Found: 2

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  • Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1–4 GHz range.

    Published in:
    International Journal of Microwave & Wireless Technologies, 2015, v. 7, n. 1, p. 1, doi. 10.1017/S1759078714000476
    By:
    • Berrached, Chamssedine;
    • Bouw, Diane;
    • Camiade, Marc;
    • El-Akhdar, Kassem;
    • Barataud, Denis;
    • Neveux, Guillaume
    Publication type:
    Article

  • Industrial GaN FET technology.

    Published in:
    International Journal of Microwave & Wireless Technologies, 2010, v. 2, n. 1, p. 21, doi. 10.1017/S1759078710000073
    By:
    • Blanck, Hervé;
    • Thorpe, James R.;
    • Behtash, Reza;
    • Splettstößer, Jörg;
    • Brückner, Peter;
    • Heckmann, Sylvain;
    • Jung, Helmut;
    • Riepe, Klaus;
    • Bourgeois, Franck;
    • Hosch, Michael;
    • Köhn, Dominik;
    • Stieglauer, Hermann;
    • Floriot, Didier;
    • Lambert, Benoît;
    • Favede, Laurent;
    • Ouarch, Zineb;
    • Camiade, Marc
    Publication type:
    Article