Found: 24
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On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers.
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- Advanced Functional Materials, 2022, v. 32, n. 20, p. 1, doi. 10.1002/adfm.202112276
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- Article
Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering.
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- Advanced Functional Materials, 2021, v. 31, n. 36, p. 1, doi. 10.1002/adfm.202104671
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- Article
Amine Gas‐Induced Reversible Optical Bleaching of Bismuth‐Based Lead‐Free Perovskite Thin Films.
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- Advanced Science, 2024, v. 11, n. 4, p. 1, doi. 10.1002/advs.202306391
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- Article
Trap-Assisted Recombination via Integer Charge Transfer States in Organic Bulk Heterojunction Photovoltaics.
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- Advanced Functional Materials, 2014, v. 24, n. 40, p. 6309, doi. 10.1002/adfm.201401513
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- Article
Turning ZnO into an Efficient Energy Upconversion Material by Defect Engineering.
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- Advanced Functional Materials, 2014, v. 24, n. 24, p. 3760, doi. 10.1002/adfm.201400220
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- Article
A Free‐Standing High‐Output Power Density Thermoelectric Device Based on Structure‐Ordered PEDOT:PSS.
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- Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700496
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- Article
Spectroelectrochemistry and Nature of Charge Carriers in Self-Doped Conducting Polymer.
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- Advanced Electronic Materials, 2017, v. 3, n. 8, p. n/a, doi. 10.1002/aelm.201700096
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- Article
Vibronic coherence contributes to photocurrent generation in organic semiconductor heterojunction diodes.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-14476-w
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- Article
Author Correction: A high-conductivity n-type polymeric ink for printed electronics.
- Published in:
- 2022
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- Correction Notice
Corrigendum: Semi-metallic polymers.
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- Nature Materials, 2014, v. 13, n. 6, p. 662, doi. 10.1038/nmat3981
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- Article
Semi-metallic polymers.
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- Nature Materials, 2014, v. 13, n. 2, p. 190, doi. 10.1038/nmat3824
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- Article
Optically detected magnetic resonance study of relaxation/emission processes in the nanoparticle-polymer composite.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 310, doi. 10.15407/spqeo22.03.310
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- Article
Spontaneous exciton dissociation enables spin state interconversion in delayed fluorescence organic semiconductors.
- Published in:
- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26689-8
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- Article
A high-conductivity n-type polymeric ink for printed electronics.
- Published in:
- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22528-y
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- Article
Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires.
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- Small, 2015, v. 11, n. 47, p. 6331, doi. 10.1002/smll.201501538
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- Article
Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting.
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- Small, 2014, v. 10, n. 21, p. 4403, doi. 10.1002/smll.201401342
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- Article
Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys.
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- Advanced Materials, 2013, v. 25, n. 5, p. 738, doi. 10.1002/adma.201202597
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- Article
Remarkable Thermochromism in the Double Perovskite Cs<sub>2</sub>NaFeCl<sub>6</sub>.
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- Advanced Optical Materials, 2024, v. 12, n. 8, p. 1, doi. 10.1002/adom.202301102
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- Article
Near‐Infrared Light‐Responsive Cu‐Doped Cs<sub>2</sub>AgBiBr<sub>6</sub>.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 51, p. 1, doi. 10.1002/adfm.202005521
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- Article
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-64958-6
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- Article
Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study.
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- Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-239
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- Article
Efficient nitrogen incorporation in ZnO nanowires.
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- Scientific Reports, 2015, p. 13406, doi. 10.1038/srep13406
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- Article
Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires.
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- Scientific Reports, 2015, p. 11653, doi. 10.1038/srep11653
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- Article
Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects.
- Published in:
- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-06035-1
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- Article