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Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices.
- Published in:
- Advanced Functional Materials, 2011, v. 21, n. 20, p. 3976, doi. 10.1002/adfm.201101210
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- Publication type:
- Article
Correction: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures.
- Published in:
- Advanced Functional Materials, 2011, v. 21, n. 18, p. 3406, doi. 10.1002/adfm.201190079
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- Publication type:
- Article
Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures.
- Published in:
- Advanced Functional Materials, 2011, v. 21, n. 15, p. 2806, doi. 10.1002/adfm.201100686
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- Publication type:
- Article
Memory Devices: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures (Adv. Funct. Mater. 15/2011).
- Published in:
- Advanced Functional Materials, 2011, v. 21, n. 15, p. 2797, doi. 10.1002/adfm.201190059
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- Publication type:
- Article
Power Allocation in the TVWhite Space under Constraint on Secondary System Self-Interference.
- Published in:
- Journal of Electrical & Computer Engineering, 2012, p. 1, doi. 10.1155/2012/245895
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- Publication type:
- Article
Self‐Formed Channel Devices Based on Vertically Grown 2D Materials with Large‐Surface‐Area and Their Potential for Chemical Sensor Applications.
- Published in:
- Small, 2018, v. 14, n. 15, p. 1, doi. 10.1002/smll.201704116
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- Publication type:
- Article
Photonics: Enhanced Performance of MoS<sub>2</sub> Photodetectors by Inserting an ALD‐Processed TiO<sub>2</sub> Interlayer (Small 5/2018).
- Published in:
- Small, 2018, v. 14, n. 5, p. 1, doi. 10.1002/smll.201870022
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- Publication type:
- Article
Enhanced Performance of MoS<sub>2</sub> Photodetectors by Inserting an ALD‐Processed TiO<sub>2</sub> Interlayer.
- Published in:
- Small, 2018, v. 14, n. 5, p. 1, doi. 10.1002/smll.201703176
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- Publication type:
- Article
Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules.
- Published in:
- Small, 2013, v. 9, n. 13, p. 2283, doi. 10.1002/smll.201202593
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- Publication type:
- Article
Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021).
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202104174
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- Publication type:
- Article
Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202104174
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- Publication type:
- Article
Comparative Analysis of Hg 2 Br 2 and Hg 2 Br x Cl 2-x Crystals Grown via PVT.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 12, p. 1096, doi. 10.3390/cryst10121096
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- Publication type:
- Article
Performance of Secondary Wireless Networks with Contention Control in TV White Spaces.
- Published in:
- Mobile Networks & Applications, 2014, v. 19, n. 4, p. 467, doi. 10.1007/s11036-014-0508-9
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- Publication type:
- Article
Photo‐Assisted Ferroelectric Domain Control for α‐In<sub>2</sub>Se<sub>3</sub> Artificial Synapses Inspired by Spontaneous Internal Electric Fields (Small 22/2024).
- Published in:
- Small, 2024, v. 20, n. 22, p. 1, doi. 10.1002/smll.202307346
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- Publication type:
- Article
Photo‐Assisted Ferroelectric Domain Control for α‐In<sub>2</sub>Se<sub>3</sub> Artificial Synapses Inspired by Spontaneous Internal Electric Fields.
- Published in:
- Small, 2024, v. 20, n. 22, p. 1, doi. 10.1002/smll.202307346
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- Publication type:
- Article
Flexible molecular-scale electronic devices.
- Published in:
- Nature Nanotechnology, 2012, v. 7, n. 7, p. 438, doi. 10.1038/nnano.2012.81
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- Publication type:
- Article
Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device.
- Published in:
- Advanced Materials, 2012, v. 24, n. 3, p. 385, doi. 10.1002/adma.201103862
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- Publication type:
- Article
Memory Devices: Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device (Adv. Mater. 3/2012).
- Published in:
- Advanced Materials, 2012, v. 24, n. 3, p. 322, doi. 10.1002/adma.201290012
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- Publication type:
- Article
Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method.
- Published in:
- Advanced Materials, 2011, v. 23, n. 18, p. 2104, doi. 10.1002/adma.201100081
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- Publication type:
- Article
Organic Memory: Three-Dimensional Integration of Organic Resistive Memory Devices (Adv. Mater. 44/2010).
- Published in:
- Advanced Materials, 2010, v. 22, n. 44, p. 4915, doi. 10.1002/adma.201090142
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- Publication type:
- Article
Three-Dimensional Integration of Organic Resistive Memory Devices.
- Published in:
- Advanced Materials, 2010, v. 22, n. 44, p. 5048, doi. 10.1002/adma.201002575
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- Publication type:
- Article
Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate.
- Published in:
- Advanced Materials, 2010, v. 22, n. 28, p. 3071, doi. 10.1002/adma.200904441
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- Publication type:
- Article
Organic Memory: Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices (Adv. Mater. 11/2010).
- Published in:
- Advanced Materials, 2010, v. 22, n. 11, p. n/a, doi. 10.1002/adma.201090032
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- Publication type:
- Article
Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices.
- Published in:
- Advanced Materials, 2010, v. 22, n. 11, p. 1228, doi. 10.1002/adma.200903203
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- Publication type:
- Article
Comparative Study of Multi‐objective Bayesian Optimization and NSGA‐III based Approaches for Injection Molding Process.
- Published in:
- Advanced Theory & Simulations, 2024, v. 7, n. 7, p. 1, doi. 10.1002/adts.202400135
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- Publication type:
- Article
Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates.
- Published in:
- Sensors (14248220), 2015, v. 15, n. 10, p. 24903, doi. 10.3390/s151024903
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- Publication type:
- Article
Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric.
- Published in:
- Journal of Nanomaterials, 2018, p. 1, doi. 10.1155/2018/2156895
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- Publication type:
- Article
Application of Vibration Signal Processing Methods to Detect and Diagnose Wheel Flats in Railway Vehicles.
- Published in:
- Applied Sciences (2076-3417), 2021, v. 11, n. 5, p. 2151, doi. 10.3390/app11052151
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- Publication type:
- Article
Unveiling the Role of Al<sub>2</sub>O<sub>3</sub> Interlayer in Indium–Gallium–Zinc–Oxide Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 6, p. 1, doi. 10.1002/pssa.202000621
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- Publication type:
- Article
Flexible Gas Sensors: Room‐Temperature Solid‐State Grown WO<sub>3−δ</sub> Film on Plastic Substrate for Extremely Sensitive Flexible NO<sub>2</sub> Gas Sensors (Adv. Mater. Interfaces 1/2018).
- Published in:
- Advanced Materials Interfaces, 2018, v. 5, n. 1, p. 1, doi. 10.1002/admi.201870001
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- Publication type:
- Article
Room‐Temperature Solid‐State Grown WO<sub>3−δ</sub> Film on Plastic Substrate for Extremely Sensitive Flexible NO<sub>2</sub> Gas Sensors.
- Published in:
- Advanced Materials Interfaces, 2018, v. 5, n. 1, p. 1, doi. 10.1002/admi.201700811
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- Publication type:
- Article
Improved electrical performance of a sol–gel IGZO transistor with high-k Al<sub>2</sub>O<sub>3</sub> gate dielectric achieved by post annealing.
- Published in:
- Nano Convergence, 2019, v. 6, n. 1, p. N.PAG, doi. 10.1186/s40580-019-0194-1
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- Publication type:
- Article
Charge-transfer-based Gas Sensing Using Atomic-layer MoS<sub>2</sub>.
- Published in:
- Scientific Reports, 2015, p. 8052, doi. 10.1038/srep08052
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- Publication type:
- Article
Ultrasmooth, extremely deformable and shape recoverable Ag nanowire embedded transparent electrode.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04788
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- Publication type:
- Article
Optimization of injection molding process using multi-objective bayesian optimization and constrained generative inverse design networks.
- Published in:
- Journal of Intelligent Manufacturing, 2023, v. 34, n. 8, p. 3623, doi. 10.1007/s10845-022-02018-8
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- Publication type:
- Article
In-depth Investigation of Hg2Br2 Crystal Growth and Evolution.
- Published in:
- Materials (1996-1944), 2019, v. 12, n. 24, p. 4224, doi. 10.3390/ma12244224
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- Publication type:
- Article
Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901072
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- Publication type:
- Article
Novel Exfoliation of High-Quality 2H-MoS2 Nanoflakes for Solution-Processed Photodetector.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 6, p. 1045, doi. 10.3390/nano10061045
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- Article
Preparation and Properties of 2D Materials.
- Published in:
- 2020
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- Publication type:
- Editorial
Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 1, p. 88, doi. 10.3390/nano10010088
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- Publication type:
- Article
Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer.
- Published in:
- Nanomaterials (2079-4991), 2019, v. 9, n. 8, p. 1155, doi. 10.3390/nano9081155
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- Publication type:
- Article