Found: 22
Select item for more details and to access through your institution.
Ultrascaled 10 nm T‐gate E‐mode InAlN/AlN HEMT with polarized doped buffer for high power microwave applications.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2022, v. 32, n. 4, p. 1, doi. 10.1002/mmce.23057
- By:
- Publication type:
- Article
Detection of biomolecules in dielectric modulated double metal below ferroelectric layer FET with improved sensitivity.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 17, p. 13558, doi. 10.1007/s10854-022-08290-x
- By:
- Publication type:
- Article
Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3155, doi. 10.1007/s10854-020-05064-1
- By:
- Publication type:
- Article
Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16609, doi. 10.1007/s10854-020-04216-7
- By:
- Publication type:
- Article
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications.
- Published in:
- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 6, p. 915, doi. 10.1049/iet-cds.2020.0041
- By:
- Publication type:
- Article
Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor.
- Published in:
- International Journal of Circuit Theory & Applications, 2022, v. 50, n. 10, p. 3626, doi. 10.1002/cta.3347
- By:
- Publication type:
- Article
Technology computer aided design of 29.5% efficient perovskite/interdigitated back contact silicon heterojunction mechanically stacked tandem solar cell for energy-efficient applications.
- Published in:
- Journal of Photonics for Energy, 2017, v. 7, n. 2, p. 1, doi. 10.1117/1.JPE.7.022503
- By:
- Publication type:
- Article
Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance.
- Published in:
- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2024, v. 49, n. 7, p. 9983, doi. 10.1007/s13369-024-08705-3
- By:
- Publication type:
- Article
Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance.
- Published in:
- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2022, v. 47, n. 1, p. 1109, doi. 10.1007/s13369-021-06157-7
- By:
- Publication type:
- Article
Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design.
- Published in:
- International Journal of Numerical Modelling, 2009, v. 22, n. 3, p. 259, doi. 10.1002/jnm.699
- By:
- Publication type:
- Article
Effects of Neural Mechanisms of Pretask Resting EEG Alpha Information on Situational Awareness: A Functional Connectivity Approach.
- Published in:
- 2020
- By:
- Publication type:
- journal article
Cryogenic measurement set-up for characterization of superconducting nano structures for single-photon detection applications.
- Published in:
- Current Science (00113891), 2018, v. 115, n. 6, p. 1085, doi. 10.18520/cs/v115/i6/1085-1090
- By:
- Publication type:
- Article
Influence of fabrication processes on transport properties of superconducting niobium nitride nanowires.
- Published in:
- Current Science (00113891), 2018, v. 114, n. 7, p. 1443, doi. 10.18520/cs/v114/i07/1443-1450
- By:
- Publication type:
- Article
Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2191, doi. 10.1007/s11664-024-10948-7
- By:
- Publication type:
- Article
Sensitivity Analysis of Biomolecule Nanocavity Immobilization in a Dielectric Modulated Triple-Hybrid Metal Gate-All-Around Junctionless NWFET Biosensor for Detecting Various Diseases.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2236, doi. 10.1007/s11664-022-09466-1
- By:
- Publication type:
- Article
Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET.
- Published in:
- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 9, p. N.PAG, doi. 10.1007/s00339-019-2900-6
- By:
- Publication type:
- Article
Source/Gate Material-Engineered Double Gate TFET for improved RF and linearity performance: a numerical simulation.
- Published in:
- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00339-018-2158-4
- By:
- Publication type:
- Article
Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: a solution for suppressed ambipolarity and enhanced ON state behavior.
- Published in:
- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 11, p. 1, doi. 10.1007/s00339-016-0510-0
- By:
- Publication type:
- Article
Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers.
- Published in:
- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 8, p. 1, doi. 10.1007/s00339-016-0239-9
- By:
- Publication type:
- Article
Hot-carrier reliability monitoring of DMG ISE SON MOSFET for improved analog performance.
- Published in:
- Microwave & Optical Technology Letters, 2010, v. 52, n. 3, p. 770, doi. 10.1002/mop.25004
- By:
- Publication type:
- Article
Design considerations and impact of technological parametric variations on RF/microwave performance of GEWE-RC MOSFET.
- Published in:
- Microwave & Optical Technology Letters, 2010, v. 52, n. 3, p. 652, doi. 10.1002/mop.25008
- By:
- Publication type:
- Article
Gate material engineered-trapizoidal recessed channel MOSFET for high-performance analog and RF applications.
- Published in:
- Microwave & Optical Technology Letters, 2010, v. 52, n. 3, p. 694, doi. 10.1002/mop.25012
- By:
- Publication type:
- Article