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Depth profiles and concentration percentages of SiO<sub>2</sub> and SiO<sub> x </sub> induced by ion bombardment of a silicon (100) target.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 898, doi. 10.1007/s10854-008-9658-5
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- Article