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Highly reproducible and CMOS-compatible VO<sub>2</sub>-based oscillators for brain-inspired computing.
- Published in:
- Scientific Reports, 2024, v. 11, n. 1, p. 1, doi. 10.1038/s41598-024-61294-x
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- Article
Demonstration of transfer learning using 14nm technology analog ReRAM array.
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- Frontiers in Electronics, 2024, p. 1, doi. 10.3389/felec.2023.1331280
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- Article
Filamentary TaO<sub>x</sub>/HfO<sub>2</sub> ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200448
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- Article
Structural Assessment of Interfaces in Projected Phase-Change Memory.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 10, p. 1702, doi. 10.3390/nano12101702
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- Article
Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge‐Sb‐Te Alloys.
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- Advanced Materials Interfaces, 2022, v. 9, n. 9, p. 1, doi. 10.1002/admi.202101556
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- Article
State dependence and temporal evolution of resistance in projected phase change memory.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-64826-3
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- Article
Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.
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- Scientific Reports, 2016, p. 31679, doi. 10.1038/srep31679
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- Article
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.
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- Scientific Reports, 2016, p. 23843, doi. 10.1038/srep23843
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- Article
Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.
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- Scientific Reports, 2016, p. 22353, doi. 10.1038/srep22353
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- Article
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.
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- Scientific Reports, 2016, p. 20633, doi. 10.1038/srep20633
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- Article