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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 5, p. 2379, doi. 10.1007/s10854-014-1891-5
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- Article
Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 286, doi. 10.1007/s10854-010-0129-4
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- Article
Surface passivation of semiconducting oxides by self-assembled nanoparticles.
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- Scientific Reports, 2016, p. 18449, doi. 10.1038/srep18449
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- Article
Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.
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- Scientific Reports, 2015, p. 16612, doi. 10.1038/srep16612
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- Article
Analysis of microstructure, chemical state and electrical features of Ti/WO<sub>3</sub>/p-InP heterojunction with a tungsten oxide insulating layer.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 19, p. 1, doi. 10.1007/s10854-023-10893-x
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- Article
Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 8092, doi. 10.1007/s10854-021-05532-2
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- Article
Effect of rare-earth Pr<sub>6</sub>O<sub>11</sub> insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18710, doi. 10.1007/s10854-019-02224-w
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- Article
Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.
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- Nature Communications, 2013, v. 4, n. 2, p. 1452, doi. 10.1038/ncomms2448
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- Article
Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge 1−x Sn x Epilayer Grown on Si Substrate.
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- Crystals (2073-4352), 2024, v. 14, n. 2, p. 134, doi. 10.3390/cryst14020134
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- Article
2D Single-Crystalline Copper Nanoplates as a Conductive Filler for Electronic Ink Applications.
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- Small, 2018, v. 14, n. 8, p. 1, doi. 10.1002/smll.201703312
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- Article
Microstructural, wetting, and dielectric properties of plasma polymerized polypyrrole thin films.
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- Journal of Applied Polymer Science, 2016, v. 133, n. 38, p. n/a, doi. 10.1002/app.43982
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- Article
Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates.
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- Electronics (2079-9292), 2023, v. 12, n. 4, p. 1049, doi. 10.3390/electronics12041049
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- Article
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation.
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- Electronics (2079-9292), 2021, v. 10, n. 21, p. 2642, doi. 10.3390/electronics10212642
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- Article
Enhanced photoelectrochemical response of CdSe quantum dot-sensitized p-type NiO photocathodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 8, p. 1868, doi. 10.1002/pssa.201330601
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- Article
Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 105, doi. 10.1002/pssa.201127394
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- Article
STRUCTURAL AND ELECTRICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS.
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- International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 749, doi. 10.1142/S0219581X11008952
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- Article
Erratum to: Growth of silicon nanowires in aqueous solution under atmospheric pressure.
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- 2014
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- Erratum
Growth of silicon nanowires in aqueous solution under atmospheric pressure.
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- Nano Research, 2014, v. 7, n. 6, p. 898, doi. 10.1007/s12274-014-0451-x
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- Article
Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3.
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- Journal of Electronic Materials, 2020, v. 49, n. 1, p. 297, doi. 10.1007/s11664-019-07728-z
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- Article
Structural, Chemical and Electrical Properties of Au/La<sub>2</sub>O<sub>3</sub>/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer.
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- Journal of Electronic Materials, 2019, v. 48, n. 7, p. 4217, doi. 10.1007/s11664-019-07193-8
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- Article
Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/ p-GaN Schottky Diode.
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- Journal of Electronic Materials, 2016, v. 45, n. 7, p. 3268, doi. 10.1007/s11664-016-4490-9
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- Article
Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.
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- Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y
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- Article
Electrical Properties and Current Transport Mechanisms of the Au/ n-GaN Schottky Structure with Solution- Processed High- k BaTiO Interlayer.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3499, doi. 10.1007/s11664-014-3177-3
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- Article
Effects of the Physical Properties of Bismate Frits on Contact Formation Between Ag Electrodes and Si Emitter in Si Solar Cells.
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- Journal of Electronic Materials, 2013, v. 42, n. 4, p. 639, doi. 10.1007/s11664-012-2467-x
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- Article
Anomalous Optoelectric Properties of an Ultrathin Ruthenium Film with a Surface Oxide Layer for Flexible Transparent Conducting Electrodes.
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- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202109330
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- Article
Investigation of Al back contacts and BSF formation by in situ TEM for silicon solar cells.
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- Progress in Photovoltaics, 2014, v. 22, n. 8, p. 863, doi. 10.1002/pip.2322
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- Article
Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 167, doi. 10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G
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- Article
Effects of the flow rate of O<sub>2</sub> annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen-printed phosphorus diffusion process.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 11/12, p. 1440, doi. 10.1002/sia.4970
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- Article
Microstructural and chemical properties of Cu-In alloys formed using co-electrodeposition.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 11/12, p. 1418, doi. 10.1002/sia.4960
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- Article
Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 11/12, p. 1436, doi. 10.1002/sia.4969
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- Article
Electrical and structural properties of Pd/V/ n-type InP (111) Schottky structure as a function of annealing temperature.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 1, p. 98, doi. 10.1002/sia.3778
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- Article
Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n-type GaN.
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- Surface & Interface Analysis: SIA, 2011, v. 43, n. 9, p. 1251, doi. 10.1002/sia.3706
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- Article
Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures.
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- Advanced Materials, 2010, v. 22, n. 44, p. 5058, doi. 10.1002/adma.201001572
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- Article
Concurrent Thermal Reduction and Boron-Doped Graphene Oxide by Metal–Organic Chemical Vapor Deposition for Ultraviolet Sensing Application.
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- Applied Nano, 2024, v. 5, n. 1, p. 1, doi. 10.3390/applnano5010001
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- Article
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 10, p. 1, doi. 10.1007/s00339-021-04945-4
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- Article
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1511-3
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- Article
Controlled Electronic and Magnetic Landscape in Self‐Assembled Complex Oxide Heterostructures.
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- Advanced Materials, 2023, v. 35, n. 32, p. 1, doi. 10.1002/adma.202300200
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- Article
Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping.
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- Advanced Materials, 2018, v. 30, n. 39, p. 1, doi. 10.1002/adma.201802025
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- Article
Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure.
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- Advanced Materials Interfaces, 2023, v. 10, n. 12, p. 1, doi. 10.1002/admi.202202379
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- Article