Found: 11
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Fermi Level Control of Point Defects During Growth of Mg-Doped GaN.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 815, doi. 10.1007/s11664-012-2342-9
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- Article
Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications.
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- Applied Physics A: Materials Science & Processing, 2012, v. 108, n. 3, p. 719, doi. 10.1007/s00339-012-6956-9
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- Article
Desorption induced GaN quantum dots on (0001) AlN by MOVPE.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 9, p. 526, doi. 10.1002/pssr.201510217
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- Article
Identifying multi-excitons in quantum dots: the subtle connection between electric dipole moments and emission linewidths.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 9, p. 521, doi. 10.1002/pssr.201510253
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- Article
Manifestation of unconventional biexciton states in quantum dots.
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- Nature Communications, 2014, v. 5, n. 12, p. 5721, doi. 10.1038/ncomms6721
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- Article
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al<sub>0.64</sub>Ga<sub>0.36</sub>N Double Quantum Wells.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700373
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- Article
Free‐Standing ZnSe‐Based Microdisk Resonators: Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry.
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- Physica Status Solidi (B), 2021, v. 258, n. 11, p. 1, doi. 10.1002/pssb.202100249
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- Article
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities.
- Published in:
- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-02999-2
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- Article
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots.
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- Light: Science & Applications, 2022, v. 11, n. 1, p. 1, doi. 10.1038/s41377-022-00799-4
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- Article
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots.
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- Light: Science & Applications, 2022, v. 11, n. 1, p. 1, doi. 10.1038/s41377-022-00799-4
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- Article
Carbon doped GaN layers grown by Pseudo-Halide Vapour Phase Epitaxy.
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- Crystal Research & Technology, 2017, v. 52, n. 8, p. n/a, doi. 10.1002/crat.201600364
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- Article