8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band.
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- Electronics (2079-9292), 2025, v. 14, n. 12, p. 2398, doi. 10.3390/electronics14122398
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Works matching AU Bin, Soohyun
Results: 3
1
2
Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter.
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- Electronics (2079-9292), 2025, v. 14, n. 11, p. 2300, doi. 10.3390/electronics14112300
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- Article
3
23.5–27.5 GHz Band Doherty Power Amplifier Integrated Circuit Using 28 nm Bulk CMOS Process Based on Dynamic Power Dividing Network.
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- Electronics (2079-9292), 2024, v. 13, n. 21, p. 4190, doi. 10.3390/electronics13214190
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- Article