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Long Life Power Factor Corrected LED Driver with Capacitive Energy Mechanism for Street Light Applications.
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- Sustainability (2071-1050), 2023, v. 15, n. 5, p. 3991, doi. 10.3390/su15053991
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- Article
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Long‐Term Electronic Synapses for Neuromorphic Computing.
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- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213296
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- Article
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.
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- Sensors (14248220), 2020, v. 20, n. 14, p. 3946, doi. 10.3390/s20143946
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- Article
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.
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- Sensors (14248220), 2020, v. 20, n. 10, p. 2751, doi. 10.3390/s20102751
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- Article
Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors.
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- Advanced Materials, 2024, v. 36, n. 25, p. 1, doi. 10.1002/adma.202400089
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- Article
TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory.
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- Micromachines, 2023, v. 14, n. 12, p. 2207, doi. 10.3390/mi14122207
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- Article
Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K.
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- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1427, doi. 10.3390/electronics13081427
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- Article
Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure.
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- Electronics (2079-9292), 2021, v. 10, n. 13, p. 1585, doi. 10.3390/electronics10131585
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- Article
Modulating p-type doping of two dimensional material palladium diselenide.
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- Nano Research, 2024, v. 17, n. 4, p. 3232, doi. 10.1007/s12274-023-6196-7
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- Article
Deep Ultraviolet Phototransistor Based on Thiophene‐Fluorobenzene Oligomer with High Mobility and Performance<sup>†</sup>.
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- Chinese Journal of Chemistry, 2023, v. 41, n. 13, p. 1539, doi. 10.1002/cjoc.202200795
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- Article
Back cover image.
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- InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12622
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- Article
Long‐term and short‐term plasticity independently mimicked in highly reliable Ru‐doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> electronic synapses.
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- InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12543
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- Article
Boosting flexible electronics with integration of two‐dimensional materials.
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- InfoMat, 2024, v. 6, n. 7, p. 1, doi. 10.1002/inf2.12555
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- Article
Cover Image.
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- InfoMat, 2024, v. 6, n. 7, p. 1, doi. 10.1002/inf2.12445
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- Article
Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction.
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- Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 6, p. 1, doi. 10.1007/s00339-020-03622-2
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- Article
Improved Ferroelectricity and Endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology.
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- Advanced Materials Interfaces, 2022, v. 9, n. 24, p. 1, doi. 10.1002/admi.202102351
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- Article
Effects of Charge Trapping on Memory Characteristics for HfO 2 -Based Ferroelectric Field Effect Transistors.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 638, doi. 10.3390/nano13040638
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- Article
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 23, p. 4344, doi. 10.3390/nano12234344
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- Article
Improved Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Thin Films by Microwave Annealing.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 3001, doi. 10.3390/nano12173001
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- Article
Suppressing the Intrinsic Photoelectric Response of Organic Semiconductors for Highly‐Photostable Organic Transistors.
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- Small, 2023, v. 19, n. 50, p. 1, doi. 10.1002/smll.202304634
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- Article