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Mid- and Far-IR Focal Plane Arrays Based on Hg1 – xCdxTe Photodiodes.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1215, doi. 10.1134/1.2085273
By:
- Stafeev, V. I.;
- Boltar', K. O.;
- Burlakov, I. D.;
- Akimov, V. M.;
- Klimanov, E. A.;
- Saginov, L. D.;
- Solyakov, V. N.;
- Mansvetov, N. G.;
- Ponomarenko, V. P.;
- Timofeev, A. A.;
- Filachev, A. M.
Publication type:
Article
Multilayer Interference Coatings on the Basis of the Layers of Silicon and Dioxide of Silicon on the Thinning InSb FPA with Increased Mechanical Strength and Reproducibility.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1090, doi. 10.1134/S1064226923090164
By:
- Lopukhin, A. A.;
- Boltar, K. O.;
- Grishina, A. N.;
- Shishigin, S. E.
Publication type:
Article
Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1029, doi. 10.1134/S1064226923090048
By:
- Boltar, K. O.;
- Lopuhin, A. A.;
- Vlasov, P. V.;
- Iakovleva, N. I.
Publication type:
Article
Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 366, doi. 10.1134/S1064226923030166
By:
- Trukhachev, A. V.;
- Trukhacheva, N. S.;
- Sednev, M. V.;
- Boltar, K. O.
Publication type:
Article
Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 316, doi. 10.1134/S106422692303004X
By:
- Boltar, K. O.;
- Iakovleva, N. I.;
- Lopukhin, A. A.;
- Vlasov, P. V.
Publication type:
Article
Modern Photodetector IR-Modules.
Published in:
Journal of Communications Technology & Electronics, 2022, v. 67, n. 9, p. 1175, doi. 10.1134/S1064226922090030
By:
- Boltar, K. O.;
- Burlakov, I. D.;
- Iakovleva, N. I.;
- Vlasov, P. V.;
- Lazarev, P. S.
Publication type:
Article
Investigation of the Depth and Rate of Ion Etching of QWIP Structures.
Published in:
Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 358, doi. 10.1134/S1064226921030190
By:
- Trukhachev, A. V.;
- Sednev, M. V.;
- Trukhacheva, N. S.;
- Boltar, K. O.;
- Dirochka, A. I.
Publication type:
Article
Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer.
Published in:
Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 333, doi. 10.1134/S1064226921030037
By:
- Boltar, K. O.;
- Vlasov, P. V.;
- Lazarev, P. S.;
- Lopukhin, A. A.;
- Chishko, V. F.
Publication type:
Article
Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions.
Published in:
Journal of Communications Technology & Electronics, 2020, v. 65, n. 3, p. 347, doi. 10.1134/S1064226920030225
By:
- Yakovleva, N. I.;
- Boltar', K. O.;
- Irodova, N. A.;
- Klimanov, E. A.
Publication type:
Article
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1046, doi. 10.1134/S106422691909016X
By:
- Iakovleva, N. I.;
- Nikonov, A.V.;
- Boltar, K. O.;
- Sednev, M. V.
Publication type:
Article
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1016, doi. 10.1134/S1064226919090055
By:
- Burlakov, I. D.;
- Kuznetsov, P. A.;
- Moshchev, I. S.;
- Boltar, K. O.;
- Yakovleva, N. I.
Publication type:
Article
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 319, doi. 10.1134/S1064226919030070
By:
- Khamidullin, K. A.;
- Baliev, D. L.;
- Lazarev, P. S.;
- Boltar, K. O.;
- Polesskiy, A. V.;
- Burlakov, I. D.;
- Chepurnov, E. L.;
- Gusarova, N. I.;
- Popov, S. V.
Publication type:
Article
Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 283, doi. 10.1134/S1064226919030021
By:
- Boltar, K. O.;
- Irodov, N. A.;
- Sednev, M. V.;
- Marmalyuk, A. A.;
- Ladugin, M. A.;
- Ryaboshtan, Yu. L.
Publication type:
Article
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures.
Published in:
Journal of Communications Technology & Electronics, 2018, v. 63, n. 9, p. 1132, doi. 10.1134/S1064226918090267
By:
- Iakovleva, N. I.;
- Boltar, K. O.;
- Nikonov, A. V.;
- Egorov, A. V.
Publication type:
Article
Current-Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer.
Published in:
Journal of Communications Technology & Electronics, 2018, v. 63, n. 9, p. 1119, doi. 10.1134/S1064226918090188
By:
- Sednev, M. V.;
- Boltar, K. O.;
- Irodov, N. A.;
- Demidov, S. S.
Publication type:
Article
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements.
Published in:
Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 300, doi. 10.1134/S1064226918030026
By:
- Boltar, K. O.;
- Burlakov, I. D.;
- Vlasov, P. V.;
- Lopukhin, A. A.;
- Chaliy, V. P.;
- Katsavets, N. I.
Publication type:
Article

Found: 16

Mid- and Far-IR Focal Plane Arrays Based on Hg<sub>1 – </sub><sub>x</sub>Cd<sub>x</sub>Te Photodiodes.

Multilayer Interference Coatings on the Basis of the Layers of Silicon and Dioxide of Silicon on the Thinning InSb FPA with Increased Mechanical Strength and Reproducibility.

Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures.

Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays.

Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range.

Modern Photodetector IR-Modules.

Investigation of the Depth and Rate of Ion Etching of QWIP Structures.

Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer.

Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions.

Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs.

Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range.

Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures.

Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm.

Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures.

Current-Voltage Characteristics of n-B-p Structures with Absorbing In<sub>0.53</sub>Ga<sub>0.47</sub>As Layer.

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements.