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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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- Article
The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN.
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- Solids (2673-6497), 2024, v. 5, n. 1, p. 29, doi. 10.3390/solids5010003
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- Article
Origins of Electrical Compensation in Si‐Doped HVPE GaN.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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- Article
Origins of Electrical Compensation in Si‐Doped HVPE GaN.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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- Article
Origins of Electrical Compensation in Si‐Doped HVPE GaN.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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- Article
Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 7, p. 1, doi. 10.1002/pssr.202300035
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- Article
Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN.
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- Materials (1996-1944), 2023, v. 16, n. 9, p. 3360, doi. 10.3390/ma16093360
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- Article
Novel High-Pressure Nanocomposites for Cathode Materials in Sodium Batteries.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 1, p. 164, doi. 10.3390/nano13010164
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- Article
Negative Magnetoresistivity in Highly Doped n-Type GaN.
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- Materials (1996-1944), 2022, v. 15, n. 20, p. 7069, doi. 10.3390/ma15207069
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- Article
Comparison of Cattle Housing Systems Based on the Criterion of Damage to Barn Equipment and Construction Errors.
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- Animals (2076-2615), 2022, v. 12, n. 19, p. 2530, doi. 10.3390/ani12192530
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- Article
Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6996, doi. 10.3390/ma15196996
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- Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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- Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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- Article
Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed.
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- Materials (1996-1944), 2022, v. 15, n. 13, p. 4621, doi. 10.3390/ma15134621
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- Article
On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals.
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- Crystals (2073-4352), 2022, v. 12, n. 4, p. 554, doi. 10.3390/cryst12040554
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- Article
Carbon and Manganese in Semi-Insulating Bulk GaN Crystals.
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- Materials (1996-1944), 2022, v. 15, n. 7, p. 2379, doi. 10.3390/ma15072379
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- Article
Vibrational disorder and densification-induced homogenization of local elasticity in silicate glasses.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-04045-6
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- Article
Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography.
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- Materials (1996-1944), 2021, v. 14, n. 19, p. 5472, doi. 10.3390/ma14195472
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- Article
Indentation Response of Calcium Aluminoborosilicate Glasses Subjected to Humid Aging and Hot Compression.
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- Materials (1996-1944), 2021, v. 14, n. 13, p. 3450, doi. 10.3390/ma14133450
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- Article
Structural densification of lithium phosphoaluminoborate glasses.
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- Journal of the American Ceramic Society, 2021, v. 104, n. 3, p. 1345, doi. 10.1111/jace.17559
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- Article
Volume relaxation in a borosilicate glass hot compressed by three different methods.
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- Journal of the American Ceramic Society, 2021, v. 104, n. 2, p. 816, doi. 10.1111/jace.17482
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- Article
Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 24, p. 1, doi. 10.1002/pssa.202000465
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- Article
Atomic structure of hot compressed borosilicate glasses.
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- Journal of the American Ceramic Society, 2020, v. 103, n. 11, p. 6215, doi. 10.1111/jace.17377
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- Article
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74362-9
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- Article
GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices.
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- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1342, doi. 10.3390/electronics9091342
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- Article
High Pressure Processing of Ion Implanted GaN.
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- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1380, doi. 10.3390/electronics9091380
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- Article
A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900593
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- Article
Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900705
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- Article
Multifold pressure-induced increase of electric conductivity in LiFe<sub>0.75</sub>V<sub>0.10</sub>PO<sub>4</sub> glass.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-53232-z
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- Article
Revisiting the Dependence of Poisson's Ratio on Liquid Fragility and Atomic Packing Density in Oxide Glasses.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2439, doi. 10.3390/ma12152439
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- Article
Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results.
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- Materials (1996-1944), 2018, v. 11, n. 10, p. 1800, doi. 10.3390/ma11101800
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- Article
Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification.
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- Physica Status Solidi (B), 2018, v. 255, n. 10, p. N.PAG, doi. 10.1002/pssb.201800126
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- Article
Foam glass obtained through high‐pressure sintering.
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- Journal of the American Ceramic Society, 2018, v. 101, n. 9, p. 3917, doi. 10.1111/jace.15574
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- Article
First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N<sub>2</sub> Pressure.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700897
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- Article
Accessing Forbidden Glass Regimes through High-Pressure Sub-T<sub>g</sub> Annealing.
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- Scientific Reports, 2017, p. 46631, doi. 10.1038/srep46631
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- Article
Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1172, doi. 10.1002/pssb.201451604
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- Article
Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
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- Scientific Reports, 2015, p. 9703, doi. 10.1038/srep09703
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- Article
Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy.
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- Crystal Research & Technology, 1997, v. 32, n. 2, p. 229, doi. 10.1002/crat.2170320204
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- Article