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Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions.
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- Technical Physics Letters, 2023, v. 49, n. 12, p. 253, doi. 10.1134/S1063785023900170
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- Article
Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
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- Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
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- Article
Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume.
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- Semiconductors, 2023, v. 57, n. 6, p. 300, doi. 10.1134/S1063782623080067
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Characterization of Nanosized Clusters and Transition Layers of Contacting γ- and γ'-Phases in a Ni-Based Superalloy.
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- Physics of Metals & Metallography, 2023, v. 124, n. 4, p. 380, doi. 10.1134/S0031918X23600215
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- Article
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers.
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- Semiconductors, 2022, v. 56, n. 6, p. 352, doi. 10.1134/S1063782622070077
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The Effect of Liquid Silicon on the AlN Crystal Growth.
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- Semiconductors, 2022, v. 56, n. 5, p. 281, doi. 10.1134/S1063782622050025
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Distribution of Alloying Element Atoms between γ- and γ'-Phase Particles in a Heat-Resistant Nickel Alloy.
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- Physics of Metals & Metallography, 2022, v. 123, n. 2, p. 163, doi. 10.1134/S0031918X22020028
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- Article
Origin of Green Coloration in AlN Crystals Grown on SiC Seeds.
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- Semiconductors, 2021, v. 55, n. 6, p. 546, doi. 10.1134/S1063782621060099
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Study of load-bearing timber-wall elements using experimental testing and mathematical modelling.
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- Advances in Production Engineering & Management, 2021, v. 16, n. 1, p. 67, doi. 10.14743/apem2021.1.385
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- Article
Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD.
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- Technical Physics Letters, 2020, v. 46, n. 10, p. 961, doi. 10.1134/S1063785020100053
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- Article
Quantification of Hydrogen in Natural Diamond by Secondary Ion Mass Spectrometry (SIMS).
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- Doklady Earth Sciences, 2020, v. 494, n. 1, p. 699, doi. 10.1134/S1028334X20090093
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- Article
Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation.
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- Semiconductors, 2020, v. 54, n. 3, p. 355, doi. 10.1134/S1063782620030112
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- Article
Atom Probe Tomography of the VV751P Nickel-Based Superalloy.
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- Physics of Metals & Metallography, 2020, v. 121, n. 1, p. 53, doi. 10.1134/S0031918X20010123
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- Article
Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range.
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- Technical Physics Letters, 2019, v. 45, n. 12, p. 1226, doi. 10.1134/S1063785019120289
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- Article
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy.
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- Semiconductors, 2019, v. 53, n. 11, p. 1472, doi. 10.1134/S106378261911006X
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- Article
Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates.
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- Technical Physics Letters, 2019, v. 45, n. 10, p. 1031, doi. 10.1134/S1063785019100213
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- Article
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 761, doi. 10.1134/S1063785019080108
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- Article
Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 780, doi. 10.1134/S1063785019080054
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- Article
A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1127, doi. 10.1134/S1063785018120593
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Nanostructure Growth in the Ga(In)AsP-GaAs System under Quasi-Equilibrium Conditions.
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- Semiconductors, 2018, v. 52, n. 10, p. 1363, doi. 10.1134/S1063782618100068
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- Article
The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 574, doi. 10.1134/S1063785018070131
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- Article
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlGaN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136
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Mobility of the Two-Dimensional Electron Gas in DA- pHEMT Heterostructures with Various δ- n-Layer Profile Widths.
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- Semiconductors, 2018, v. 52, n. 1, p. 44, doi. 10.1134/S1063782618010189
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A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE.
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- Technical Physics Letters, 2017, v. 43, n. 10, p. 905, doi. 10.1134/S1063785017100121
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- Article
Effects of irradiation with 8-MeV protons on n-3 C-SiC heteroepitaxial layers.
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- Semiconductors, 2017, v. 51, n. 8, p. 1044, doi. 10.1134/S1063782617080218
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Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters.
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- Semiconductors, 2017, v. 51, n. 5, p. 667, doi. 10.1134/S1063782617050116
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Electrochemical lithiation of silicon with varied crystallographic orientation.
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- Semiconductors, 2016, v. 50, n. 7, p. 963, doi. 10.1134/S1063782616070022
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Solar-blind AlGaN ( x > 0.45) p- i- n photodiodes with a polarization- p-doped emitter.
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- Technical Physics Letters, 2016, v. 42, n. 6, p. 635, doi. 10.1134/S1063785016060250
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Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 539, doi. 10.1134/S106378501605028X
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Experimental study of cyclic action of plasma on tungsten.
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- Technical Physics, 2016, v. 61, n. 3, p. 370, doi. 10.1134/S1063784216030269
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On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4 H-SiC.
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- Technical Physics Letters, 2015, v. 41, n. 12, p. 1143, doi. 10.1134/S1063785015120093
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Decrease in the binding energy of donors in heavily doped GaN:Si layers.
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- Semiconductors, 2014, v. 48, n. 9, p. 1134, doi. 10.1134/S1063782614090176
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Photoresponse of a silicon multipixel photon counter in the vacuum ultraviolet range.
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- Technical Physics Letters, 2014, v. 40, n. 4, p. 330, doi. 10.1134/S1063785014040270
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Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel.
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- Semiconductors, 2014, v. 48, n. 1, p. 30, doi. 10.1134/S1063782614010126
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Photoresponse recovery in silicon photodiodes upon VUV irradiation.
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- Semiconductors, 2013, v. 47, n. 2, p. 213, doi. 10.1134/S1063782613020243
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High-efficiency GaSb photocells.
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- Semiconductors, 2013, v. 47, n. 2, p. 307, doi. 10.1134/S1063782613020139
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A study of vacuum-ultraviolet stability of silicon photodiodes.
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- Technical Physics Letters, 2012, v. 38, n. 9, p. 812, doi. 10.1134/S1063785012090143
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Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures.
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- Semiconductors, 2011, v. 45, n. 6, p. 753, doi. 10.1134/S1063782611060121
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Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds.
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- Semiconductors, 2011, v. 45, n. 6, p. 811, doi. 10.1134/S1063782611060078
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- Article
Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current.
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- Semiconductors, 2011, v. 45, n. 3, p. 415, doi. 10.1134/S1063782611030079
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Mass transfer in thermo-electric-field modification of glass-metal nanocomposites.
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- Technical Physics, 2010, v. 55, n. 11, p. 1600, doi. 10.1134/S1063784210110095
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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.
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- Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161
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Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.
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- Semiconductors, 2009, v. 43, n. 7, p. 963, doi. 10.1134/S1063782609070276
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Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing.
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- Semiconductors, 2007, v. 41, n. 3, p. 285, doi. 10.1134/S1063782607030086
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Specific features of transmutational doping of <sup>30</sup>Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.
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- Semiconductors, 2006, v. 40, n. 8, p. 901, doi. 10.1134/S1063782606080082
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Neutron transmutation doping of silicon <sup>30</sup>Si monoisotope with phosphorus.
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- Technical Physics Letters, 2006, v. 32, n. 6, p. 550, doi. 10.1134/S1063785006060307
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SIMS Profiling of GaAs/δ-AlAs/GaAs/... Heterostructures Using Polyatomic Ionized Oxygen Clusters.
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- Technical Physics Letters, 2004, v. 30, n. 10, p. 836, doi. 10.1134/1.1813725
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Determination of Nitrogen in Silicon Carbide by Secondary Ion Mass Spectrometry.
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- Journal of Analytical Chemistry, 2004, v. 59, n. 3, p. 250, doi. 10.1023/B:JANC.0000018968.09670.88
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Erbium and Germanium Profiles in Si<sub>1 – x</sub>Ge<sub>x</sub> Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH<sub>4</sub>.
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- Inorganic Materials, 2003, v. 39, n. 1, p. 3, doi. 10.1023/A:1021822715712
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Isotope-Pure [sup 28]Si Layers Grown by VPE.
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- Semiconductors, 2002, v. 36, n. 12, p. 1398, doi. 10.1134/1.1529252
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