Variation of the Electrophysical Properties of La[sub 0.67]Ca[sub 0.33]MnO[sub 3] Epilayers during Secondary Recrystallization.
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- Technical Physics, 2001, v. 46, n. 10, p. 1260, doi. 10.1134/1.1412060
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- Article
Works by Boikov, Yu. A.
Results: 23
1
2
Evaluation of Irreversibility and Optimal Design of an Integrated System of Multiflow Heat Exchange.
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- Theoretical Foundations of Chemical Engineering, 2019, v. 53, n. 6, p. 1001, doi. 10.1134/S0040579519060137
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- Article
3
Stratification of Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Single Crystals and Sintering of the Obtained Micro- and Nanoscale Plates.
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- Technical Physics, 2018, v. 63, n. 7, p. 1026, doi. 10.1134/S106378421807023X
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- Article
4
Magnetoresistance anisotropy in LaBaMnO films laterally compressed by a neodymium gallate substrate.
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- Technical Physics, 2014, v. 59, n. 7, p. 1027, doi. 10.1134/S106378421407007X
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- Article
5
Magnetoresistance of LaCaMnO films the coherent growth of which is disturbed by mechanical stress relaxation.
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- Technical Physics, 2011, v. 56, n. 5, p. 708, doi. 10.1134/S1063784211050070
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- Article
6
Effect of lateral tensile stresses on the low-temperature electrical resistivity and magnetoresistance of La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> nanofilms.
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- Technical Physics, 2010, v. 55, n. 8, p. 1183, doi. 10.1134/S1063784210080177
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- Article
7
Electrophysical parameters of c-oriented Bi<sub>2</sub>Te<sub>3</sub> films with a low concentration of antistructural defects.
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- Technical Physics, 2008, v. 53, n. 3, p. 348, doi. 10.1134/S1063784208030109
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- Article
8
Reactance of the n-Au/ p-La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> film contact.
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- Technical Physics, 2006, v. 51, n. 8, p. 1097, doi. 10.1134/S1063784206080226
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- Article
9
Capacitance of the La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>/(Ba,Sr)TiO<sub>3</sub> Interface Induced by Electric Field Penetration into the Manganite Electrode.
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- Technical Physics, 2005, v. 50, n. 7, p. 891, doi. 10.1134/1.1994970
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- Article
10
Irreversibility of Heat-Transfer Processes in Double-Flow Cells of Varying Flow Hydrodynamics.
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- Journal of Engineering Physics & Thermophysics, 2020, v. 93, n. 1, p. 28, doi. 10.1007/s10891-020-02087-7
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- Article
11
Low-temperature magnetoresistance of biaxially strained 24-nm-thick La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> films.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 532, doi. 10.1134/S1063785009060157
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- Article
12
Electric resistance and magnetoresistance of 30-nm-Thick La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> films elastically compressed in the (110) plane.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 974, doi. 10.1134/S1063785008110229
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- Article
13
Magnetotransport characteristics of biaxially strained 25-nm-thick La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> films.
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- Technical Physics Letters, 2008, v. 34, n. 1, p. 40, doi. 10.1134/S1063785008010124
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- Article
14
Capacitance of (001)SrRuO<sub>3</sub>/(001)SrTiO<sub>3</sub> and (110)SrRuO<sub>3</sub>/(110)SrTiO<sub>3</sub> interfaces in epitaxial heterostructures grown on LaAlO<sub>3</sub> substrates.
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- Technical Physics Letters, 2006, v. 32, n. 4, p. 320, doi. 10.1134/S1063785006040146
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- Article
15
Electric Resistance and Magnetoresistance of a Two-Layer Epitaxial Heterostructure (30 nm)La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> /(30 nm)La<sub>0.67</sub>Ba<sub>0.33</sub>MnO<sub>3</sub>.
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- Technical Physics Letters, 2005, v. 31, n. 12, p. 1032, doi. 10.1134/1.2150890
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- Article
16
Magnetoresistance of La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> Films Grown on Substrates with Orthorhombically Distorted Unit Cells.
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- Technical Physics Letters, 2005, v. 31, n. 7, p. 605, doi. 10.1134/1.2001068
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- Article
17
Response of the Electric Resistance of 40-nm-Thick La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> Films to an Increase in the Lattice Mismatch between Film and Substrate.
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- Technical Physics Letters, 2005, v. 31, n. 1, p. 36, doi. 10.1134/1.1859494
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- Article
18
Electric Resistance of La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> Films Biaxially Strained during Growth on Lattice-Mismatched Substrates.
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- Technical Physics Letters, 2004, v. 30, n. 7, p. 535, doi. 10.1134/1.1783393
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- Article
19
Interfacial Capacitance in Epitaxial Heterostructures La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3 </sub>/SrTiO<sub>3 </sub>/La<sub>0.67</sub>Ca<sub>0.33</sub>MnO.
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- Technical Physics Letters, 2004, v. 30, n. 5, p. 361, doi. 10.1134/1.1760855
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- Article
20
Slow Dielectric Relaxation in SrRuO 3 /Ba 0.8 Sr 0.2 TiO 3 /SrRuO 3 Ferroelectric Thin Film Capacitor Structures.
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- Ferroelectrics, 2003, v. 286, n. 1, p. 251, doi. 10.1080/00150190390206437
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- Article
21
Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields.
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- Semiconductors, 2017, v. 51, n. 7, p. 843, doi. 10.1134/S1063782617070259
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- Article
22
On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and BiSbTe solid solution.
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- Semiconductors, 2017, v. 51, n. 6, p. 692, doi. 10.1134/S1063782617060203
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- Article
23
Parameters of the Constant-Energy Surface and Features of Charge Carrier Scattering of BiTe-Based Epitaxial Films.
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- Journal of Electronic Materials, 2013, v. 42, n. 7, p. 1796, doi. 10.1007/s11664-012-2432-8
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- Article