Works by CIRLIN, G. E.

Results: 103

POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319

By:

FÜRST, J.;
PASCHER, H.;
SHALYGIN, V. A.;
VOROBJEV, L. E.;
FIRSOV, D. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
USTINOV, V. M.

Publication type:

Article

MBE GROWTH OF GaAs NANOWHISKERS STIMULATED BY THE ADATOM DIFFUSION.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 225, doi. 10.1142/S0219581X07004626

By:

DUBROVSKII, V. G.;
SOSHNIKOV, I. P.;
TONKIKH, A. A.;
USTINOV, V. M.;
CIRLIN, G. E.;
SAMSONENKO, YU. B.

Publication type:

Article

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X

By:

FIRSOV, D. A.;
VOROBJEV, L. E.;
BARZILOVICH, M. A.;
YU. PANEVIN, V.;
MIKHAYLOV, I. V.;
FEDOSOV, N. K.;
SHALYGIN, V. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
ZHUKOV, A. E.;
PIKHTIN, N. A.;
TARASOV, I. S.;
USTINOV, V. M.;
JULIEN, F. H.;
SEKOWSKI, M.;
HANNA, S.;
SEILMEIER, A.

Publication type:

Article

INFLUENCE OF HYDROSTATIC PRESSURE ON EXCITON PHOTOLUMINESCENCE SPECTRUM OF EXCITON MOLECULES InAs/GaAs.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 249, doi. 10.1142/S0219581X07004651

By:

GAISIN, V. A.;
NOVIKOV, B. V.;
SOKOLOV, A. S.;
SHTROM, I. V.;
CHUGUNOV, V. A.;
TALALAEV, V. G.;
ZAKHAROV, N. D.;
CIRLIN, G. E.;
SAMSONENKO, YU. B.;
TONKIKH, A. A.;
USTINOV, V. P.

Publication type:

Article

TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 µm Photoluminescence at Room Temperature.

Published in:

Microscopy & Microanalysis, 2003, v. 9, p. 282, doi. 10.1017/S1431927603023407

By:

Zakharov, N. D.;
Talalaev, V. G.;
Cirlin, G. E.;
Tonkikh, A.;
Werner, P.

Publication type:

Article

Retranslation of Luminescence Excitation during Cascade Transitions in Hybrid Nanostructures Based on InP/InAsP/InP NWs and CdSe/ZnS-TOPO QDs.

Published in:

Optics & Spectroscopy, 2024, v. 132, n. 4, p. 378, doi. 10.1134/S0030400X24040106

By:

Khrebtov, A. I.;
Kulagina, A. S.;
Sibirev, N. V.;
Yablonskiy, A. N.;
Ruban, A. S.;
Reznik, R. R.;
Cirlin, G. E.;
Danilov, V. V.

Publication type:

Article

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 4, p. 796, doi. 10.1134/S1027451024700460

By:

Lendyashova, V. V.;
Ilkiv, I. V.;
Borodin, B. R.;
Kirilenko, D. A.;
Dragunova, A. S.;
Shugabaev, T.;
Cirlin, G. E.

Publication type:

Article

On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 2, p. 408, doi. 10.1134/S1027451024020289

By:

Gridchin, V. O.;
Komarov, S. D.;
Soshnikov, I. P.;
Shtrom, I. V.;
Reznik, R. R.;
Kryzhanovskaya, N. V.;
Cirlin, G. E.

Publication type:

Article

Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079

By:

Petrov, V. N.;
Polyakov, N. K.;
Egorov, V. A.;
Cirlin, G. E.;
Zakharov, N. D.;
Werner, P.;
Ustinov, V. M.;
Denisov, D. V.;
Ledentsov, N. N.;
Alferov, Zh. I.

Publication type:

Article

Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires.

Published in:

Technical Physics Letters, 2024, v. 50, n. 2, p. 164, doi. 10.1134/S1063785023170224

By:

Sibirev, N. V.;
Berdnikov, Y. S.;
Shtrom, I. V.;
Ubyivovk, E. V.;
Reznik, R. R.;
Cirlin, G. E.

Publication type:

Article

Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN.

Published in:

Technical Physics Letters, 2023, v. 49, p. S364, doi. 10.1134/S106378502390073X

By:

Gridchin, V. O.;
Soshnikov, I. P.;
Reznik, R. R.;
Komarov, S. D.;
Pirogov, E. V.;
Lendyashova, V. V.;
Kotlyar, K. P.;
Kryzhanovskaya, N. V.;
Cirlin, G. E.

Publication type:

Article

Erratum to: Refractive Index Spectra of Mononucleotide Films on Silicon in the Terahertz Range.

Published in:

2022

By:

Kulagina, A. S.;
Trukhin, V. N.;
Stupin, D. D.;
Chernev, A. L.;
Dubina, M. V.;
Cirlin, G. E.

Publication type:

Correction Notice

Complex Refractive of the Spectra Index of Mononucleotide Films on Silicon in the Terahertz Range.

Published in:

Technical Physics Letters, 2021, v. 47, n. 12, p. 862, doi. 10.1134/S106378502109008X

By:

Kulagina, A. S.;
Trukhin, V. N.;
Stupin, D. D.;
Chernev, A. L.;
Dubina, M. V.;
Cirlin, G. E.

Publication type:

Article

Directional Radiation from GaAs quantum dots in AlGaAs nanowires.

Published in:

Technical Physics Letters, 2021, v. 47, n. 5, p. 405, doi. 10.1134/S106378502104026X

By:

Reznik, R. R.;
Morozov, K. M.;
Krestnikov, I. L.;
Kotlyar, K. P.;
Soshnikov, I. P.;
Leandro, L.;
Akopian, N.;
Cirlin, G. E.

Publication type:

Article

Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy.

Published in:

Technical Physics Letters, 2020, v. 46, n. 11, p. 1080, doi. 10.1134/S1063785020110061

By:

Gridchin, V. O.;
Kotlyar, K. P.;
Reznik, R. R.;
Dvoretskaya, L. N.;
Parfen'eva, A. V.;
Mukhin, I. S.;
Cirlin, G. E.

Publication type:

Article

Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate.

Published in:

Technical Physics Letters, 2019, v. 45, n. 11, p. 1111, doi. 10.1134/S1063785019110129

By:

Reznik, R. R.;
Kotlyar, K. P.;
Kryzhanovskaya, N. V.;
Morozov, S. V.;
Cirlin, G. E.

Publication type:

Article

The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires.

Published in:

Technical Physics Letters, 2019, v. 45, n. 8, p. 835, doi. 10.1134/S1063785019080212

By:

Grigorieva, N. R.;
Shtrom, I. V.;
Grigoriev, R. V.;
Soshnikov, I. P.;
Reznik, R. R.;
Samsonenko, Yu. B.;
Sibirev, N. V.;
Cirlin, G. E.

Publication type:

Article

Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy.

Published in:

Technical Physics Letters, 2018, v. 44, n. 2, p. 112, doi. 10.1134/S1063785018020116

By:

Reznik, R. R.;
Cirlin, G. E.;
Shtrom, I. V.;
Khrebtov, A. I.;
Soshnikov, I. P.;
Kryzhanovskaya, N. V.;
Moiseev, E. I.;
Zhukov, A. E.

Publication type:

Article

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185

By:

Novikov, B. V.;
Serov, S. Yu.;
Filosofov, N. G.;
Shtrom, I. V.;
Talalaev, V. G.;
Vyvenko, O. F.;
Ubyivovk, E. V.;
Samsonenko, Yu. B.;
Bouravleuv, A. D.;
Soshnikov, I. P.;
Sibirev, N. V.;
Cirlin, G. E.;
Dubrovskii, V. G.

Publication type:

Article

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 112, doi. 10.1002/pssr.200903057

By:

Cirlin, G. E.;
Dubrovskii, V. G.;
Soshnikov, I. P.;
Sibirev, N. V.;
Samsonenko, Yu. B.;
Bouravleuv, A. D.;
Harmand, J. C.;
Glas, F.

Publication type:

Article

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing.

Published in:

Physica Status Solidi (B), 2010, v. 247, n. 2, p. 347, doi. 10.1002/pssb.200945457

By:

Smirnov, M. B.;
Talalaev, V. G.;
Novikov, B. V.;
Sarangov, S. V.;
Zakharov, N. D.;
Werner, P.;
Gösele, U.;
Tomm, J. W.;
Cirlin, G. E.

Publication type:

Article

Front Cover (Phys. Status Solidi B 2/2010).

Published in:

Physica Status Solidi (B), 2010, v. 247, n. 2, p. n/a, doi. 10.1002/pssb.201090002

By:

Smirnov, M. B.;
Talalaev, V. G.;
Novikov, B. V.;
Sarangov, S. V.;
Zakharov, N. D.;
Werner, P.;
Gösele, U.;
Tomm, J. W.;
Cirlin, G. E.

Publication type:

Article

The effective thickness, temperature and growth rate behavior of quantum dot ensembles.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 10, p. R42, doi. 10.1002/pssb.200409049

By:

Dubrovskii, V. G.;
Cirlin, G. E.;
Ustinov, V. M.

Publication type:

Article

On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 7, p. R30, doi. 10.1002/pssb.200409042

By:

Dubrovskii, V. G.;
Soshnikov, I. P.;
Cirlin, G. E.;
Tonkikh, A. A.;
Samsonenko, Yu. B.;
Sibirev, N. V.;
Ustinov, V. M.

Publication type:

Article

Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system.

Published in:

Physica Status Solidi (B), 2003, v. 236, n. 1, p. R1, doi. 10.1002/pssb.200301758

By:

Tonkikh, A. A.;
Dubrovskii, V. G.;
Cirlin, G. E.;
Egorov, V. A.;
Ustinov, V. M.;
Werner, P.

Publication type:

Article

Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 222, doi. 10.1134/S1063782624030059

By:

Ilkiv, I. V.;
Lendyashova, V. V.;
Borodin, B. B.;
Talalaev, V. G.;
Shugabaev, T.;
Reznik, R. R.;
Cirlin, G. E.

Publication type:

Article

Specific Features of Structural Stresses in InGaN/GaN Nanowires.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 795, doi. 10.1134/S1063782621090207

By:

Soshnikov, I. P.;
Kotlyar, K. P.;
Reznik, R. R.;
Gridchin, V. O.;
Lendyashova, V. V.;
Vershinin, A. V.;
Lysak, V. V.;
Kirilenko, D. A.;
Bert, N. A.;
Cirlin, G. E.

Publication type:

Article

Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 678, doi. 10.1134/S1063782621080108

By:

Ilkiv, I. V.;
Kotlyar, K. P.;
Kirilenko, D. A.;
Osipov, A. V.;
Soshnikov, I. P.;
Terpitsky, A. N.;
Cirlin, G. E.

Publication type:

Article

Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1141, doi. 10.1134/S1063782620090158

By:

Khrebtov, A. I.;
Kulagina, A. S.;
Danilov, V. V.;
Gromova, E. S.;
Skurlov, I. D.;
Litvin, A. P.;
Reznik, R. R.;
Shtrom, I. V.;
Cirlin, G. E.

Publication type:

Article

Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1092, doi. 10.1134/S1063782620090298

By:

Cirlin, G. E.;
Reznik, R. R.;
Zhukov, A. E.;
Khabibullin, R. A.;
Maremyanin, K. V.;
Gavrilenko, V. I.;
Morozov, S. V.

Publication type:

Article

Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1075, doi. 10.1134/S1063782620090237

By:

Reznik, R. R.;
Gridchin, V. O.;
Kotlyar, K. P.;
Kryzhanovskaya, N. V.;
Morozov, S. V.;
Cirlin, G. E.

Publication type:

Article

MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056

By:

Dubrovskii, V. G.;
Reznik, R. R.;
Kryzhanovskaya, N. V.;
Shtrom, I. V.;
Ubyivovk, E. D.;
Soshnikov, I. P.;
Cirlin, G. E.

Publication type:

Article

Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1258, doi. 10.1134/S1063782619090082

By:

Khrebtov, A. I.;
Reznik, R. R.;
Ubyivovk, E. V.;
Litvin, A. P.;
Skurlov, I. D.;
Parfenov, P. S.;
Kulagina, A. S.;
Danilov, V. V.;
Cirlin, G. E.

Publication type:

Article

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285

By:

Shtrom, I. V.;
Kotlyar, K. P.;
Filosofov, N. G.;
Serov, A. Yu.;
Krizhkov, D. I.;
Samsonenko, Yu. B.;
Ilkiev, I. V.;
Reznik, R. R.;
Agekyan, V. F.;
Cirlin, G. E.

Publication type:

Article

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X

By:

Fedorov, V. V.;
Bolshakov, A. D.;
Dvoretckaia, L. N.;
Sapunov, G. A.;
Kirilenko, D. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2088, doi. 10.1134/S1063782618160054

By:

Bolshakov, A. D.;
Dvoretckaia, L. N.;
Fedorov, V. V.;
Sapunov, G. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Mukhin, M. S.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Electromechanical Switch Based on InxGa1 -xAs Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1833, doi. 10.1134/S1063782618140026

By:

Alekseev, P. A.;
Sharov, V. A.;
Dunaevskiy, M. S.;
Cirlin, G. E.;
Reznik, R. R.;
Berkovits, V. L.

Publication type:

Article

Effect of the Conductive Channel Cut-Off on Operation of n+-n-n+ GaN NW-Based Gunn Diode.

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1809, doi. 10.1134/S106378261814021X

By:

Mozharov, A. M.;
Vasiliev, A. A.;
Komissarenko, F. E.;
Bolshakov, A. D.;
Sapunov, G. A.;
Fedorov, V. V.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047

By:

Alekseev, P. A.;
Dunaevskiy, M. S.;
Mikhailov, A. O.;
Lebedev, S. P.;
Lebedev, A. A.;
Ilkiv, I. V.;
Khrebtov, A. I.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

Solar Cell Based on Core/Shell Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229

By:

Sibirev, N. V.;
Kotlyar, K. P.;
Koryakin, A. A.;
Shtrom, I. V.;
Ubiivovk, E. V.;
Soshnikov, I. P.;
Reznik, R. R.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210

By:

Reznik, R. R.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Lebedev, S. P.;
Lebedev, A. A.;
Kirilenko, D. A.;
Alexeev, P. A.;
Cirlin, G. E.

Publication type:

Article

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258

By:

Cirlin, G. E.;
Reznik, R. R.;
Samsonenko, Yu. B.;
Khrebtov, A. I.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Kirilenko, D. A.;
Kryzhanovskaya, N. V.

Publication type:

Article

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251

By:

Reznik, R. R.;
Kotlyar, K. P.;
Soshnikov, I. P.;
Kukushkin, S. A.;
Osipov, A. V.;
Cirlin, G. E.

Publication type:

Article

GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 609, doi. 10.1134/S1063782618050020

By:

Alekseev, P. A.;
Sharov, V. A.;
Geydt, P.;
Dunaevskiy, M. S.;
Soshnikov, I. P.;
Reznik, R. R.;
Lysak, V. V.;
Lähderanta, E.;
Cirlin, G. E.

Publication type:

Article

The Features of GaAs Nanowire SEM Images.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 605, doi. 10.1134/S1063782618050317

By:

Soshnikov, I. P.;
Kotlyar, K. P.;
Bert, N. A.;
Kirilenko, D. A.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299

By:

Shtrom, I. V.;
Filosofov, N. G.;
Agekian, V. F.;
Smirnov, M. B.;
Serov, A. Yu.;
Reznik, R. R.;
Kudryavtsev, K. E.;
Cirlin, G. E.

Publication type:

Article

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 489, doi. 10.1134/S1063782618040231

By:

Mozharov, A. M.;
Vasiliev, A. A.;
Bolshakov, A. D.;
Sapunov, G. A.;
Fedorov, V. V.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103

By:

Cirlin, G. E.;
Reznik, R. R.;
Shtrom, I. V.;
Khrebtov, A. I.;
Samsonenko, Yu. B.;
Kukushkin, S. A.;
Kasama, T.;
Akopian, N.;
Leonardo, L.

Publication type:

Article

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1050, doi. 10.1134/S1063782610080178

By:

Talalaev, V. G.;
Senichev, A. V.;
Novikov, B. V.;
Tomm, J. W.;
Elsaesser, T.;
Zakharov, N. D.;
Werner, P.;
Gösele, U.;
Samsonenko, Yu. B.;
Cirlin, G. E.

Publication type:

Article

Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 610, doi. 10.1134/S1063782610050118

By:

Dementyev, P. A.;
Dunaevskii, M. S.;
Samsonenko, Yu. B.;
Cirlin, G. E.;
Titkov, A. N.

Publication type:

Article