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Blazed Silicon Gratings for Soft X-Ray and Extreme Ultraviolet Radiation: the Effect of Groove Profile Shape and Random Roughness on the Diffraction Efficiency.
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- Technical Physics, 2023, v. 68, p. S51, doi. 10.1134/S1063784223090062
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High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source.
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- Technical Physics Letters, 2021, v. 47, n. 10, p. 757, doi. 10.1134/S1063785021080071
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Development of the Design of Super-Multiperiod Structures Grown by Molecular-Beam Epitaxy and Emitting in the Terahertz Range.
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- Journal of Experimental & Theoretical Physics, 2021, v. 133, n. 2, p. 161, doi. 10.1134/S1063776121070037
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Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation.
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- Semiconductors, 2020, v. 54, n. 14, p. 1847, doi. 10.1134/S1063782620140183
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Deep X-Ray Reflectometry of Supermultiperiod A<sub>3</sub>B<sub>5</sub> Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.
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- Technical Physics, 2020, v. 65, n. 11, p. 1822, doi. 10.1134/S1063784220110134
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Engineering of the Second‐Harmonic Emission Directionality with III–V Semiconductor Rod Nanoantennas.
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- Laser & Photonics Reviews, 2020, v. 14, n. 9, p. 1, doi. 10.1002/lpor.202000028
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Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.
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- Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239
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Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.
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- Semiconductors, 2019, v. 53, n. 12, p. 1717, doi. 10.1134/S1063782619160176
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On the Specific Features of the Plasma-Assisted MBE Synthesis of n<sup>+</sup>-GaN Layers on GaN/c-Al<sub>2</sub>O<sub>3</sub> Templates.
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- Semiconductors, 2019, v. 53, n. 9, p. 1187, doi. 10.1134/S1063782619090112
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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.
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- Materials (1996-1944), 2019, v. 12, n. 3, p. 406, doi. 10.3390/ma12030406
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Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.
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- Semiconductors, 2018, v. 52, n. 16, p. 2117, doi. 10.1134/S1063782618160297
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Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327
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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175
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Solar Cell Based on Core/Shell Nanowires.
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- Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229
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Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
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The Features of GaAs Nanowire SEM Images.
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- Semiconductors, 2018, v. 52, n. 5, p. 605, doi. 10.1134/S1063782618050317
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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
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- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
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Ultrafast Dynamics of Photoinduced Electron-Hole Plasma in Semiconductor Nanowires.
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- Semiconductors, 2018, v. 52, n. 1, p. 19, doi. 10.1134/S1063782618010244
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Directional emission from beryllium doped GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 811, doi. 10.1134/S1063785017090085
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Thermal Penetration of Gold Nanoparticles into Silicon Dioxide.
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- Acta Physica Polonica: A, 2017, v. 132, n. 2, p. 366, doi. 10.12693/APhysPolA.132.366
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Resonant features of the terahertz generation in semiconductor nanowires.
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- Semiconductors, 2016, v. 50, n. 12, p. 1561, doi. 10.1134/S1063782616120241
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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
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- Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
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Polarization of the photoluminescence of quantum dots incorporated into quantum wires.
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- Semiconductors, 2016, v. 50, n. 12, p. 1647, doi. 10.1134/S1063782616120150
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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
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- Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
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Growth and properties of self-catalyzed (In,Mn)As nanowires.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 7, p. 554, doi. 10.1002/pssr.201600097
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Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals.
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- Technical Physics Letters, 2015, v. 41, n. 2, p. 120, doi. 10.1134/S1063785015020066
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Study of the electrical properties of individual (Ga,Mn)As nanowires.
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- Semiconductors, 2014, v. 48, n. 3, p. 344, doi. 10.1134/S1063782614030075
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Raman spectra and structural peculiarities of GaAs nanowires.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 1, p. 104, doi. 10.1134/S1027451014010297
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Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals.
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- Semiconductors, 2013, v. 47, n. 10, p. 1416, doi. 10.1134/S1063782613100266
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(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties.
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- Semiconductors, 2013, v. 47, n. 8, p. 1037, doi. 10.1134/S1063782613080058
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Photovoltaic properties of GaAs:Be nanowire arrays.
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- Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079
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Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100).
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- Technical Physics Letters, 2012, v. 38, n. 9, p. 816, doi. 10.1134/S1063785012090040
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Formation of (Ga,Mn)As nanowires and study of their magnetic properties.
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- Semiconductors, 2012, v. 46, n. 2, p. 179, doi. 10.1134/S1063782612020042
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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.
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- Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191
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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185
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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
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- Nanoscale Research Letters, 2010, v. 5, n. 2, p. 360, doi. 10.1007/s11671-009-9488-2
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Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates.
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- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 112, doi. 10.1002/pssr.200903057
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