Works by Chaldyshev, V. V.
1
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6
- Chaldyshev, V. V.;
- Shkolnik, A. S.;
- Evtikhiev, V. P.;
- Holden, T.
- Article
2
- Semiconductors, 2001, v. 35, n. 1, p. 86, doi. 10.1134/1.1340295
- Grinyaev, S. N.;
- Chaldyshev, V. A.
- Article
3
- Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Chernigovskiı, A. V.;
- Suvorova, A. A.;
- Bert, N. A.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
4
- Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Vul’, S. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
5
- Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
- Vilisova, M. D.;
- Ivonin, I. V.;
- Lavrentieva, L. G.;
- Subach, S. V.;
- Yakubenya, M. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.
- Article
6
- Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561
- Chaldyshev, V. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Kunitsyn, A. E.;
- Musikhin, Yu. G.;
- Tret’yakov, V. V.;
- Werner, P.
- Article
7
- Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Bert, N. A.;
- Suvorova, A. A.;
- Konnikov, S. G.;
- Chernigovskiı, A. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
8
- Semiconductors, 1998, v. 32, n. 9, p. 980, doi. 10.1134/1.1187529
- Grinyaev, S. N.;
- Chaldyshev, V. A.
- Article
9
- Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Tret'yakov, V. V.;
- Faleev, N. N.
- Article
10
- Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483
- Bert, N. A.;
- Musikhin, Yu. G.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Suvorova, A. A.;
- Chaldyshev, V. V.;
- Werner, R.
- Article
11
- Semiconductors, 1998, v. 32, n. 5, p. 257
- Mil'vidskii, M. G.;
- Chaldyshev, V. V.
- Article
12
- Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352
- Faleev, N. N.;
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Tret'yakov, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
13
- Semiconductors, 1997, v. 31, n. 12, p. 1217, doi. 10.1134/1.1187296
- Dymova, N. N.;
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Markov, A. V.
- Article
14
- Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Mil’vidskaya, A. G.;
- Mil’vidskiı, M. G.
- Article
15
- Technical Physics Letters, 2023, v. 49, p. S323, doi. 10.1134/S1063785023010194
- Kosarev, A. N.;
- Chaldyshev, V. V.
- Article
16
- Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151
- Snigirev, L. A.;
- Bert, N. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
- Article
17
- Semiconductors, 2023, v. 57, n. 13, p. 615, doi. 10.1134/S1063782623050160
- Snigirev, L. A.;
- Ushanov, V. I.;
- Ivanov, A. A.;
- Bert, N. A.;
- Kirilenko, D. A.;
- Yagovkina, M. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. P.;
- Kasatkin, I. A.;
- Chaldyshev, V. V.
- Article
18
- Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155
- Semyagin, B. R.;
- Kolesnikov, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.;
- Popova, T. B.;
- Ushanov, V. I.;
- Chaldyshev, V. V.
- Article
19
- Semiconductors, 2021, v. 55, n. 1, p. S49, doi. 10.1134/S1063782621090074
- Ivanov, A. A.;
- Chaldyshev, V. V.;
- Zavarin, E. E.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Tsatsulnikov, A. F.
- Article
20
- Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
21
- Semiconductors, 2018, v. 52, n. 4, p. 468, doi. 10.1134/S1063782618040292
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskiy, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
22
- Semiconductors, 2018, v. 52, n. 4, p. 447, doi. 10.1134/S1063782618040097
- Chaldyshev, V. V.;
- Kundelev, E. V.;
- Poddubny, A. N.;
- Vasil’ev, A. P.;
- Yagovkina, M. A.;
- Chend, Y.;
- Maharjan, N.;
- Liu, Z.;
- Nakarmi, M. L.;
- Shakya, N. M.
- Article
23
- Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
24
- Semiconductors, 2016, v. 50, n. 11, p. 1431, doi. 10.1134/S1063782616110051
- Bolshakov, A.;
- Chaldyshev, V.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.
- Article
25
- Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154
- Kosarev, A.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
26
- Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
- Ushanov, V.;
- Chaldyshev, V.;
- Bert, N.;
- Nevedomsky, V.;
- Il'inskaya, N.;
- Lebedeva, N.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
27
- Semiconductors, 2015, v. 49, n. 12, p. 1661, doi. 10.1134/S106378261512012X
- Nevedomskiy, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhernskiy, V.;
- Putyato, M.;
- Semyagin, B.
- Article
28
- Semiconductors, 2015, v. 49, n. 11, p. 1400, doi. 10.1134/S1063782615110044
- Bolshakov, A.;
- Chaldyshev, V.;
- Babichev, A.;
- Kudryashov, D.;
- Gudovskikh, A.;
- Morozov, I.;
- Sobolev, M.;
- Nikitina, E.
- Article
29
- Semiconductors, 2015, v. 49, n. 1, p. 4, doi. 10.1134/S1063782615010042
- Chaldyshev, V.;
- Bolshakov, A.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.;
- Yagovkina, M.
- Article
30
- Semiconductors, 2014, v. 48, n. 11, p. 1539, doi. 10.1134/S1063782614110207
- Nevedomskiy, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskiy, V.;
- Putyato, M.;
- Semyagin, B.
- Article
31
- Semiconductors, 2013, v. 47, n. 9, p. 1185, doi. 10.1134/S1063782613090170
- Nevedomskiy, V. N.;
- Bert, N. A.;
- Chaldyshev, V. V.;
- Preobrazhenskiy, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
32
- Semiconductors, 2013, v. 47, n. 8, p. 1137, doi. 10.1134/S1063782613080150
- Pastor, A.;
- Prokhorova, U.;
- Serdobintsev, P.;
- Chaldyshev, V.;
- Yagovkina, M.
- Article
33
- Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
34
- Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
- Lukin, P.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
35
- Semiconductors, 2012, v. 46, n. 8, p. 1016, doi. 10.1134/S1063782612080052
- Chaldyshev, V.;
- Kundelev, E.;
- Nikitina, E.;
- Egorov, A.;
- Gorbatsevich, A.
- Article
36
- Semiconductors, 2012, v. 46, n. 5, p. 619, doi. 10.1134/S106378261205017X
- Pastor, A.;
- Serdobintsev, P.;
- Chaldyshev, V.
- Article
37
- Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
- Nevedomskii, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
38
- Semiconductors, 2010, v. 44, n. 9, p. 1222, doi. 10.1134/S1063782610090204
- Chaldyshev, V. V.;
- Sholohov, D. E.;
- Vasil'ev, A. P.
- Article
39
- Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
- Nevedomskii, V. N.;
- Bert, N. A.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
40
- Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
- Bert, N. A.;
- Kolesnikova, A. L.;
- Nevedomsky, V. N.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Romanov, A. E.;
- Seleznev, V. M.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
- Article
41
- Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211
- Chaldyshev, V. V.;
- Yagovkina, M. A.;
- Baidakova, M. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
42
- Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274
- Boitsov, A.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
43
- Semiconductors, 2007, v. 41, n. 12, p. 1434, doi. 10.1134/S106378260712010X
- Chaldyshev, V.;
- Shkol’nik, A.;
- Evtikhiev, V.;
- Holden, T.
- Article
44
- Semiconductors, 2006, v. 40, n. 12, p. 1432, doi. 10.1134/S1063782606120116
- Chaldyshev, V. V.;
- Shkol’nik, A. S.;
- Evtikhiev, V. P.;
- Holden, T.
- Article
45
- Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589
- Brunkov, P. N.;
- Gutkin, A. A.;
- Chaldyshev, V. V.;
- Bert, N. N.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
46
- Semiconductors, 2004, v. 38, n. 4, p. 387, doi. 10.1134/1.1734663
- Brunkov, P. N.;
- Gutkin, A. A.;
- Moiseenko, A. K.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.;
- Cherkashin, N. N.;
- Konnikov, S. G.;
- Preobrazhenski&icaron;, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
47
- Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
- Vilisova, M. D.;
- Kunitsyn, A. E.;
- Lavrent’eva, L. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Toropov, S. E.;
- Chaldyshev, V. V.
- Article
48
- Optics & Spectroscopy, 2019, v. 126, n. 5, p. 492, doi. 10.1134/S0030400X19050151
- Kosarev, A. N.;
- Chaldyshev, V. V.;
- Kondikov, A. A.;
- Vartanyan, T. A.;
- Toropov, N. A.;
- Gladskikh, I. A.;
- Gladskikh, P. V.;
- Akimov, I.;
- Bayer, M.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
49
- Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 167, doi. 10.3390/nano14020167
- Ushanov, Vitalii I.;
- Eremeev, Sergey V.;
- Silkin, Vyacheslav M.;
- Chaldyshev, Vladimir V.
- Article
50
- Nanomaterials (2079-4991), 2024, v. 14, n. 1, p. 109, doi. 10.3390/nano14010109
- Ushanov, Vitalii I.;
- Eremeev, Sergey V.;
- Silkin, Vyacheslav M.;
- Chaldyshev, Vladimir V.
- Article
