PHOTOINDUCED 2D PLASMON MODES IN Cs NANOCLUSTERS ON THE GaAs(100)Ga-RICH SURFACE.
- Published in:
- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 191, doi. 10.1142/S0219581X07004560
- By:
- Publication type:
- Article
Works by Benemanskaya, G.
Results: 22
1
2
Electronic Structure of Ultrathin Cs/Bi<sub>2</sub>Se<sub>3</sub> Interfaces.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S303, doi. 10.1134/S1063785023010108
- By:
- Publication type:
- Article
3
A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface.
- Published in:
- Technical Physics Letters, 2019, v. 45, n. 3, p. 201, doi. 10.1134/S1063785019030039
- By:
- Publication type:
- Article
4
The Electronic Structure of the Cs/<italic>n</italic>-GaN(0001) Nano-Interface.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 3, p. 247, doi. 10.1134/S106378501803015X
- By:
- Publication type:
- Article
5
Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region.
- Published in:
- Surface Review & Letters, 1998, v. 5, n. 1, p. 91, doi. 10.1142/S0218625X98000190
- By:
- Publication type:
- Article
6
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.
- Published in:
- Semiconductors, 2023, v. 57, n. 11, p. 508, doi. 10.1134/S106378262308016X
- By:
- Publication type:
- Article
7
Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface.
- Published in:
- Semiconductors, 2023, v. 57, n. 10, p. 451, doi. 10.1134/S1063782623090051
- By:
- Publication type:
- Article
8
The C 1 s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1327, doi. 10.1134/S1063782616100080
- By:
- Publication type:
- Article
9
Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.
- Published in:
- Semiconductors, 2016, v. 50, n. 4, p. 457, doi. 10.1134/S1063782616040072
- By:
- Publication type:
- Article
10
Charge accumulation layers and surface states in ultrathin Cs,Ba/ n-GaN(0001) interfaces.
- Published in:
- Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 3, p. 441, doi. 10.1134/S1063776106090147
- By:
- Publication type:
- Article
11
The Electronic Properties of the Cs/GaAs(100) Interface and the Formation of Metastable Cs Clusters.
- Published in:
- Journal of Experimental & Theoretical Physics, 2001, v. 92, n. 2, p. 297, doi. 10.1134/1.1354687
- By:
- Publication type:
- Article
12
Electronic structure and local interactions on a Si(100)2×1 surface with submonolayer Ba overlayers.
- Published in:
- Journal of Experimental & Theoretical Physics, 1998, v. 87, n. 6, p. 1167, doi. 10.1134/1.558608
- By:
- Publication type:
- Article
13
Photoemission from InAs/GaAs quantum dots decorated with cesium adatoms.
- Published in:
- JETP Letters, 2012, v. 96, n. 5, p. 332, doi. 10.1134/S0021364012170031
- By:
- Publication type:
- Article
14
Electronic structure of a Ba/ n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas.
- Published in:
- JETP Letters, 2010, v. 91, n. 12, p. 670, doi. 10.1134/S0021364010120118
- By:
- Publication type:
- Article
15
Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption.
- Published in:
- JETP Letters, 2008, v. 87, n. 2, p. 111, doi. 10.1134/S0021364008020100
- By:
- Publication type:
- Article
16
Charge Accumulation Layer on the n-GaN (0001) Surface with Ultrathin Ba Coatings.
- Published in:
- JETP Letters, 2005, v. 81, n. 10, p. 519, doi. 10.1134/1.1996761
- By:
- Publication type:
- Article
17
Oscillations in the Threshold Photoemission Spectra of GaN(0001) with Submonolayer Cs Coverages.
- Published in:
- JETP Letters, 2003, v. 77, n. 5, p. 226
- By:
- Publication type:
- Article
18
Excitation of 2D Plasmons in a Cs/W(110) System.
- Published in:
- JETP Letters, 2001, v. 74, n. 2, p. 84, doi. 10.1134/1.1405890
- By:
- Publication type:
- Article
19
Destruction and appearance of surface metallization in the system K/Si(111)7×7.
- Published in:
- JETP Letters, 1997, v. 66, n. 1, p. 26, doi. 10.1134/1.567566
- By:
- Publication type:
- Article
20
Electronic structure of ultrathin Cs coatings on a Si(100)2×1 surface.
- Published in:
- JETP Letters, 1997, v. 65, n. 9, p. 729, doi. 10.1134/1.567417
- By:
- Publication type:
- Article
21
Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/ n-GaN and Ba/ n-AlGaN interfaces.
- Published in:
- Journal of Experimental & Theoretical Physics, 2014, v. 118, n. 4, p. 600, doi. 10.1134/S1063776114040098
- By:
- Publication type:
- Article
22
Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 12, p. 1145, doi. 10.1134/S1063785016120026
- By:
- Publication type:
- Article