. 9, p. 1, doi. 10.1038/s41467-018-05081-z
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- Article