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Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3.
Published in:
Semiconductors, 2023, v. 57, n. 10, p. 454, doi. 10.1134/S1063782623090087
By:
- Dementeva, E. V.;
- Dementev, P. A.;
- Korenko, N. P.;
- Shkarupa, I. I.;
- Kremleva, A. V.;
- Panov, D. Yu.;
- Spiridonov, V. A.;
- Zamoryanskaya, M. V.;
- Bauman, D. A.;
- Odnobludov, M. A.;
- Romanov, A. E.;
- Bugrov, V. E.
Publication type:
Article
Electron-hole Coulomb interaction in InGaN quantum dots.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1101, doi. 10.1134/1.1187576
By:
- Bugrov, V. E.;
- Konstantinov, O. V.
Publication type:
Article
Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system.
Published in:
Semiconductors, 1997, v. 31, n. 5, p. 523, doi. 10.1134/1.1187206
By:
- Zubrilov, A. S.;
- Mel’nik, Yu. V.;
- Tsvetkov, D. V.;
- Bugrov, V. E.;
- Nikolaev, A. E.;
- Stepanov, S. I.;
- Dmitriev, V. A.
Publication type:
Article
Waveguide properties of gallium, aluminum, and indium nitride heterostructures.
Published in:
Semiconductors, 1997, v. 31, n. 1, p. 51, doi. 10.1134/1.1187052
By:
- Bugrov, V. E.;
- Zubrilov, A. S.
Publication type:
Article
AUGER RECOMBINATION IN QUANTUM WELL LASER WITH PARTICIPATION OF ELECTRONS IN WAVEGUIDE REGION.
Published in:
Reviews on Advanced Materials Science, 2018, v. 57, n. 2, p. 193, doi. 10.1515/rams-2018-064
By:
- Karpova, A. A.;
- Samosvat, D. M.;
- Zegrya, A. G.;
- Zegrya, G. G.;
- Bugrov, V. E.
Publication type:
Article
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.
Published in:
Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819
By:
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Kulagina, M. M.;
- Vasyl'ev, A. P.;
- Blokhin, S. A.;
- Troshkov, S. I.;
- Nashchekin, A. V.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Voropaev, K. O.;
- Bugrov, V. E.;
- Ustinov, V. M.
Publication type:
Article
Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals.
Published in:
Technical Physics Letters, 2021, v. 47, n. 3, p. 218, doi. 10.1134/S1063785021030044
By:
- Bauman, D. A.;
- P'yankova, L. A.;
- Kremleva, A. V.;
- Spiridonov, V. A.;
- Panov, D. Yu.;
- Zakgeim, D. A.;
- Bakhvalov, A. S.;
- Odnoblyudov, M. A.;
- Romanov, A. E.;
- Bugrov, V. E.
Publication type:
Article
Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers.
Published in:
Technical Physics Letters, 2019, v. 45, n. 4, p. 398, doi. 10.1134/S1063785019040205
By:
- Babichev, A. V.;
- Gladyshev, A. G.;
- Kurochkin, A. S.;
- Dudelev, V. V.;
- Kolodeznyi, E. S.;
- Sokolovskii, G. S.;
- Bugrov, V. E.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Denisov, D. V.;
- Ionov, A. S.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article

Found: 8

Luminescence Features of Bulk Crystals β-(Ga<sub>x</sub>Al<sub>1–x</sub>)<sub>2</sub>O<sub>3</sub>.

Electron-hole Coulomb interaction in InGaN quantum dots.

Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system.

Waveguide properties of gallium, aluminum, and indium nitride heterostructures.

AUGER RECOMBINATION IN QUANTUM WELL LASER WITH PARTICIPATION OF ELECTRONS IN WAVEGUIDE REGION.

Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.

Elemental and Structural Mapping of Czochralski-Grown Bulk (Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>)<sub>2</sub>O<sub>3</sub> Crystals.

Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers.