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Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides.
Published in:
Technical Physics Letters, 2006, v. 32, n. 8, p. 712, doi. 10.1134/S1063785006080220
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Lyutetskiĭ, A. V.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Rozhkov, A. V.;
- Rudova, N. A.;
- Slipchenko, S. O.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Borshchev, K. S.;
- Tarasov, I. S.
Publication type:
Article
Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 737, doi. 10.1134/S1063782608060171
By:
- Vorob'ev, L. E.;
- Zerova, V. L.;
- Borshchev, K. S.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Belenky, G.
Publication type:
Article
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m).
Published in:
Semiconductors, 2008, v. 42, n. 1, p. 104, doi. 10.1007/s11453-008-1015-z
By:
- Lyutetskiĭ, A.;
- Borshchev, K.;
- Pikhtin, N.;
- Slipchenko, S.;
- Sokolova, Z.;
- Tarasov, I.
Publication type:
Article
Double-band generation in quantum-well semiconductor laser at high injection levels.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193
By:
- Vinokurov, D. A.;
- Zorina, S. A.;
- Kapitonov, V. A.;
- Leshko, A. Yu.;
- Lyutetskiǐ;, A. V.;
- Nalet, T. A.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Rudova, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Borshchev, K. S.;
- Arsent'ev, I. N.;
- Bondarev, A. D.;
- Trukan, M. K.;
- Tarasov, I. S.
Publication type:
Article
Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.
Published in:
Semiconductors, 2007, v. 41, n. 8, p. 984, doi. 10.1134/S1063782607080234
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Lyutetskiĭ, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Borshchev, K. S.;
- Arsent'ev, I. N.;
- Tarasov, I. S.
Publication type:
Article
1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 7, p. 860, doi. 10.1134/S1063782607070147
By:
- Lyutetskiĭ, A. V.;
- Borshchev, K. S.;
- Bondarev, A. D.;
- Nalet, T. A.;
- Pikhtin, N. A.;
- Slipchenko, S.;
- Fetisova, N.;
- Khomylev, M.;
- Marmalyuk, A.;
- Ryaboshtan, Yu.;
- Simakov, V.;
- Tarasov, I.
Publication type:
Article

Found: 6

Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides.

Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.

Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m).

Double-band generation in quantum-well semiconductor laser at high injection levels.

Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.

1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures.