Works by Cheol Seong Hwang

Results: 168

Self-Limited Switching in Ta2O5/TaO x Memristors Exhibiting Uniform Multilevel Changes in Resistance.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 10, p. 1527, doi. 10.1002/adfm.201403621

By:

Kim, Kyung Min;
Lee, Seung Ryul;
Kim, Sungho;
Chang, Man;
Hwang, Cheol Seong

Publication type:

Article

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 34, p. 5316, doi. 10.1002/adfm.201303520

By:

Seok, Jun Yeong;
Song, Seul Ji;
Yoon, Jung Ho;
Yoon, Kyung Jean;
Park, Tae Hyung;
Kwon, Dae Eun;
Lim, Hyungkwang;
Kim, Gun Hwan;
Jeong, Doo Seok;
Hwang, Cheol Seong

Publication type:

Article

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 32, p. 5086, doi. 10.1002/adfm.201400064

By:

Yoon, Jung Ho;
Song, Seul Ji;
Yoo, Il‐Hyuk;
Seok, Jun Yeong;
Yoon, Kyung Jean;
Kwon, Dae Eun;
Park, Tae Hyung;
Hwang, Cheol Seong

Publication type:

Article

Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013).

Published in:

Advanced Functional Materials, 2013, v. 23, n. 11, p. 1350, doi. 10.1002/adfm.201370054

By:

Kim, Gun Hwan;
Lee, Jong Ho;
Ahn, Youngbae;
Jeon, Woojin;
Song, Seul Ji;
Seok, Jun Yeong;
Yoon, Jung Ho;
Yoon, Kyung Jean;
Park, Tae Joo;
Hwang, Cheol Seong

Publication type:

Article

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 11, p. 1440, doi. 10.1002/adfm.201202170

By:

Kim, Gun Hwan;
Lee, Jong Ho;
Ahn, Youngbae;
Jeon, Woojin;
Song, Seul Ji;
Seok, Jun Yeong;
Yoon, Jung Ho;
Yoon, Kyung Jean;
Park, Tae Joo;
Hwang, Cheol Seong

Publication type:

Article

Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments.

Published in:

Advanced Functional Materials, 2012, v. 22, n. 1, p. 192, doi. 10.1002/adfm.201101521

By:

Jiang, An Quan;
Lee, Hyun Ju;
Hwang, Cheol Seong;
Scott, James F.

Publication type:

Article

Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage.

Published in:

Advanced Functional Materials, 2011, v. 21, n. 22, p. 4305, doi. 10.1002/adfm.201101073

By:

Park, Min Hyuk;
Lee, Hyun Ju;
Kim, Gun Hwan;
Kim, Yu Jin;
Kim, Jeong Hwan;
Lee, Jong Ho;
Hwang, Cheol Seong

Publication type:

Article

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory.

Published in:

Advanced Functional Materials, 2010, v. 20, n. 18, p. 2989, doi. 10.1002/adfm.201000599

By:

Kim, Seong Keun;
Lee, Sang Woon;
Han, Jeong Hwan;
Lee, Bora;
Han, Seungwu;
Hwang, Cheol Seong

Publication type:

Article

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications.

Published in:

Nano Select, 2021, v. 2, n. 6, p. 1187, doi. 10.1002/nano.202000281

By:

Park, Hyeon Woo;
Lee, Jae‐Gil;
Hwang, Cheol Seong

Publication type:

Article

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films.

Published in:

Scientific Reports, 2015, p. 7844, doi. 10.1038/srep07844

By:

Kim, Kyung Min;
Park, Tae Hyung;
Hwang, Cheol Seong

Publication type:

Article

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06230

By:

Seunghun Lee;
Ji Young Kim;
Tae-Woo Lee;
Won-Kyung Kim;
Bum-Su Kim;
Ji Hun Park;
Jong-Seong Bae;
Yong Chan Cho;
Jungdae Kim;
Min-Wook Oh;
Cheol Seong Hwang;
Se-Young Jeong

Publication type:

Article

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep03443

By:

Seul Ji Song;
Jun Yeong Seok;
Jung Ho Yoon;
Kyung Min Kim;
Gun Hwan Kim;
Min Hwan Lee;
Cheol Seong Hwang

Publication type:

Article

Thin Hf xZr1- xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability.

Published in:

Advanced Energy Materials, 2014, v. 4, n. 16, p. n/a, doi. 10.1002/aenm.201400610

By:

Park, Min Hyuk;
Kim, Han Joon;
Kim, Yu Jin;
Moon, Taehwan;
Kim, Keum Do;
Hwang, Cheol Seong

Publication type:

Article

The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films.

Published in:

Advanced Materials, 2009, v. 21, n. 28, p. 2870, doi. 10.1002/adma.200802924

By:

Jiang, An Quan;
Lee, Hyun Ju;
Kim, Gun Hwan;
Hwang, Cheol Seong

Publication type:

Article

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors.

Published in:

Advanced Materials, 2008, v. 20, n. 8, p. 1429, doi. 10.1002/adma.200701085

By:

Kim, Seong Keun;
Choi, Gyu-Jin;
Lee, Sang Young;
Seo, Minha;
Lee, Sang Woon;
Han, Jeong Hwan;
Ahn, Hyo-Shin;
Han, Seungwu;
Hwang, Cheol Seong

Publication type:

Article

The low-volatage-switching behavior of sol-gel-derived Pb(Zr, Ti)O 3 thin film capacitors.

Published in:

Integrated Ferroelectrics, 2001, v. 39, n. 1-4, p. 13, doi. 10.1080/10584580108011923

By:

Kim, Seung-Hyun;
Park, Dong-Yeon;
Woo, Hyun-Jung;
Lee, Dong-Soo;
Ha, Jowoong;
Hwang, Cheol Seong;
Jeong, Seehwa;
Kingon, Angus I.

Publication type:

Article

Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors.

Published in:

Integrated Ferroelectrics, 2000, v. 30, n. 1-4, p. 45, doi. 10.1080/10584580008222252

By:

Park, Kyung Woong;
Han, Young Ki;
Oh, Kiyoung;
Yang, Doo Young;
Hwang, Chul Ju;
Park, Jaehoo;
Hwang, Cheol Seong

Publication type:

Article

Low temperature metal-organic chemical vapor deposition of (Ba, Sr)TiO 3 thin films for capacitor applications.

Published in:

Integrated Ferroelectrics, 2000, v. 30, n. 1-4, p. 37, doi. 10.1080/10584580008222251

By:

Hwang, Cheol Seong;
Park, Jaehoo;
Yang, Doo Young;
Yang, Cheol Hoon;
Kim, Dong Hyun;
Han, Young Ki;
Oh, Kiyoung;
Hwang, Chul Ju

Publication type:

Article

Variations of interface potential barrier height and leakage current of (Ba, Sr)TiO 3 thin films deposited by sputtering process.

Published in:

Integrated Ferroelectrics, 1998, v. 20, n. 1-4, p. 255, doi. 10.1080/10584589808238790

By:

Hwang, Cheol Seong;
Lee, Byoung Taek;
Kim, Jin Won;
Cho, Hag-Ju;
Kang, Chang Seok;
Horii, Hideki;
Lee, Sang In;
Lee, Moon Yong

Publication type:

Article

Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO 3 /Pt capacitors fabricated by sputtering process.

Published in:

Integrated Ferroelectrics, 1996, v. 13, n. 1-3, p. 157, doi. 10.1080/10584589608013090

By:

Hwang, Cheol Seong;
Lee, Byoung Taek;
Park, Soon Oh;
Kim, Jin Won;
Cho, Hag-Ju;
Kang, Chang Seok;
Horii, Hideki;
Lee, Sang In;
Lee, Moon Yong

Publication type:

Article

Characterization of MOCVD Pt electrode for ferroelectric thin films.

Published in:

Integrated Ferroelectrics, 1996, v. 13, n. 1-3, p. 79, doi. 10.1080/10584589608013082

By:

Lee, Jong Myeong;
Hwang, Cheol Seong;
Kim, Hyeong Joon

Publication type:

Article

Effects of oxidants on the deposition and dielectric properties of the SrTiO 3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD).

Published in:

Integrated Ferroelectrics, 1996, v. 12, n. 2-4, p. 199, doi. 10.1080/10584589608013063

By:

Hwang, Cheol Seong;
Kang, Chang Seok;
Cho, Hag-Ju;
Park, Soon Oh;
Lee, Byoung Taek;
Kim, Jin Won;
Horii, Hideki;
Lee, Sang In;
Lee, Moon Yong

Publication type:

Article

Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor.

Published in:

Integrated Ferroelectrics, 1996, v. 12, n. 2-4, p. 185, doi. 10.1080/10584589608013062

By:

Chung, Hyun Jin;
Kim, Jin Hong;
Moon, Won Seok;
Park, Seung Bin;
Hwang, Cheol Seong;
Lee, Moon Yong;
Woo, Seong Ihl

Publication type:

Article

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28236-5

By:

Cheng, Yan;
Gao, Zhaomeng;
Ye, Kun Hee;
Park, Hyeon Woo;
Zheng, Yonghui;
Zheng, Yunzhe;
Gao, Jianfeng;
Park, Min Hyuk;
Choi, Jung-Hae;
Xue, Kan-Hao;
Hwang, Cheol Seong;
Lyu, Hangbing

Publication type:

Article

Time-varying data processing with nonvolatile memristor-based temporal kernel.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-25925-5

By:

Jang, Yoon Ho;
Kim, Woohyun;
Kim, Jihun;
Woo, Kyung Seok;
Lee, Hyun Jae;
Jeon, Jeong Woo;
Shim, Sung Keun;
Han, Janguk;
Hwang, Cheol Seong

Publication type:

Article

Deposition and Characterization of High Dielectric Thin Films for Memory Device Application.

Published in:

Surface Review & Letters, 2003, v. 10, n. 4, p. 591, doi. 10.1142/S0218625X03005438

By:

Hyeong Joon Kim;
Ju Cheol Shin;
Cheol Seong Hwang;
Sang Yong No

Publication type:

Article

The Electrical and Physical Analysis of Pt Gate/Al2O3/p-Si (100) with Dual High-k Gate Oxide Thickness for Deep Submicron Complementary Metal-Oxide-Semiconductor Device with Low Power and High Reliability.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1104, doi. 10.1007/s11664-005-0237-8

By:

Chihoon Lee;
Sang Yong No;
Da Il Eom;
Cheol Seong Hwang;
Hyeong Joon Kim

Publication type:

Article

In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100208

By:

Xu, Nuo;
Park, Taegyun;
Yoon, Kyung Jean;
Hwang, Cheol Seong

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 2, p. 1, doi. 10.1002/pssr.202000549

By:

Kim, Jun Shik;
Kang, Sukin;
Jang, Younjin;
Lee, Yonghee;
Kim, Kwangmin;
Kim, Whayoung;
Lee, Woongkyu;
Hwang, Cheol Seong

Publication type:

Article

Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 10, p. 1, doi. 10.1002/pssr.202000304

By:

Jang, Younjin;
Kim, Jun Shik;
Kang, Sukin;
Kim, Jihun;
Lee, Yonghee;
Kim, Kwangmin;
Kim, Whayoung;
Choi, Heenang;
Kim, Nayeon;
Eom, Taeyong;
Chung, Taek-Mo;
Jeon, Woojin;
Lee, Sang Yoon;
Hwang, Cheol Seong

Publication type:

Article

Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 8, p. 1, doi. 10.1002/pssr.202000209

By:

Kwon, Dae Eun;
Kim, Jihun;
Kwon, Young Jae;
Woo, Kyung Seok;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900373

By:

Kim, Sang Hyeon;
Lee, Woongkyu;
An, Cheol Hyun;
Kim, Yumin;
Kwon, Dae Seon;
Kim, Dong-Gun;
Cha, Soon Hyung;
Cho, Seong Tak;
Lim, Junil;
Hwang, Cheol Seong

Publication type:

Article

Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900282

By:

Soon Hyung Cha;
Cheol Hyun An;
Seong Tak Cho;
Dong-Gun Kim;
Dae Seon Kwon;
Jun Il Lim;
Woojin Jeon;
Cheol Seong Hwang

Publication type:

Article

Broad Phase Transition of Fluorite‐Structured Ferroelectrics for Large Electrocaloric Effect.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900177

By:

Park, Min Hyuk;
Mikolajick, Thomas;
Schroeder, Uwe;
Hwang, Cheol Seong

Publication type:

Article

Time‐Efficient Stateful Dual‐Bit‐Memristor Logic.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 6, p. N.PAG, doi. 10.1002/pssr.201900033

By:

Xu, Nuo;
Fang, Liang;
Kim, Kyung Min;
Hwang, Cheol Seong

Publication type:

Article

Single‐Cell Stateful Logic Using a Dual‐Bit Memristor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 3, p. N.PAG, doi. 10.1002/pssr.201800629

By:

Kim, Kyung Min;
Xu, Nuo;
Shao, Xinglong;
Yoon, Kyung Jean;
Kim, Hae Jin;
Williams, R. Stanley;
Hwang, Cheol Seong

Publication type:

Article

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800557

By:

Kim, Sang Hyeon;
Lee, Woongkyu;
An, Cheol Hyun;
Kim, Dong‐Gun;
Kwon, Dae Seon;
Cho, Seong Tak;
Cha, Soon Hyung;
Lim, Jun Il;
Hwang, Cheol Seong

Publication type:

Article

Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 3, p. N.PAG, doi. 10.1002/pssr.201800454

By:

An, Cheol Hyun;
Lee, Woongkyu;
Kim, Sang Hyeon;
Cho, Cheol Jin;
Kim, Dong‐Gun;
Kwon, Dae Seon;
Cho, Seong Tak;
Cha, Soon Hyung;
Lim, Jun Il;
Jeon, Woojin;
Hwang, Cheol Seong

Publication type:

Article

Atomic Layer Deposited Oxygen‐Deficient TaOx Layers for Electroforming‐Free and Reliable Resistance Switching Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 12, p. N.PAG, doi. 10.1002/pssr.201800429

By:

Kuzmichev, Dmitry S.;
Lebedinskii, Yuri Y.;
Hwang, Cheol Seong;
Markeev, Andrey M.

Publication type:

Article

Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 10, p. N.PAG, doi. 10.1002/pssr.201800356

By:

Lee, Woongkyu;
An, Cheol Hyun;
Yoo, Sijung;
Jeon, Woojin;
Chung, Min Jung;
Kim, Sang Hyeon;
Hwang, Cheol Seong

Publication type:

Article

Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 7, p. 410, doi. 10.1002/pssr.201510146

By:

Jeon, Woojin;
Rha, Sang Ho;
Lee, Woongkyu;
An, Cheol Hyun;
Chung, Min Jung;
Kim, Sang Hyun;
Cho, Cheol Jin;
Kim, Seong Keun;
Hwang, Cheol Seong

Publication type:

Article

Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 6, p. 362, doi. 10.1002/pssr.201510110

By:

Park, Tae Hyung;
Song, Seul Ji;
Kim, Hae Jin;
Kim, Soo Gil;
Chung, Suock;
Kim, Beom Yong;
Lee, Kee Jeung;
Kim, Kyung Min;
Choi, Byung Joon;
Hwang, Cheol Seong

Publication type:

Article

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 857, doi. 10.1002/pssr.201409349

By:

Park, Min Hyuk;
Kim, Han Joon;
Kim, Yu Jin;
Moon, Taehwan;
Kim, Keum Do;
Hwang, Cheol Seong

Publication type:

Article

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 532, doi. 10.1002/pssr.201409017

By:

Park, Min Hyuk;
Kim, Han Joon;
Kim, Yu Jin;
Jeon, Woojin;
Moon, Taehwan;
Hwang, Cheol Seong

Publication type:

Article

Nondestructive investigation of interface states in high- k oxide films on Ge substrate using X-ray absorption spectroscopy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. 181, doi. 10.1002/pssr.201206059

By:

Cho, Deok-Yong;
Jung, Hyung-Suk;
Yu, Il-Hyuk;
Park, Won Goo;
Cho, Suyeon;
Kim, Useong;
Oh, Se-Jung;
Park, Byeong-Gyu;
Chang, Fan-Hsiu;
Lin, Hong-Ji;
Hwang, Cheol Seong

Publication type:

Article

Migration of nitrogen in hexagonal Ge2Sb2Te5: An ab-initio study.

Published in:

Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 3, p. 108, doi. 10.1002/pssr.201105516

By:

Kim, Sae-Jin;
Lee, Joohwi;
Lee, Seung-Cheol;
Park, Chan;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents.

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 8, p. 262, doi. 10.1002/pssr.201105250

By:

Kim, Seong Keun;
Han, Sora;
Han, Jeong Hwan;
Lee, Woongkyu;
Hwang, Cheol Seong

Publication type:

Article