Found: 10
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Optimization of manufacturing of emitter-coupled logic to decrease surface of chip.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 5, p. -1, doi. 10.1142/S021797921550023X
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- Article
An approach to decrease dimensions of field-effect transistors without p-n-junctions.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2014, v. 28, n. 27, p. -1, doi. 10.1142/S0217979214501902
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- Article
Optimization of annealing of dopant to increase sharpness of p- n junctions in a heterostructure with drain of dopant.
- Published in:
- Applied Nanoscience, 2014, v. 4, n. 5, p. 537, doi. 10.1007/s13204-013-0228-7
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- Article
Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier.
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- Applied Nanoscience, 2013, v. 3, n. 4, p. 303, doi. 10.1007/s13204-012-0134-4
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- Article
Multivariate Analysis of Refusal Strategies in Request Situations: The Case of Russian JFL Learners.
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- Journal of Language Teaching & Research, 2016, v. 7, n. 5, p. 829, doi. 10.17507/jltr.0705.02
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- Article
About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors.
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- International Journal of Multiphysics, 2015, v. 9, n. 2, p. 109, doi. 10.1260/1750-9548.9.2.109
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- Article
Variation of redistribution of an infused dopant in a multilayer structure with variation of pressure of vapor of the dopant.
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- International Journal of Multiphysics, 2014, v. 8, n. 4, p. 411, doi. 10.1260/1750-9548.8.4.411
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- Article
On Approach to Increase Integration Rate of Double-Gate Heterotransistors.
- Published in:
- International Journal of Nanoscience, 2017, v. 16, n. 4, p. -1, doi. 10.1142/S0219581X16500393
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- Article
INCREASE OF SHARPNESS OF DIFFUSION-JUNCTION HETERORECTIFIER BY USING RADIATION PROCESSING.
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- International Journal of Nanoscience, 2012, v. 11, n. 5, p. -1, doi. 10.1142/S0219581X12500287
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- Article
Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress.
- Published in:
- Physics Research International, 2013, p. 1, doi. 10.1155/2013/645620
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- Article