ZnGa<sub>2</sub>O<sub>4</sub> THIN FILM TRANSISTORS AND PHOTOTRANSISTORS BY RF SPUTTERING METHOD.
- Published in:
- Surface Review & Letters, 2025, v. 32, n. 8, p. 1, doi. 10.1142/S0218625X25400098
- By:
- Publication type:
- Article
Works matching AU CHANG, SHENG-PO
Results: 22
1
2
Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3063, doi. 10.1007/s11664-024-11035-7
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- Publication type:
- Article
3
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 845, doi. 10.1007/s10854-016-5599-6
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- Publication type:
- Article
4
Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6923, doi. 10.1007/s11664-018-6618-6
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- Publication type:
- Article
5
Bright CsPbBr 3 Perovskite Nanocrystals with Improved Stability by In-Situ Zn-Doping.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 9, p. 759, doi. 10.3390/nano12050759
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- Publication type:
- Article
6
Bright CsPbBr 3 Perovskite Nanocrystals with Improved Stability by In-Situ Zn-Doping.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/nano12050759
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- Publication type:
- Article
7
Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 6, p. 1, doi. 10.1142/S0217979225400296
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- Publication type:
- Article
8
Dual-junction Gallium nitride solar cells with hybrid tunnel junction layers.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 6, p. 1, doi. 10.1142/S0217979225400272
- By:
- Publication type:
- Article
9
Investigation for AGZO RRAM using the RF Co-sputtering method.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 6, p. 1, doi. 10.1142/S0217979225400211
- By:
- Publication type:
- Article
10
Fabrication and application of two-dimensional tungsten disulfide thin film.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 6, p. 1, doi. 10.1142/S0217979225400132
- By:
- Publication type:
- Article
11
The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 5, p. 631, doi. 10.3390/electronics10050631
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- Publication type:
- Article
12
High Response of Ethanol Gas Sensor Based on NiO-Doped Apple Pectin by the Solution Process.
- Published in:
- Coatings (2079-6412), 2021, v. 11, n. 9, p. 1073, doi. 10.3390/coatings11091073
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- Publication type:
- Article
13
Fabrication and Characterization of In 0.9 Ga 0.1 O EGFET pH Sensors.
- Published in:
- Coatings (2079-6412), 2021, v. 11, n. 8, p. 929, doi. 10.3390/coatings11080929
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- Publication type:
- Article
14
Development of Indium Titanium Zinc Oxide Thin Films Used as Sensing Layer in Gas Sensor Applications.
- Published in:
- Coatings (2079-6412), 2021, v. 11, n. 7, p. 807, doi. 10.3390/coatings11070807
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- Publication type:
- Article
15
Characteristics of MgIn 2 O 4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer.
- Published in:
- Coatings (2079-6412), 2020, v. 10, n. 12, p. 1261, doi. 10.3390/coatings10121261
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- Publication type:
- Article
16
Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering.
- Published in:
- Coatings (2079-6412), 2020, v. 10, n. 10, p. 994, doi. 10.3390/coatings10100994
- By:
- Publication type:
- Article
17
Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal.
- Published in:
- Coatings (2079-6412), 2020, v. 10, n. 5, p. 504, doi. 10.3390/coatings10050504
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- Publication type:
- Article
18
Ambient-Processed, Additive-Assisted CsPbBr3 Perovskite Light-Emitting Diodes with Colloidal NiOx Nanoparticles for Efficient Hole Transporting.
- Published in:
- Coatings (2079-6412), 2020, v. 10, n. 4, p. 336, doi. 10.3390/coatings10040336
- By:
- Publication type:
- Article
19
Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures.
- Published in:
- Processes, 2021, v. 9, n. 10, p. 1727, doi. 10.3390/pr9101727
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- Publication type:
- Article
20
UV Illumination Room-Temperature ZnO Nanoparticle Ethanol Gas Sensors.
- Published in:
- ISRN Nanotechnology, 2012, p. 1, doi. 10.5402/2012/453517
- By:
- Publication type:
- Article
21
New Energy Materials and Device Application.
- Published in:
- International Journal of Photoenergy, 2015, v. 2015, p. 1, doi. 10.1155/2015/657152
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- Publication type:
- Article
22
Scalability of Phase Change Materials in Nanostructure Template.
- Published in:
- International Journal of Photoenergy, 2015, v. 2015, p. 1, doi. 10.1155/2015/253296
- By:
- Publication type:
- Article