Optical Properties of Germanium Monolayers on Silicon.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 941, doi. 10.1134/1.1393031
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- Publication type:
- Article
Works by Burbaev, T. M.
Results: 7
1
2
An Avalanche Photodiode with Metal–Insulator–Semiconductor Properties.
- Published in:
- Semiconductors, 2001, v. 35, n. 1, p. 117, doi. 10.1134/1.1340301
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- Publication type:
- Article
3
High-Frequency Properties of Avalanche Multiplication of Photocarriers in Structures with Negative Feedback.
- Published in:
- Semiconductors, 2000, v. 34, n. 8, p. 971, doi. 10.1134/1.1188110
- By:
- Publication type:
- Article
4
Lateral conductivity of p-type doped Si/Ge island structures.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 818, doi. 10.1134/S1063782607070081
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- Publication type:
- Article
5
Photoluminescence from Germanium Quantum Wells and Quantum Dots in Silicon Grown by MBE at Low Temperature.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 207, doi. 10.1134/1.1548666
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- Publication type:
- Article
6
Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate.
- Published in:
- Semiconductors, 2002, v. 36, n. 5, p. 535, doi. 10.1134/1.1478544
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- Publication type:
- Article
7
Use of magnetic field screening by high-temperature superconducting films to switch microwave signals.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 7, p. 533, doi. 10.1134/1.1262182
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- Publication type:
- Article