On the Asymmetry of Resistive Switching Transitions.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 13, p. 2639, doi. 10.3390/electronics13132639
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- Publication type:
- Article
Works by Castán, Helena
Results: 8
1
2
Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO 2 /Pt Stacks.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 3, p. 479, doi. 10.3390/electronics11030479
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- Publication type:
- Article
3
Influences of the Temperature on the Electrical Properties of HfO 2 -Based Resistive Switching Devices.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 22, p. 2816, doi. 10.3390/electronics10222816
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- Publication type:
- Article
4
Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays †.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 5, p. 864, doi. 10.3390/electronics9050864
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- Publication type:
- Article
5
Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.
- Published in:
- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1545-z
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- Publication type:
- Article
6
Energía solar: De la utopía a la esperanza.
- Published in:
- Revista Española de Física, 2020, v. 34, n. 4, p. 55
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- Publication type:
- Article
7
Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 15, p. 2593, doi. 10.3390/nano12152593
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- Publication type:
- Article
8
Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 3, p. 877, doi. 10.3390/ma15030877
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- Publication type:
- Article