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Studying LiFePO<sub>4</sub> Powder Samples Via X-ray Diffraction Techniques Using Artificial Neural Networks.
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- Technical Physics Letters, 2023, v. 49, n. 12, p. 228, doi. 10.1134/S1063785023900108
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- Article
The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties.
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- Technical Physics, 2020, v. 65, n. 7, p. 1123, doi. 10.1134/S1063784220070191
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- Article
Strength of Silicon Single-Crystal Wafers for Solar Cells.
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- Technical Physics, 2020, v. 65, n. 1, p. 73, doi. 10.1134/S1063784220010259
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New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters.
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- Semiconductors, 2018, v. 52, n. 13, p. 1782, doi. 10.1134/S1063782618130134
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- Article
The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 873, doi. 10.1134/S1063785018100139
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- Article
RAILWAY TRANSPORT RISK MANAGEMENT AND INSURANCE.
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- Financial & Credit Activity: Problems of Theory & Practice, 2018, v. 2, n. 25, p. 128, doi. 10.18371/fcaptp.v2i25.136479
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- Article
DEFINITION OF PRINCIPLES OF TOURIST TRAFFIC ORGANIZATION ON NARROW-GAUGE RAILWAYS.
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- Technology Audit & Production Reserves, 2017, v. 2, n. 5(34), p. 22, doi. 10.15587/2312-8372.2017.98335
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- Article
Ohmic contacts based on Pd to indium phosphide Gunn diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317
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- Article
Simulation of daytime variations in the characteristics of <i>a</i>-Si:H solar cells.
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- Technical Physics, 2013, v. 58, n. 11, p. 1625, doi. 10.1134/S106378421311011X
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Annual dependences of generated power and electrical energy for <i>a</i>-Si:H-based solar cells.
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- Technical Physics, 2013, v. 58, n. 11, p. 1632, doi. 10.1134/S1063784213110121
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- Article
Analysis of light-induced degradation mechanisms in α-Si:H/μ<i>c</i>-Si:H solar photovoltaics.
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- Semiconductors, 2013, v. 47, n. 9, p. 1252, doi. 10.1134/S1063782613090066
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- Article
Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells.
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- Semiconductors, 2010, v. 44, n. 9, p. 1244, doi. 10.1134/S1063782610090241
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- Article
Properties of barrier contacts with nanosize TiB<sub> x </sub> layers to InP.
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- Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051
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- Article
Nonlinear microwave properties of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7− x </sub> block epitaxial films near the superconducting transition temperature.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 246, doi. 10.1134/S1063776107070540
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Noise and structural characteristics of high- T <sub>c</sub> superconductor films and the numerical simulation of bolometers based on such films.
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- Technical Physics Letters, 2007, v. 33, n. 7, p. 548, doi. 10.1134/S1063785007070036
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Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.
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- Semiconductors, 2007, v. 41, n. 5, p. 502, doi. 10.1134/S106378260705003X
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- Article
Magnetic field visualization of magnetic minerals and grain boundary regions using magneto-optical imaging.
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- Journal of Geophysical Research. Solid Earth, 2007, v. 112, n. B4, p. n/a, doi. 10.1029/2006JB004305
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- Article
An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures.
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- Semiconductors, 2006, v. 40, n. 6, p. 687, doi. 10.1134/S1063782606060145
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- Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)B<sub>x</sub> interstitial phases in the microwave diodes for the range of 75–350 GHz.
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- Semiconductors, 2006, v. 40, n. 6, p. 734, doi. 10.1134/S1063782606060200
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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 65
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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 105
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- Article
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.
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- Semiconductors, 2005, v. 39, n. 5, p. 523, doi. 10.1134/1.1923558
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Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.
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- Technical Physics Letters, 2002, v. 28, n. 9, p. 735
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The Propagation of Magnetostatic Surface Waves in Ferrite/Superconductor Structures.
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- Technical Physics, 2001, v. 46, n. 10, p. 1218, doi. 10.1134/1.1412054
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- Article
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.
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- Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417
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- Article
Sources of Flicker Noise and the Technology of Superconducting Microstripes Based on Yttrium Barium Cuprate Films.
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- Technical Physics, 2000, v. 45, n. 4, p. 443, doi. 10.1134/1.1259652
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Investigation of transient processes in YBaCuO films by low-temperature scanning electron microscopy.
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- Technical Physics Letters, 1997, v. 23, n. 11, p. 877
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Structural and noise characterization of VO[sub 2] films on SiO[sub 2]/Si substrates.
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- Technical Physics Letters, 1997, v. 23, n. 7, p. 520, doi. 10.1134/1.1261815
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Atomic distribution function of macroscopically isotropic objects in diffraction analyses.
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- Technical Physics Letters, 1997, v. 23, n. 3, p. 178, doi. 10.1134/1.1261872
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- Article