Found: 143
Select item for more details and to access through your institution.
On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 2, p. 408, doi. 10.1134/S1027451024020289
- By:
- Publication type:
- Article
Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S364, doi. 10.1134/S106378502390073X
- By:
- Publication type:
- Article
Erratum to: Refractive Index Spectra of Mononucleotide Films on Silicon in the Terahertz Range.
- Published in:
- 2022
- By:
- Publication type:
- Correction Notice
Complex Refractive of the Spectra Index of Mononucleotide Films on Silicon in the Terahertz Range.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 12, p. 862, doi. 10.1134/S106378502109008X
- By:
- Publication type:
- Article
Specific Features of Structural Stresses in InGaN/GaN Nanowires.
- Published in:
- Semiconductors, 2021, v. 55, n. 10, p. 795, doi. 10.1134/S1063782621090207
- By:
- Publication type:
- Article
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.
- Published in:
- Semiconductors, 2021, v. 55, n. 8, p. 678, doi. 10.1134/S1063782621080108
- By:
- Publication type:
- Article
Directional Radiation from GaAs quantum dots in AlGaAs nanowires.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 5, p. 405, doi. 10.1134/S106378502104026X
- By:
- Publication type:
- Article
Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 11, p. 1080, doi. 10.1134/S1063785020110061
- By:
- Publication type:
- Article
Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties.
- Published in:
- Semiconductors, 2020, v. 54, n. 9, p. 1075, doi. 10.1134/S1063782620090237
- By:
- Publication type:
- Article
Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.
- Published in:
- Semiconductors, 2020, v. 54, n. 9, p. 1092, doi. 10.1134/S1063782620090298
- By:
- Publication type:
- Article
Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.
- Published in:
- Semiconductors, 2020, v. 54, n. 9, p. 1141, doi. 10.1134/S1063782620090158
- By:
- Publication type:
- Article
MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.
- Published in:
- Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056
- By:
- Publication type:
- Article
Wurtzite AlGaAs Nanowires.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-57563-0
- By:
- Publication type:
- Article
The Role of Physical Models in the Description of Luminescence Kinetics of Hybrid Nanowires.
- Published in:
- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 119, doi. 10.1134/S0030400X20010129
- By:
- Publication type:
- Article
Nonlinear Bleaching of InAs Nanowires in the Visible Range.
- Published in:
- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 125, doi. 10.1134/S0030400X20010130
- By:
- Publication type:
- Article
Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate.
- Published in:
- Technical Physics Letters, 2019, v. 45, n. 11, p. 1111, doi. 10.1134/S1063785019110129
- By:
- Publication type:
- Article
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.
- Published in:
- Semiconductors, 2019, v. 53, n. 9, p. 1258, doi. 10.1134/S1063782619090082
- By:
- Publication type:
- Article
The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires.
- Published in:
- Technical Physics Letters, 2019, v. 45, n. 8, p. 835, doi. 10.1134/S1063785019080212
- By:
- Publication type:
- Article
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2088, doi. 10.1134/S1063782618160054
- By:
- Publication type:
- Article
Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X
- By:
- Publication type:
- Article
Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285
- By:
- Publication type:
- Article
Effect of the Conductive Channel Cut-Off on Operation of n<sup>+</sup>-n-n<sup>+</sup> GaN NW-Based Gunn Diode.
- Published in:
- Semiconductors, 2018, v. 52, n. 14, p. 1809, doi. 10.1134/S106378261814021X
- By:
- Publication type:
- Article
Electromechanical Switch Based on In<sub>x</sub>Ga<sub>1 -</sub><sub>x</sub>As Nanowires.
- Published in:
- Semiconductors, 2018, v. 52, n. 14, p. 1833, doi. 10.1134/S1063782618140026
- By:
- Publication type:
- Article
Solar Cell Based on Core/Shell Nanowires.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229
- By:
- Publication type:
- Article
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
- By:
- Publication type:
- Article
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.
- Published in:
- Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258
- By:
- Publication type:
- Article
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.
- Published in:
- Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210
- By:
- Publication type:
- Article
MBE Growth and Optical Properties of GaN, InN, and A<sup>3</sup> B<sup>5</sup> Nanowires on SiC/Si(111) Hybrid Substrate.
- Published in:
- Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/1040689
- By:
- Publication type:
- Article
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
- Published in:
- Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299
- By:
- Publication type:
- Article
The Features of GaAs Nanowire SEM Images.
- Published in:
- Semiconductors, 2018, v. 52, n. 5, p. 605, doi. 10.1134/S1063782618050317
- By:
- Publication type:
- Article
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells.
- Published in:
- Semiconductors, 2018, v. 52, n. 5, p. 609, doi. 10.1134/S1063782618050020
- By:
- Publication type:
- Article
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.
- Published in:
- Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251
- By:
- Publication type:
- Article
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.
- Published in:
- Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103
- By:
- Publication type:
- Article
Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential.
- Published in:
- Semiconductors, 2018, v. 52, n. 4, p. 489, doi. 10.1134/S1063782618040231
- By:
- Publication type:
- Article
Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 2, p. 112, doi. 10.1134/S1063785018020116
- By:
- Publication type:
- Article
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
- By:
- Publication type:
- Article
Ultrafast Dynamics of Photoinduced Electron-Hole Plasma in Semiconductor Nanowires.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 19, doi. 10.1134/S1063782618010244
- By:
- Publication type:
- Article
MBE growth of ultrathin III-V nanowires on a highly mismatched SiC/Si(111) substrate.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1472, doi. 10.1134/S1063782617110252
- By:
- Publication type:
- Article
Directional emission from beryllium doped GaAs/AlGaAs nanowires.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 9, p. 811, doi. 10.1134/S1063785017090085
- By:
- Publication type:
- Article
Thermal Penetration of Gold Nanoparticles into Silicon Dioxide.
- Published in:
- Acta Physica Polonica: A, 2017, v. 132, n. 2, p. 366, doi. 10.12693/APhysPolA.132.366
- By:
- Publication type:
- Article
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 514, doi. 10.1134/S106378261704008X
- By:
- Publication type:
- Article
Terahertz radiation generation in multilayer quantum-cascade heterostructures.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 4, p. 362, doi. 10.1134/S1063785017040083
- By:
- Publication type:
- Article
Resonant features of the terahertz generation in semiconductor nanowires.
- Published in:
- Semiconductors, 2016, v. 50, n. 12, p. 1561, doi. 10.1134/S1063782616120241
- By:
- Publication type:
- Article
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
- Published in:
- Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
- By:
- Publication type:
- Article
Polarization of the photoluminescence of quantum dots incorporated into quantum wires.
- Published in:
- Semiconductors, 2016, v. 50, n. 12, p. 1647, doi. 10.1134/S1063782616120150
- By:
- Publication type:
- Article
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
- By:
- Publication type:
- Article
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1521, doi. 10.1134/S1063782616110191
- By:
- Publication type:
- Article
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1377, doi. 10.1134/S1063782616100134
- By:
- Publication type:
- Article
Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy.
- Published in:
- Optics & Spectroscopy, 2016, v. 120, n. 5, p. 751, doi. 10.1134/S0030400X16050076
- By:
- Publication type:
- Article
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 662, doi. 10.1134/S1063782616050262
- By:
- Publication type:
- Article