Found: 18
Select item for more details and to access through your institution.
Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 10, p. 1, doi. 10.1002/adfm.202311387
- By:
- Publication type:
- Article
Observation of Resistive Switching Behavior in Crossbar Core–Shell Ni/NiO Nanowires Memristor.
- Published in:
- Small, 2018, v. 14, n. 6, p. 1, doi. 10.1002/smll.201703153
- By:
- Publication type:
- Article
Solid‐State Diffusional Behaviors of Functional Metal Oxides at Atomic Scale.
- Published in:
- Small, 2018, v. 14, n. 6, p. 1, doi. 10.1002/smll.201702877
- By:
- Publication type:
- Article
Direct Observation of Dual-Filament Switching Behaviors in Ta<sub>2</sub>O<sub>5</sub>-Based Memristors.
- Published in:
- Small, 2017, v. 13, n. 15, p. n/a, doi. 10.1002/smll.201603116
- By:
- Publication type:
- Article
Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays.
- Published in:
- Advanced Science, 2019, v. 6, n. 24, p. N.PAG, doi. 10.1002/advs.201902363
- By:
- Publication type:
- Article
Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor (Adv. Electron. Mater. 10/2021).
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202170047
- By:
- Publication type:
- Article
Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100605
- By:
- Publication type:
- Article
Ni/NiO/HfO<sub>2</sub> Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 11, p. N.PAG, doi. 10.1002/aelm.201800256
- By:
- Publication type:
- Article
Observing the evolution of graphene layers at high current density.
- Published in:
- Nano Research, 2016, v. 9, n. 12, p. 3663, doi. 10.1007/s12274-016-1237-0
- By:
- Publication type:
- Article
Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.
- Published in:
- Advanced Materials, 2015, v. 27, n. 34, p. 5028, doi. 10.1002/adma.201502758
- By:
- Publication type:
- Article
Atomic‐Scale Phase Transformation in Perovskite LaCoO<sub>x</sub> Resistive Switching Memristive Devices.
- Published in:
- Small Structures, 2024, v. 5, n. 7, p. 1, doi. 10.1002/sstr.202400019
- By:
- Publication type:
- Article
Atomic‐Scale Phase Transformation in Perovskite LaCoO<sub>x</sub> Resistive Switching Memristive Devices.
- Published in:
- Small Structures, 2024, v. 5, n. 7, p. 1, doi. 10.1002/sstr.202400019
- By:
- Publication type:
- Article
A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution (Adv. Mater. 41/2023).
- Published in:
- Advanced Materials, 2023, v. 35, n. 41, p. 1, doi. 10.1002/adma.202370298
- By:
- Publication type:
- Article
A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution.
- Published in:
- Advanced Materials, 2023, v. 35, n. 41, p. 1, doi. 10.1002/adma.202302979
- By:
- Publication type:
- Article
A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution (Adv. Mater. 41/2023).
- Published in:
- Advanced Materials, 2023, v. 35, n. 41, p. 1, doi. 10.1002/adma.202370298
- By:
- Publication type:
- Article
A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution.
- Published in:
- Advanced Materials, 2023, v. 35, n. 41, p. 1, doi. 10.1002/adma.202302979
- By:
- Publication type:
- Article
Revealing Resistive Switching Mechanism in CaFeO<sub>x</sub> Perovskite System with Electroforming‐Free and Reset Voltage‐Controlled Multilevel Resistance Characteristics.
- Published in:
- Small, 2022, v. 18, n. 51, p. 1, doi. 10.1002/smll.202205306
- By:
- Publication type:
- Article
Doxapram shortens recovery following sevoflurane anesthesia.
- Published in:
- Canadian Journal of Anaesthesia / Journal Canadien d'Anesthésie, 2006, v. 53, n. 5, p. 456, doi. 10.1007/BF03022617
- By:
- Publication type:
- Article