Works by Boltovets, N. S.

Results: 38

Phase Interactions in TiN[sub x](TiB[sub x])–n-Si–n[sup +]-Si Contacts and Their Thermal Degradation Due to Rapid Thermal Annealing.

Published in:

Technical Physics, 2003, v. 48, n. 4, p. 441, doi. 10.1134/1.1568486

By:

Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Milenin, V. V.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Silicon diffused diodes with nearly ideal current–voltage characteristics.

Published in:

Technical Physics, 1998, v. 43, n. 10, p. 1257, doi. 10.1134/1.1259167

By:

Boltovets, N. S.;
Ismaılov, K. A.;
Konakova, R. V.;
Tagaev, M. B.

Publication type:

Article

Thermal Stability of Multilayer Contacts on Gallium Nitride.

Published in:

Technical Physics Letters, 2005, v. 31, n. 12, p. 1078, doi. 10.1134/1.2150904

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sveshnikov, Yu. N.

Publication type:

Article

Microwave Switches Based on 4H-SiC p–i–n Diodes.

Published in:

Technical Physics Letters, 2004, v. 30, n. 2, p. 123, doi. 10.1134/1.1666959

By:

Bludov, A. V.;
Boltovets, N. S.;
Vasilevskii, K. V.;
Zorenko, A. V.;
Zekentes, K.;
Krivutsa, V. A.;
Kritskaya, T. V.;
Lebedev, A. A.

Publication type:

Article

Peculiarities of the Formation and Thermal Stability of Barrier Contacts in High-Sensitivity Silicon Carbide Detector Diodes.

Published in:

Technical Physics Letters, 2003, v. 29, n. 1, p. 22, doi. 10.1134/1.1544337

By:

Boltovets, N. S.;
Zorenko, A. V.;
Ivanov, V. N.;
Vlaskina, S. I.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Litvin, P. M.;
Litvin, O. S.;
Milenin, V. V.;
Abdizhaliev, S. K.

Publication type:

Article

Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.

Published in:

Technical Physics Letters, 2002, v. 28, n. 9, p. 735

By:

Arsent’ev, I. N.;
Baıdakova, M. V.;
Bobyl’, A. V.;
Vavilova, L. S.;
Konnikov, S. G.;
Ulin, V. P.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Microwave-Stimulated Relaxation of Internal Strains in GaAs-Based Device Heterostructures.

Published in:

Technical Physics Letters, 2002, v. 28, n. 2, p. 154, doi. 10.1134/1.1458520

By:

Boltovets, N. S.;
Kamalov, A. B.;
Kolyadina, E. Yu.;
Konakova, R. V.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Matveeva, L. A.;
Milenin, V. V.;
Rengevych, O. E.

Publication type:

Article

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055

By:

Belyaev, A. E.;
Boltovets, N. S.;
Klad'ko, V. P.;
Safryuk-Romanenko, N. V.;
Lubchenko, A. I.;
Sheremet, V. N.;
Shynkarenko, V. V.;
Slepova, A. S.;
Pilipenko, V. A.;
Petlitskaya, T. V.;
Pilipchuk, A. S.;
Konakova, R. V.;
Sachenko, A. V.

Publication type:

Article

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad’ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Naumov, A. V.;
Panteleev, V. N.;
Sheremet, V. N.

Publication type:

Article

Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 745, doi. 10.1134/S1063782610060102

By:

Belyaev, A. E.;
Boltovets, N. S.;
Vitusevich, S. A.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lebedev, A. A.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Interphase interactions and the mechanism of current flow in Au-TiB x-AuGe- n-GaP ohmic contacts.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1428, doi. 10.1134/S1063782609110062

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kamalov, A. B.;
Kapitanchuk, L. M.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Nasyrov, M. U.;
Nevolin, P. V.

Publication type:

Article

Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1086, doi. 10.1134/S1063782609080223

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kladko, V. P.;
Kudryk, Ya. Ya.;
Lebedev, A. A.;
Milenin, V. V.;
Sheremet, V. N.

Publication type:

Article

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 872, doi. 10.1134/S1063782609070082

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Sheremet, V. N.;
Sveshnikov, Yu. N.

Publication type:

Article

Au-TiB x- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 865, doi. 10.1134/S1063782609070070

By:

Ageev, O. A.;
Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sachenko, A. V.

Publication type:

Article

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 726, doi. 10.1134/S1063782609060074

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Konakova, R. F.;
Kudryk, Ya. Ya.;
Milenin, V. V.

Publication type:

Article

Properties of barrier contacts with nanosize TiB x layers to InP.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051

By:

Arsentyev, I. N.;
Bobyl, A. V.;
Tarasov, I. S.;
Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Kamalov, A. B.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Russu, E. V.

Publication type:

Article

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Kuchuk, A. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz.

Published in:

Semiconductors, 2006, v. 40, n. 6, p. 734, doi. 10.1134/S1063782606060200

By:

Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Milenin, V. V.;
Arsent'ev, I. N.;
Bobyl, A. V.;
Brunkov, P. N.;
Tarasov, I. S.;
Tonkikh, A. A.;
Ulin, V. P.;
Ustinov, V. V.;
Cirlin, G. E.

Publication type:

Article

Method for data processing in application to ohmic contacts.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 11, doi. 10.15407/spqeo22.01.11

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Kovtonjuk, V. M.;
Kudryk, Ya. Ya.;
Shynkarenko, V. V.;
Dub, M. M.;
Saj, P. O.;
Novitskii, S. V.

Publication type:

Article

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n+-n-n+-Si in IMPATT diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366

By:

Romanets, P. M.;
Belyaev, A. E.;
Sachenko, A. V.;
Boltovets, N. S.;
Basanets, V. V.;
Konakova, R. V.;
Slipokurov, V. S.;
Khodin, A. A.;
Pilipenko, V. A.;
Shynkarenko, V. V.;
Kudryk, Ya. Ya.

Publication type:

Article

Ohmic contacts based on Pd to indium phosphide Gunn diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317

By:

Belyaev, A. E.;
Boltovets, N. S.;
Bobyl, A. V.;
Zorenko, A. V.;
Arsentiev, I. N.;
Kladko, V. P.;
Kovtonyuk, V. M.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Sachenko, A. V.;
Slipokurov, V. S.;
Slepova, A. S.;
Safryuk, N. V.;
Gudymenko, A. I.;
Shynkarenko, V. V.

Publication type:

Article

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Vinogradov, A. O.;
Pilipenko, V. A.;
Petlitskaya, T. V.;
Anischik, V. M.;
Konakova, R. V.;
Korostinskaya, T. V.;
Kostylyov, V. P.;
Kudryk, Ya. Ya.;
Lyapin, V. G.;
Romanets, P. N.;
Sheremet, V. N.

Publication type:

Article

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+ -GaN ohmic contacts.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Kapitanchuk, L. M.;
Klad'ko, V. P.;
Konakova, R. V.;
Kuchuk, A. V.;
Korostinskaya, T. V.;
Pilipchuk, A. S.;
Sheremet, V. N.;
Mazur, Yu. I.;
Ware, M. E.;
Salamo, G. J.

Publication type:

Article

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289

By:

Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Zhigunov, V. S.;
Konakova, R. V.;
Panteleev, V. N.;
Sachenko, A. V.;
Sheremet, V. N.

Publication type:

Article

Role of dislocations in formation of ohmic contacts to heavily doped n-Si.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 99

By:

Belyaev, A. E.;
Pilipenko, V. A.;
Anischik, V. M.;
Petlitskaya, T. V.;
Sachenko, A. V.;
Klad'ko, V. P.;
Konakova, R. V.;
Boltovets, N. S.;
Korostinskaya, T. V.;
Kapitanchuk, L. M.;
Kudryk, Ya. Ya.;
Vinogradov, A. O.;
Sheremet, V. N.

Publication type:

Article

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Kuchuk, A. V.;
Naumov, A. V.;
Panteleev, V. V.;
Sheremet, V. N.

Publication type:

Article

Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 13

By:

Bacherikov, Yu. Yu.;
Boltovets, N. S.;
Konakova, R. V.;
Kolyadina, E. Yu.;
Ledn'ova, T. M.;
Okhrimenko, O. B.

Publication type:

Article

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 465

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Sorokin, V. M.;
Sheremet, V. N.;
Shynkarenko, V. V.

Publication type:

Article

Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 436, doi. 10.15407/spqeo13.04.436

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Sachenko, A. V.;
Sheremet, V. N.

Publication type:

Article

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 209, doi. 10.15407/spqeo11.03.209

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Sheremet, V. N.

Publication type:

Article

Development of high-stable contact systems to gallium nitride microwave diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 1

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Kuchuk, A. V.;
Lytvyn, O. S.;
Milenin, V. V.;
Sheremet, V. N.;
Sveshnikov, Yu. N.

Publication type:

Article

On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 1, doi. 10.15407/spqeo10.03.001

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Kuchuk, A. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

A silicon carbide thermistor.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 67, doi. 10.15407/spqeo9.04.067

By:

Boltovets, N. S.;
Kholevchuk, V. V.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Mitin, V. F.;
Mitin, E. V.

Publication type:

Article

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 58, doi. 10.15407/spqeo9.02.058

By:

Boltovets, N. S.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Mitin, V. F.;
Mitin, E. V.;
Lytvyn, O. S.;
Kapitanchuk, L. M.

Publication type:

Article

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 105

By:

Arsentyev, I. N.;
Bobyl, A. V.;
Tarasov, I. S.;
Shishkov, M. V.;
Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Kamalov, A. B.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Lytvyn, P. M.;
Markovskiy, E. P.;
Milenin, V. V.

Publication type:

Article

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 65

By:

Belyaev, A. E.;
Bobyl, A. V.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Konnikov, S. G.;
Kudryk, Ya. Ya.;
Markovskiy, E. P.;
Milenin, V. V.;
Rudenko, E. M.;
Tereschenko, G. F.;
Ulin, V. P.;
Ustinov, V. M.;
Tsirlin, G. E.;
Shpak, A. P.

Publication type:

Article

SiC Schottky-barrier diodes formed with TiBX and ZrBX amorphous layers.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 60

By:

Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Lytvyn, O. S.;
Lytvyn, P. M.;
Vlaskina, S. I.;
Agueev, O. A.;
Svetlichny, A. M.;
Soloviev, S. I.;
Sudarshan, T. S.

Publication type:

Article

Works by Boltovets, N. S.

Phase Interactions in TiN[sub x](TiB[sub x])–n-Si–n[sup +]-Si Contacts and Their Thermal Degradation Due to Rapid Thermal Annealing.

Silicon diffused diodes with nearly ideal current–voltage characteristics.

Thermal Stability of Multilayer Contacts on Gallium Nitride.

Microwave Switches Based on 4H-SiC p–i–n Diodes.

Peculiarities of the Formation and Thermal Stability of Barrier Contacts in High-Sensitivity Silicon Carbide Detector Diodes.

Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.

Microwave-Stimulated Relaxation of Internal Strains in GaAs-Based Device Heterostructures.

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n<sup>+</sup>–n-Si Diffusion Silicon Structures.

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Effect of microwave treatment on current flow mechanisms in Au-TiB<sub>x</sub>-Al-Ti-n<sup>+</sup>-n-n<sup>+</sup>-GaN-Al<sub>2</sub>O<sub>3</sub> ohmic contacts.

Radiation damage of contact structures with diffusion barriers exposed to irradiation with <sup>60</sup>Coγ-ray photons.

Interphase interactions and the mechanism of current flow in Au-TiB<sub> x</sub>-AuGe- n-GaP ohmic contacts.

Properties of GaN(SiC)-(Ti, Zr)B<sub> x </sub> contacts subjected to rapid thermal annealing.

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

Au-TiB<sub> x</sub>- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB<sub>2</sub> films.

Properties of barrier contacts with nanosize TiB<sub> x </sub> layers to InP.

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Diffusion-barrier contacts based on the TiN and Ti(Zr)B<sub>x</sub> interstitial phases in the microwave diodes for the range of 75–350 GHz.

Method for data processing in application to ohmic contacts.

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n<sup>+</sup>-n-n<sup>+</sup>-Si in IMPATT diodes.

Ohmic contacts based on Pd to indium phosphide Gunn diodes.

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n<sup>+</sup> -GaN ohmic contacts.

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.

Role of dislocations in formation of ohmic contacts to heavily doped n-Si.

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.

Interface features of SiO<sub>2</sub>/SiC heterostructures according to methods for producing the SiO<sub>2</sub> thin films.

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes.

Temperature dependence of contact resistance of Au-Ti-Pd<sub>2</sub>Si-n<sup>+</sup>-Si ohmic contacts.

Heat-resistant barrier and ohmic contacts based on TiB<sub>x</sub> and ZrB<sub>x</sub> interstitial phases to microwave diode structures.

Development of high-stable contact systems to gallium nitride microwave diodes.

On the tunnel mechanism of current flow in Au-TiB<sub>x</sub>-n-GaN-i-Al<sub>2</sub>O<sub>3</sub> Schottky barrier diodes.

A silicon carbide thermistor.

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures.

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis.

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.

SiC Schottky-barrier diodes formed with TiB<sub>X</sub> and ZrB<sub>X</sub> amorphous layers.