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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE.
- Published in:
- Materials (1996-1944), 2019, v. 12, n. 15, p. 2455, doi. 10.3390/ma12152455
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- Article
Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching (Phys. Status Solidi B 8/2017).
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770241
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- Publication type:
- Article
Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600774
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- Publication type:
- Article