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The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300752
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- Publication type:
- Article
Enhanced Spin Current in Ni<sub>81</sub>Fe<sub>19</sub>/Cu–CuO<sub>x</sub> Bilayer with Top and Sideways Oxidization.
- Published in:
- Advanced Materials, 2023, v. 35, n. 14, p. 1, doi. 10.1002/adma.202207988
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- Publication type:
- Article
Enhanced Spin Current in Ni<sub>81</sub>Fe<sub>19</sub>/Cu–CuO<sub>x</sub> Bilayer with Top and Sideways Oxidization.
- Published in:
- Advanced Materials, 2023, v. 35, n. 14, p. 1, doi. 10.1002/adma.202207988
- By:
- Publication type:
- Article
Gate‐Tunable Anisotropic Oxygen Ion Migration in SrCoO<sub>x</sub>: Toward Emerging Oxide‐Based Artificial Synapses.
- Published in:
- Advanced Intelligent Systems (2640-4567), 2023, v. 5, n. 3, p. 1, doi. 10.1002/aisy.202200287
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- Article